Charge transfer device

Claim 2

A CHARGE TRANSFER DEVICE COMPRISING: A SEMICONDUCTOR SUBSTRATE OF A FIRST CONDUCTIVITY HAVING AN UNEVEN SURFACE FORMED OF SQUARE CORNERED NOTCHES; AT LEAST TWO SEMICONDUCTOR SWITCHES EACH HAVING A SOURCE, DRAIN, CHANNEL AND GATE REGION; SAID DRAIN AND SOURCE REGION BEING POSITIONED HIGHER THAN SAID CHANNEL REGION AND BEING OF OPPOSITE CONDUCTIVEITY SUCH THAT P-N JUCTIONS AR3 FORMED ABOVE THE SURFACE OF SAID SUBSTRATE BETWEEN SAID DRAIN AND SOURCE REGIONS; AN INSULATING LAYER CONVERTING SAID SOURCE, DRAIN AND CHANNEL REGIONS OF EACH SEMICONDUCTOR SWITCH AND FORMING A CAPACITOR IN PARALLEL WITH SAID GATE AND DRAIN REGIONS.

Claim 3

A charge transfer device comprising: a semiconductor substrate having a first type of conductivity formed with square cornered notches; a plurality of island areas of the second type conductivity arrayed unidirectionally and projecting from said substrate and forming with said substrate P-N junctions which lie in plane offset from the plane portion of the substrate between said island areas; an insulating layer covering said island areas and portions of said substrate therebetween; and a plurality of gate electrodes arranged along said island areas and said substrate and forming a plurality of switching devices and capacitors.

Claim 4

A charge transfer device comprising: a semiconductor substrate having a first type of conductivity formed with square cornered notches; a plurality of island areas of the second type conductivity arrayed unidirectionally and projecting from said substrate and forming with said substrate P-N junctions which lie in plane offset from the plane portion of the substrate between said island areas; an insulating layer covering said island areas and portions of said substrate therebetween; and a plurality of gate electrodes arranged along said island areas and said substrate and forming a plurality of switching devices and capacitors.

Claim 5

A charge transfer device comprising: a semiconductor substrate of one conductivity type, at least two semiconductor switches each having island areas of opposite conductivity type formed on said substrate, said island areas being separated from each other by square cornered gutters such that P-N junctions are formed which lie in a plane above the bottoms of said gutters; an insulating layer covering said island areas and said gutters; and a plurality of gate metal layers on said insulating layer over said island areas and said gutters.

Claim 6

A charge transfer device comprising: a semiconductor substrate of one conductivity type, at least two semiconductor switches each having island areas of opposite conductivity type formed on said substrate, said island areas being separated from each other by square cornered gutters such that P-N junctions are formed which lie in a plane above the bottoms of said gutters; an insulating layer covering said island areas and said gutters; and a plurality of gate metal layers on said insulating layer over said island areas and said gutters.

Claim 7

A charge transfer device comprising: a semiconductor substrate wafer of one conductivity type; a plurality of islands in said wafer of opposite conductivity type located adjacent one surface of said wafer, square cornered gutters formed in said wafer between said islands such that P-N junctions are formed in a plane offset from the bottom of said gutters; adjacent portions of said islands forming source and drain regions; an insulating layer covering said islands and said gutters; regions below said gutters forming channel regions connecting said source and drain regions lying in a plane below said P-N junctions formed between said source and drain regions and said substrate anD metal electrodes connected to said source, gate and drain regions to provide input electrodes and capacitance with said insulating layer and said substrate and said capacitance connected in shunt across each drain region and its associated gate region.

Claim 8

A charge transfer device comprising: a semiconductor substrate wafer of one conductivity type; a plurality of islands in said wafer of opposite conductivity type located adjacent one surface of said wafer, square cornered gutters formed in said wafer between said islands such that P-N junctions are formed in a plane offset from the bottom of said gutters; adjacent portions of said islands forming source and drain regions; an insulating layer covering said islands and said gutters; regions below said gutters forming channel regions connecting said source and drain regions lying in a plane below said P-N junctions formed between said source and drain regions and said substrate anD metal electrodes connected to said source, gate and drain regions to provide input electrodes and capacitance with said insulating layer and said substrate and said capacitance connected in shunt across each drain region and its associated gate region.

Claim 9

A device according to claim 4 in which a source region of one transistor is electrically connected to the drain region of the next succeeding transistor.

Claim 10

A device according to claim 5 in which there is provided two lines for receiving shift signals which are substantial square wave pulses which alternate in time with respect to each other, means for connecting the gate electrode of alternate transistors to one of said lines and means for connecting the gate electrodes of the remaining transistors to the other of said lines.

Claim 11

A charge transfer device comprising: a semiconductor substrate of a first conductivity type; a plurality of islands of opposite conductivity type formed on said substrate and aligned such that portions of said islands serve as a drain for a source on an adjacent island and other portions of said islands serve as a source for another adjacent island, gutters having straight side walls and a straight bottom formed in said substrate between said islands such that P-N junctions between said islands and said substrate lie in a plane above the bottoms of said gutters and which intersect said side walls, a layer of insulation on said islands and the side walls and bottoms of said gutters, a first plurality of conductive layers overlying alternate gutters and substantial portions of one of the adjacent alternate islands, and a second plurality of conductive layers overlying the gutters between said alternate gutters and substantial portions of the remaining islands.

Claim 12

A charge transfer device comprising: a semiconductor substrate of a first conductivity type; a plurality of islands of opposite conductivity type formed on said substrate and aligned such that portions of said islands serve as a drain for a source on an adjacent island and other portions of said islands serve as a source for another adjacent island, gutters having straight side walls and a straight bottom formed in said substrate between said islands such that P-N junctions between said islands and said substrate lie in a plane above the bottoms of said gutters and which intersect said side walls, a layer of insulation on said islands and the side walls and bottoms of said gutters, a first plurality of conductive layers overlying alternate gutters and substantial portions of one of the adjacent alternate islands, and a second plurality of conductive layers overlying the gutters between said alternate gutters and substantial portions of the remaining islands.