Wideband differential amplifier

Claim 2

An integrated circuit wide band differential amplifier comprising: a. a pair of differentially coupled transistors having normally non-linear current and voltage output characteristics as a function of an input voltage applied thereto, said differentially coupled transistors being disposed in a unitary semiconductor substrate, the emitters of which are coupled together to a reference voltage through a suitable source of current, each transistor also having a base terminal and a collector output terminal, and b. a pair of input devices receiving differential input currents, each input device coupled to a different one of said base terminals, said input devices each comprising an input transistor having a p-type region and an n-type region forming a p-n junction, one of said p and n-type regions of said input transistor of said input devices being coupled to the base of one of said differentially coupled transistors and the other of said p and n-type regions of each said input transistor being coupled to said source of reference voltage, said differentially coupled transistors and said input transistors having substantially identical current and voltage output characteristics as a function of input voltage applied thereto.

Claim 3

An integrated circuit wide band differential amplifer as set forth in claim 1 wherein each of said input transistors is disposed on the same substrate as said differentially coupled transistors.

Claim 4

An integrated circuit wide band differential amplifier as set forth in claim 1 wherein each of said input transistors includes a base-emitter junction, the base terminal thereof being coupled to the base of the associated differentially coupled transistor and the emitter of said input and differentially coupled transistors being coupled together through a source of current.

Claim 5

An integrated circuit wide band differential amplifier as set forth in claim 2 wherein each of said input transistors includes a base emitter junction, the base terminal thereof being coupled to the base of the associate differentially coupled transistor and the emitter of each of said input and differentially coupled transistors being coupled together through a source of current.

Claim 6

An integrated circuit wide band differential amplifier as set forth in claim 1 wherein each of said input transistors includes a base-emitter junction, the emitter terminal thereof being coupled to the base of the associated differentially coupled transistor and the base of each of said input transistors and the emitters of each of said differentially coupled transistors being coupled together through a source of current.

Claim 7

An integrated circuit wide band differential amplifier as set forth in claim 2 wherein each of said input transistors includes a base-emitter junction, the emitter terminal thereof being coupled to the base of the associated differentially coupled transistor and the base of each of said input transistors and the emitters of each of said differentially coupled transistors being coupled together through a source of current.

Claim 8

An integrated circuit wide band differential amplifier as set forth in claim 5 wherein the collector of each of said input transistors is connected to the collector of the one of the transistors of said differentially coupled transistors whose base is coupled to the other of the input transistors.

Claim 9

An integrated circuit wide band differential amplifier as set forth in claim 6 wherein the collector of each of said input transistors is connected to the collector of the one of the transistors of said differentially coupled transistors whose base is coupled to the other of the input transistors.

Claim 10

An integrated circuit wide band differential amplifier on a single semiconductor substrate which comprises: a. a first transistor having emitter, base and collector terminals, b. a second transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said first transistor, c. a third transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said second transistor, d. a fourth transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said third transistor, e. the emitters of said first and second transistor each being coupled together, f. the base and collector of said third transistor being coupled to the base of said first transistor, g. the base and collector of said fourth transistor being coupled to the base of said second transistor, and h. the emitters of said third and fourth transistors each being coupled to a source of reference potential.

Claim 11

An integrated circuit wide band differential amplifier on a single semiconductor substrate which comprises: a. a first transistor having emitter, base and collector terminals, b. a second transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said first transistor, c. a third transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said second transistor, d. a fourth transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said third transistor, e. the emitters of said first and second transistor each being coupled together, f. the base and collector of said third transistor being coupled to the base of said first transistor, g. the base and collector of said fourth transistor being coupled to the base of said second transistor, and h. the emitters of said third and fourth transistors each being coupled to a source of reference potential.

Claim 12

An integrated circuit wide band differential amplifier on a single semiconductor substrate which comprises, a. a first transistor having emitter, base and collector terminals, b. a second transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said first transistor, c. a third transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said second transistor, d. a fourth transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said third transistor, e. the emitters of said first and second transistors each being coupled together, f. the emitter of said third transistor being coupled to the base of said first transistor, g. the emitter of said fourth transistor being coupled to the base of said second transistor, and h. each of the base and collector of said third and fourth transistors being coupled to a common source of reference potential.

Claim 13

An integrated circuit wide band differential amplifier on a single semiconductor substrate which comprises, a. a first transistor having emitter, base and collector terminals, b. a second transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said first transistor, c. a third transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said second transistor, d. a fourth transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said third transistor, e. the emitters of said first and second transistors each being coupled together, f. the emitter of said third transistor being coupled to the base of said first transistor, g. the emitter of said fourth transistor being coupled to the base of said second transistor, and h. each of the base and collector of said third and fourth transistors being coupled to a common source of reference potential.

Claim 14

An integrated circuit wide band differential amplifier on a single semiconductor substrate which comprises, a. a first transistor having emitter, base and collector terminals, b. a second transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said first transistor, c. a third transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said second transistor, d. a fourth transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said third transistors, e. the emitters of said first and second transistors each being coupled together, f. the emitter of said third transistor being coupled to the base of said first transistor, g. the emitter of said fourth transistor being coupled to the base of said second transistor, h. the base of each of said third and fourth transistors being coupled to a common source of reference voltage; i. the collector of said third transistor being coupled to the collector of said second transistor, and j. the collector of said fourth transistor being coupled to the collector of said first transistor.

Claim 15

An integrated circuit wide band differential amplifier on a single semiconductor substrate which comprises, a. a first transistor having emitter, base and collector terminals, b. a second transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said first transistor, c. a third transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said second transistor, d. a fourth transistor having emitter, base and collector terminals and having substantially identical voltage and current output characteristics as a function of input voltage as said third transistors, e. the emitters of said first and second transistors each being coupled together, f. the emitter of said third transistor being coupled to the base of said first transistor, g. the emitter of said fourth transistor being coupled to the base of said second transistor, h. the base of each of said third and fourth transistors being coupled to a common source of reference voltage; i. the collector of said third transistor being coupled to the collector of said second transistor, and j. the collector of said fourth transistor being coupled to the collector of said first transistor.