US3935328A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for providing dielectric isolation in an epitaxial layer of a compound semiconductor using the plasma oxidation
Assignee: Individual
•
Filing: 1973-10-11
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Granted: 1976-01-27
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Expires: 1993-10-11
Abstract
Abstract Method for providing dielectric isolation of an epitaxial layer of a compound semiconductor or for providing separation and protection of pn-junction of a compound semiconductor by applying plasma oxidation.
Inventors
- 👤 Takuo Sugano
- 👤 Yoshifumi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 12:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10D; H10D99/00; H10P14/61; H10P14/6319; H10P95/00; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/085; Y10S148/117; Y10S148/118
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
143 words
A method for providing dielectric isolation of an epitaxial layer of a compound semiconductor of gallium arsenide (GaAs) comprising the steps of; a. forming a film of said compound semiconductor on an insulative or semi-insulative substrate, b. coating an aluminum (Al) mask layer by evaporation on the surface of the compound semiconductor film, c. selectively removing the aluminum (Al) mask layer by a photoresist process from an area where the compound semiconductor is to be oxidized, d. oxidizing the exposed area of removed aluminum (Al) of the compound semiconductor by placing it in a hot plasma produced by a high frequency hot plasma discharge at a temperature range of about 1,000°-1,300°C in an oxygen atmosphere of about 0.3 Torr until the oxidation is completed up to a depth to reach to the substrate, and e. removing the remaining aluminum (Al) mask by etching.
Claim 2
Independent Claim
143 words
A method for providing dielectric isolation of an epitaxial layer of a compound semiconductor of gallium arsenide (GaAs) comprising the steps of; a. forming a film of said compound semiconductor on an insulative or semi-insulative substrate, b. coating an aluminum (Al) mask layer by evaporation on the surface of the compound semiconductor film, c. selectively removing the aluminum (Al) mask layer by a photoresist process from an area where the compound semiconductor is to be oxidized, d. oxidizing the exposed area of removed aluminum (Al) of the compound semiconductor by placing it in a hot plasma produced by a high frequency hot plasma discharge at a temperature range of about 1,000°-1,300°C in an oxygen atmosphere of about 0.3 Torr until the oxidation is completed up to a depth to reach to the substrate, and e. removing the remaining aluminum (Al) mask by etching.
Claim 3
Dependent Claim
24 words
A method as claimed in claim 1, wherein the high frequency discharge is caused by a high frequency source operated at about 6-7 KV.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-01-26 | 1979-07-28 | 1980-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-01-26 | 1983-07-28 | 1984-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-01-26 | 1987-07-28 | 1988-01-27 | $7700.00 | Window Closed / Lapsed |