Device for varying output voltage within a limited range

Claim 1

A DEVICE FOR VARYING OUTPUT VOLTAGE WITHIN A LIMITED RANGE COMPRISING A. A SINGLE-POLE, DOUBLE-THROW, CENTER-OFF SWITCH, B. A NEON BULB HAVING ONE TERMINAL IN SERIES CONNECTION WITH AN ARMATURE OF SAID SWITCH, C. A MOS FIELD-EFFECT TRANSISTOR THE GATE OF SAID MOS FIELDEFFECT TRANSISTOR BEING CONNECTED TO ONE TERMINAL OF SAID NEON BULB, D. A NON-POLARIZED CAPACITOR CONNECTED BETWEEN THE GATE OF SAID MOS FIELD-EFFECT TRANSISTOR AND GROUND, E. AN OUTPUT RESISTOR CONNECTED BETWEEN THE SOURCE OF SAID MOS FIELD-EFFECT TRANSISTOR AND GROUND, F. A FIRST DIODE AND RESTANCE MEANS, THE ANODE OF SAID FIRST DIODE BEING CONNECTED TO SAID ARMATURE OF SAID SWITCH THROUGH SAID RESISTANCE MEAS, G. A P-GATE TYPE SILICON-CONTROLLED RECTIFIER WHOSE ANODE IS CONNECTED TO THE CATHODE IS CONNECTED TO THE ANODE H. A CONTROL RESISTOR, THE GATES OF SAID P-GATES OF SAID P-GATE OF SAID FIRST DIODE, I. A N-GATE FYPE SILICON-CONTROLLED RECTIFIER WHOSE CATHODE IS CONNECTED TO THE ANODE OF SAID SECOND DIODE, AND J. A CONTROL RESISTOR, THE GATES OF SAID P-GATE TYPE AND N-GATE TYPE SILICON-CONTROLLED RECTIFIERS BEING CONNECTED THROUGH SAID CONTROL RESISTOR TO THE SOURCE OF SAID MOS FIELD-EFFECT TRANSISTOR, WHEREBY THE OUTPUT VOLTAGE IS DERIVED FROM THE SOURCE OF SAID MOS FILED-EFFECT TRANSISTOR WHILE THE CONTROL VOLTAGE FOR LIMITING THE OUTPUT VOLTAGE IS APPLIED TO THE CATHODE OF THE P-GATE TYPE SILICON-CONTROLLED RECTIFIER OR TO THE ANODE OF THE N-GATE TYPE SILICON-CONTROLLED RECTIFIER.

Claim 2

A DEVICE FOR VARYING OUTPUT VOLTAGE WITHIN A LIMITED RANGE COMPRISING A. A SINGLE-POLE, DOUBLE-THROW, CENTER-OFF SWITCH, B. A NEON BULB HAVING ONE TERMINAL IN SERIES CONNECTION WITH AN ARMATURE OF SAID SWITCH, C. A MOS FIELD-EFFECT TRANSISTOR THE GATE OF SAID MOS FIELDEFFECT TRANSISTOR BEING CONNECTED TO ONE TERMINAL OF SAID NEON BULB, D. A NON-POLARIZED CAPACITOR CONNECTED BETWEEN THE GATE OF SAID MOS FIELD-EFFECT TRANSISTOR AND GROUND, E. AN OUTPUT RESISTOR CONNECTED BETWEEN THE SOURCE OF SAID MOS FIELD-EFFECT TRANSISTOR AND GROUND, F. A FIRST DIODE AND RESTANCE MEANS, THE ANODE OF SAID FIRST DIODE BEING CONNECTED TO SAID ARMATURE OF SAID SWITCH THROUGH SAID RESISTANCE MEAS, G. A P-GATE TYPE SILICON-CONTROLLED RECTIFIER WHOSE ANODE IS CONNECTED TO THE CATHODE IS CONNECTED TO THE ANODE H. A CONTROL RESISTOR, THE GATES OF SAID P-GATES OF SAID P-GATE OF SAID FIRST DIODE, I. A N-GATE FYPE SILICON-CONTROLLED RECTIFIER WHOSE CATHODE IS CONNECTED TO THE ANODE OF SAID SECOND DIODE, AND J. A CONTROL RESISTOR, THE GATES OF SAID P-GATE TYPE AND N-GATE TYPE SILICON-CONTROLLED RECTIFIERS BEING CONNECTED THROUGH SAID CONTROL RESISTOR TO THE SOURCE OF SAID MOS FIELD-EFFECT TRANSISTOR, WHEREBY THE OUTPUT VOLTAGE IS DERIVED FROM THE SOURCE OF SAID MOS FILED-EFFECT TRANSISTOR WHILE THE CONTROL VOLTAGE FOR LIMITING THE OUTPUT VOLTAGE IS APPLIED TO THE CATHODE OF THE P-GATE TYPE SILICON-CONTROLLED RECTIFIER OR TO THE ANODE OF THE N-GATE TYPE SILICON-CONTROLLED RECTIFIER.

Claim 6

A device for varying output voltage within a limited range as defined in claim wherein said resistance means comprises a first resistor, a second resistor and a third resistor, said first resistor being connected to said armature, said third resistor being connected to one terminal of said neon bulb, said first and third resistors being in series connection, said second resistor being connected between said first and third resistors and having one terminal connected to the anode of said first diode.