US3943570A
Expired / Lapsed
US
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Semiconductor magnetic head
Assignee: Hitachi Ltd
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Filing: 1974-09-13
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Granted: 1976-03-09
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Expires: 1994-09-13
Abstract
Abstract A semiconductor magnetic head in which a polycrystal thin film of a semiconductor material containing at least a crystal particle having a longitudinal diameter of at least 30 mu m is employed as a magneto-sensitive element is disclosed. The semiconductor thin film containing the crystal particle of the longitudinal diameter at least 30 mu m can be easily formed with a good reproducibility by evaporating the semiconductor material on an insulation film containing not less than 3 mol % of alumina and then being subjected to a zone melting treatment.
Inventors
- 👤 Naoki Yamamoto
- 👤 Kikuji Sato
- 👤 Tetsu Oi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:18
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3993; G11B5/37; G11B5/376; H; H01; H01F; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/187
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
100 words
In a semiconductor magnetic head comprising a first substrate of a magnetic material having a high permeability, a magneto-sensitive element composed of a semiconductor film provided on said first substrate through a first insulation film interposed therebetween, lead wires connected to said magneto-sensitive element and a second substrate of a magnetic material having a high permeability formed so as to cover said magneto-sensitive element through a second interposed insulation film, the improvement residing in that said magneto-sensitive element is composed of a polycristalline thin film containing at least a crystal particle having a longitudinal diameter of at least 30 μm.
Claim 2
Dependent Claim
100 words
In a semiconductor magnetic head comprising a first substrate of a magnetic material having a high permeability, a magneto-sensitive element composed of a semiconductor film provided on said first substrate through a first insulation film interposed therebetween, lead wires connected to said magneto-sensitive element and a second substrate of a magnetic material having a high permeability formed so as to cover said magneto-sensitive element through a second interposed insulation film, the improvement residing in that said magneto-sensitive element is composed of a polycristalline thin film containing at least a crystal particle having a longitudinal diameter of at least 30 μm.
Claim 3
Dependent Claim
27 words
A semiconductor magnetic head as set forth in claim 1, wherein said magneto-sensitive element is selected from a group consisting of Hall elements and magnetic resistance elements.
Claim 4
Dependent Claim
27 words
A semiconductor magnetic head as set forth in claim 1, wherein said semiconductor is selected from a group consisting of InSb, InAs, InBi, AlSb, GaSb and Ge.
Claim 5
Dependent Claim
27 words
A semiconductor magnetic head as set forth in claim 1, wherein said magneto-sensitive element is deposited on a film of alumina or an insulation film containing alumina.
Claim 6
Dependent Claim
23 words
A semiconductor magnetic head as set forth in claim 4, wherein said insulation film contains 3 to 100 inclusive mol % of alumina.
Claim 7
Dependent Claim
28 words
A semiconductor magnetic head as set forth in claim 4, wherein said semiconductor magneto-sensitive element is selected from a group consisting of Hall elements and magnetic resistance elements.
Claim 8
Dependent Claim
27 words
A semiconductor magnetic head as set forth in claim 4, wherein said semiconductor is selected from a group consisting of InSb, InAs, InBi, AlSb, GaSb and Ge.
Claim 9
Dependent Claim
113 words
In a magnetic head including at least one substrate of a magnetic material having a high permeability, said substrate having a layer of insulating material on one surface of said substrate, and a Hall element disposed at said one surface, the improvement comprising said Hall element including a thin layer of polycrystalline semiconductor material disposed on said insulating material at said one surface, said polycrystalline material having at least one single crystal area having a dimension in the plane of said thin film layer of at least 30 μm such that said Hall element has the property of a signal-to-noise ratio of less than 1/3 to 1/2 that of a conventional Hall element.
Claim 10
Dependent Claim
113 words
In a magnetic head including at least one substrate of a magnetic material having a high permeability, said substrate having a layer of insulating material on one surface of said substrate, and a Hall element disposed at said one surface, the improvement comprising said Hall element including a thin layer of polycrystalline semiconductor material disposed on said insulating material at said one surface, said polycrystalline material having at least one single crystal area having a dimension in the plane of said thin film layer of at least 30 μm such that said Hall element has the property of a signal-to-noise ratio of less than 1/3 to 1/2 that of a conventional Hall element.
Claim 11
Dependent Claim
46 words
A magnetic head according to claim 8, wherein said polycrystalline material has a plurality of single crystal areas, each single crystal area having said dimension exceeding 30 μm such that the average value of said dimension for all of said single crystal areas exceeds 100 μm.
Claim 12
Dependent Claim
15 words
A magnetic head according to claim 9, wherein said layer of insulating material includes alumina.
Claim 13
Dependent Claim
23 words
A magnetic head according to claim 10, wherein alumina is present in said insulating layer in an amount of 3 to 100 mol%.
Claim 14
Dependent Claim
40 words
A magnetic head according to claim 9, wherein said layer of insulating material is provided with a recess containing said thin film layer of polycrystalline semiconductor material, said recess having a configuration corresponding to the shape of said Hall element.
Claim 15
Dependent Claim
23 words
A magnetic head according to claim 9, wherein said magnetic material of said substrate is a ferrite, and said semiconductor material is InSb.
Claim 16
Dependent Claim
15 words
A magnetic head according to claim 8, wherein said layer of insulating material includes alumina.
Claim 17
Dependent Claim
23 words
A magnetic head according to claim 14, wherein alumina is present in said insulating layer in an amount of 3 to 100 mol%.
Claim 18
Dependent Claim
40 words
A magnetic head according to claim 8, wherein said layer of insulating material is provided with a recess containing said thin film layer of polycrystalline semiconductor material, said recess having a configuration corresponding to the shape of said Hall element.
Claim 19
Dependent Claim
23 words
A magnetic head according to claim 8, wherein said magnetic material of said substrate is a ferrite, and said semiconductor material is InSb.
References Cited (Backward Citations)
US3082507A
Cited
US3260980A
Cited
US3296573A
Cited
US2914728A
Cited
US3202913A
Cited
US3643035A
Cited
US3661570A
Cited
US3657806A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-09 | 1979-09-08 | 1980-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-09 | 1983-09-08 | 1984-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-09 | 1987-09-08 | 1988-03-09 | $7700.00 | Window Closed / Lapsed |