US3942244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor element
Assignee: Semikron GmbH and Co KG
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Filing: 1974-05-24
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Granted: 1976-03-09
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Expires: 1994-05-24
Abstract
Abstract A semiconductor electrode is prepared by (a) contacting a semiconductor w a first contacting metal (capable of forming an alloy with the semiconductor), (b) contacting the first contacting metal with a ductile layer of a second contacting metal, (c) heating the resulting combination so as to form, simultaneously, a liquid phase between the semiconductor and the first contacting metal and between the first contacting metal and the ductile second contacting metal, however leaving intact a major portion of the ductile second contacting metal layer, and (d) cooling the thus obtained product whereby a solder contact which is resistant to load fluctuations can be readily made on the ductile layer with known semiconductor hard solder.
Inventors
- 👤 Peter Flohrs
- 👤 Horst Schafer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:38
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/40; H10P14/46; H10W; H10W99/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
193 words
A process for the preparation of a contact electrode for semiconductor devices, comprising the steps of forming a layered structure of a layer of a first contacting metal physically contacting a semiconductor surface and a layer of a ductile second contacting metal physically contacting the surface of the layer of the first contacting metal opposite that physically contacting the semiconductor surface, the first contacting metal being one which forms an alloy with the semiconductor, and subjecting said layered structure to a heat treatment during which liquid phases are simultaneously maintained at the border area between the semiconductor and the first contacting metal layer and at the border area between the first contacting metal layer and the second contacting metal layer, the thickness of the layer of the second contacting metal and the conditions of the heat treatment being chosen for retaining the ductility of a predominant portion of the second contacting metal layer, and the temperature of said heat treatment being below the eutectic temperature of the combination of semiconductor and second contacting metal but above the eutectic temperature of the two contacting metals and the combination of semiconductor and first contacting metal.
Claim 2
Dependent Claim
193 words
A process for the preparation of a contact electrode for semiconductor devices, comprising the steps of forming a layered structure of a layer of a first contacting metal physically contacting a semiconductor surface and a layer of a ductile second contacting metal physically contacting the surface of the layer of the first contacting metal opposite that physically contacting the semiconductor surface, the first contacting metal being one which forms an alloy with the semiconductor, and subjecting said layered structure to a heat treatment during which liquid phases are simultaneously maintained at the border area between the semiconductor and the first contacting metal layer and at the border area between the first contacting metal layer and the second contacting metal layer, the thickness of the layer of the second contacting metal and the conditions of the heat treatment being chosen for retaining the ductility of a predominant portion of the second contacting metal layer, and the temperature of said heat treatment being below the eutectic temperature of the combination of semiconductor and second contacting metal but above the eutectic temperature of the two contacting metals and the combination of semiconductor and first contacting metal.
Claim 3
Dependent Claim
39 words
A process according to claim 1 wherein the first contacting metal is aluminum, the second contacting metal is silver and the temperature of the heat treatment is at a temperature within the range of from 600° to 700° C.
Claim 4
Dependent Claim
59 words
A process for the preparation of a contact electrode for semiconductor devices according to claim 1 wherein: (a) said layer of first contacting metal is applied to said semiconductor surface, and (b) said layer of ductile second contacting metal is applied to the surface of the layer of the first contacting metal opposite that applied to the semiconductor surface.
Claim 5
Dependent Claim
19 words
A process according to claim 3 wherein at least one of the contacting metals is applied by vapor deposition.
Claim 6
Dependent Claim
19 words
A process according to claim 4 wherein the contacting metals are applied by consecutive vapor deposition under high vacuum.
Claim 7
Dependent Claim
18 words
A process according to claim 3 wherein at least one of the contacting metals is applied by precipitation.
Claim 8
Dependent Claim
19 words
A process according to claim 3 wherein at least one of the contacting metals is applied by cathode sputtering.
Claim 9
Dependent Claim
19 words
A process according to claim 3 wherein the ductile second contacting metal is applied in a plurality of layers.
Claim 10
Dependent Claim
27 words
A process according to claim 8 wherein at least one layer of the first contacting metal is interposed between two successive layers of a second contacting metal.
Claim 11
Dependent Claim
41 words
A process according to claim 3 wherein the semiconductor is at a temperature of from 200° to 300° C when the layer of the first contacting metal is applied thereto, whereby the adhesion between said layer and said conductor is increased.
Claim 12
Dependent Claim
16 words
A process according to claim 3 wherein the heat treatment is effected in a protective-gas atmosphere.
Claim 13
Dependent Claim
15 words
A process according to claim 3 wherein the heat treatment is effected in a vacuum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-09 | 1979-09-08 | 1980-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-09 | 1983-09-08 | 1984-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-09 | 1987-09-08 | 1988-03-09 | $7700.00 | Window Closed / Lapsed |