US3938110A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of controlling magnetic strip domains
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1974-02-05
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Granted: 1976-02-10
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Expires: 1994-02-05
Abstract
Abstract A method of controlling magnetic strip domains is disclosed wherein a magnetic material having at least one ion-implanted region is placed under a bias magnetic condition which permits magnetic strip domains to exist in said magnetic material and subjected to one or more control magnetic fields to thereby generate and/or control magnetic strip domains.
Inventors
- 👤 Shoei Kataoka
- 👤 Toshio Tsurushima
- 👤 Yoshinobu Sugiyama
- 👤 Hisao Tanoue
- 👤 Hideo Yamada
- 👤 Yasuo Komamiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:13
CPC Classifications
H; H03; H03M; H03M7/00; H03M7/001; H03M7/002; G; G01; G01R; G01R33/00; G01R33/12; G01R33/1207; G11; G11C; G11C11/00; G11C11/18; G11C19/00; G11C19/02; G11C19/08; G11C19/0858; G11C19/0866; G11C19/0875; G11C19/0883; G11C19/0891; H03K; H03K19/00; H03K19/02; H03K19/16; H03K19/168
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
59 words
A method of controlling magnetic strip domains comprising: putting magnetic material provided with at least one ion-implanted region under a bias magnetic condition which permits the existence of at least one magnetic strip domain in said magnetic material, and applying at least one control magnetic field to said magnetic material, whereby said magnetic strip domain is generated or controlled.
Claim 2
Independent Claim
59 words
A method of controlling magnetic strip domains comprising: putting magnetic material provided with at least one ion-implanted region under a bias magnetic condition which permits the existence of at least one magnetic strip domain in said magnetic material, and applying at least one control magnetic field to said magnetic material, whereby said magnetic strip domain is generated or controlled.
Claim 3
Dependent Claim
29 words
The method according to claim 1, wherein said control magnetic field is an in-plane magnetic field, whereby at least one magnetic strip domain is generated in said magnetic material.
Claim 4
Dependent Claim
29 words
The method according to claim 1, wherein said control magnetic field is an in-plane magnetic field, whereby at least one magnetic strip domain is annihilated in said magnetic material.
Claim 5
Dependent Claim
33 words
The method according to claim 1, wherein said control magnetic field is an in-plane magnetic field, whereby said at least one magnetic strip domain is generated from at least one magnetic bubble domain.
Claim 6
Dependent Claim
33 words
The method according to claim 1, wherein said control magnetic field is an in-plane magnetic field, whereby at least one magnetic bubble domain is generated from said at least one magnetic strip domain.
Claim 7
Dependent Claim
69 words
The method according to claim 1, wherein said control magnetic field is applied normal to the surface of said magnetic material and at a strength sufficient to annihilate said magnetic strip domain in the area surrounded by the boundary between said ion-implanted region and unimplanted region, whereby said magnetic strip domain in said area is annihilated and remains annihilated even after application of said control magnetic field is discontinued.
Claim 8
Dependent Claim
59 words
The method according to claim 6, wherein said control magnetic field is further applied normal to the surface of said magnetic material in the direction opposite that used for annihilating said magnetic strip domain, whereby said magnetic strip domain is regnerated and remains in existence even after application of said control magnetic field in the opposite direction is discontinued.
Claim 9
Dependent Claim
29 words
The method according to claim 1, wherein said control magnetic field is an in-plane magnetic field, whereby at least one magnetic strip domain is moved in said magnetic material.
Claim 10
Dependent Claim
43 words
The method according to claim 8, wherein said in-plane magnetic field is an alternating in-plane magnetic field, whereby at least one magnetic strip domain is moved back and forth along the boundary between said ion-implanted region and uniplanted region in said magnetic material.
Claim 11
Dependent Claim
41 words
The method according to claim 8, wherein said in-plane magnetic field is a rotating in-plane magnetic field, whereby said at least one magnetic strip domain is moved along the boundary between said ion-implanted region and unimplanted region in said magnetic material.
Claim 12
Dependent Claim
46 words
The method according to claim 10, wherein the rotation of said in-plane magnetic field is stopped, whereby said at least one magnetic strip domain is rearranged to have a pattern in alignment with said boundary between said ion-implanted region and unimplanted region in said magnetic material.
Claim 13
Dependent Claim
31 words
The method according to claim 1, wherein said at least one magnetic strip domain is stretched along the boundary between said ion-implanted region and unimplanted region by said control magnetic field.
Claim 14
Dependent Claim
35 words
The method according to claim 12, wherein at least one local magnetic field is applied near the path of stretching of said magnetic strip domain, whereby the stretching of said magnetic strip domain is controlled.
Claim 15
Dependent Claim
21 words
The method according to claim 13, wherein said at least one local magnetic field is generated by a magnetic bubble domain.
Claim 16
Dependent Claim
23 words
The method according to claim 13, wherein said at least one local magnetic field is generated by passing a current through a conductor.
Claim 17
Dependent Claim
26 words
The method according to claim 13, wherein said magnetic material is further provided with an inhibiting means to inhibit the stretching of said magnetic strip domain.
Claim 18
Dependent Claim
14 words
The method according to claim 16, wherein said inhibiting means is another magnetic material.
Claim 19
Dependent Claim
26 words
The method according to claim 13, wherein said magnetic material is further provided with an inhibiting region to inhibit the stretching of said magnetic strip domain.
Claim 20
Dependent Claim
33 words
The method according to claim 18, wherein said inhibiting region is made by a local variation in magnetic property of the boundary between said ion-implanted region and unimplanted region in said magnetic material.
Claim 21
Dependent Claim
32 words
The method according to claim 18, wherein said inhibiting region is made by a local variation in shape of the boundary between said ion-implanted region and unimplanted region in said magnetic material.
Claim 22
Dependent Claim
26 words
The method according to claim 13, wherein said magnetic material is further provided with a promoting means to promote the stretching of said magnetic strip domain.
Claim 23
Dependent Claim
14 words
The method according to claim 21, wherein said promoting means is another magnetic material.
Claim 24
Dependent Claim
26 words
The method according to claim 13, wherein said magnetic material is further provided with a promoting region to promote the stretching of said magnetic strip domain.
Claim 25
Dependent Claim
33 words
The method according to claim 23, wherein said promoting region is made by a local variation in magnetic property of the boundary between said ion-implanted region and unimplanted region in said magnetic material.
Claim 26
Dependent Claim
32 words
The method according to claim 23, wherein said promoting region is made by a local variation in shape of the boundary between said ion-implanted region and unimplanted region in said magnetic material.
Claim 27
Dependent Claim
18 words
The method according to claim 1 including in addition, detecting said magnetic strip domain in said magnetic material.
Claim 28
Dependent Claim
35 words
The method according to claim 26, wherein said magnetic strip domain in said magnetic material is detected by a Hall element a part of which is subjected to magnetic field from said magnetic strip domain.
Claim 29
Dependent Claim
22 words
The method according to claim 27, wherein the current flow of said Hall element is in parallel with said magnetic strip domain.
Claim 30
Dependent Claim
23 words
The method according to claim 27, wherein the current flow of said Hall element is at an angle with said magnetic strip domain.
Claim 31
Dependent Claim
21 words
The method according to claim 27, wherein the current flow of said Hall element is normal to said magnetic strip domain.
Claim 32
Dependent Claim
13 words
The method according to claim 27, wherein said Hall element has four electrodes.
Claim 33
Dependent Claim
13 words
The method according to claim 27, wherein said Hall element has three electrodes.
Claim 34
Dependent Claim
64 words
A logic device comprising: a magnetic material provided with at least one magnetic strip domain stretching region made by local ion-implantation, at least one means for generating at least one magnetic strip domain, at least one means for controlling the stretching of said at least one magnetic strip domain, and at least one detecting means for detecting said at least one controlled magnetic domain.
Claim 35
Dependent Claim
64 words
A logic device comprising: a magnetic material provided with at least one magnetic strip domain stretching region made by local ion-implantation, at least one means for generating at least one magnetic strip domain, at least one means for controlling the stretching of said at least one magnetic strip domain, and at least one detecting means for detecting said at least one controlled magnetic domain.
Claim 36
Dependent Claim
15 words
The logic device according to claim 33, wherein said generating means is a magnetic domain.
Claim 37
Dependent Claim
14 words
The logic device according to claim 33, wherein said generating means is a conductor.
Claim 38
Dependent Claim
16 words
The logic device according to claim 33, wherein said generating means is an in-plane magnetic field.
Claim 39
Dependent Claim
15 words
The logic device according to claim 33, wherein said control means is a magnetic domain.
Claim 40
Dependent Claim
14 words
The logic device according to claim 33, wherein said control means is a conductor.
Claim 41
Dependent Claim
15 words
The logic device according to claim 33, wherein said detecting means is a Hall element.
Claim 42
Dependent Claim
21 words
The logic device according to claim 33, wherein said magnetic strip domain stretching region has a local variation in magnetic property.
Claim 43
Dependent Claim
20 words
The logic device according to claim 33, wherein said magnetic strip domain stretching region has a local variation in shape.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-02-09 | 1979-08-11 | 1980-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-02-09 | 1983-08-11 | 1984-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-02-09 | 1987-08-11 | 1988-02-10 | $7700.00 | Window Closed / Lapsed |