US3916255A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phase array target amplifiers
Assignee: Northrop Grumman Systems Corp
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Filing: 1974-03-25
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Granted: 1975-10-28
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Expires: 1994-03-25
Abstract
Abstract A phase array target amplifier for generating multiple channels of high frequency electromagnetic power. The amplifier comprises a plurality of spaced apart amplifier channels, each of which contains similar channel components. Thus, the amplifier includes a plurality of electron generating guns which generate a plurality of electron beams, and where each of the beams exists in a separate beam channel. Deflector plates to modulate the beams are located along the beam path for optionally and individually or simultaneously deflecting various of the electron beams. In addition, an electron drift region is established downstream from the deflector plates by means of a pair of opposed phase shift electrodes. The velocity of the various beams are modulated in these drift regions through the potential on the phase shift electrodes so that each of the beams are phase shifted in a time controlled manner with respect to each of the other beams. A semiconductor target device is also provided in each amplifier channel so that each target device is associated with an individual electron beam. These target devices are modulated responsive to the fraction of the beams current deflected on the active region of the target devices, to generate an array of amplified output signals with controlled phase relationship. In this way, it is possible to drive multiple power radiating arrays (e. g. phase array antennas).
Inventors
- 👤 Walter Ellis Crandall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:14
CPC Classifications
H; H01; H01Q; H01Q3/00; H01Q3/26; H01Q3/30; H01Q3/34
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
226 words
A phase array target amplifier apparatus for generating multiple channels of high frequency electromagnetic power from a single high frequency electromagnetic power signal, the signals in said channels having predetermined phase shifts relative to each other, said amplifier apparatus comprising: a. a plurality of spaced apart electron generating elements for generating a plurality of electron beams, b. individual spaced apart electrically energizable deflector means associated with each of said electron generating elements and located downstream with respeCt to the path of the electron beams for individually deflecting each of the electron beams in response to said single high frequency power signal, c. individual phase shift electrode means associated with each one of said electron generating elements and associated ones of said deflector means and being located downstream from said deflector means with respect to the path of the electron beams, d. each of said phase shift electrode means having electrodes located on opposite sides of the associated electron beam for controlling the velocity of each of the beams therethrough to thereby create said predetermined relative phase shifts in the signals in each of said channels, and e. a plurality of individual spaced apart semiconductor target devices, each one of which is associated with an electron beam and is located to receive said electron beam and to be modulated responsive to the deflection of said electron beam.
Claim 2
Dependent Claim
226 words
A phase array target amplifier apparatus for generating multiple channels of high frequency electromagnetic power from a single high frequency electromagnetic power signal, the signals in said channels having predetermined phase shifts relative to each other, said amplifier apparatus comprising: a. a plurality of spaced apart electron generating elements for generating a plurality of electron beams, b. individual spaced apart electrically energizable deflector means associated with each of said electron generating elements and located downstream with respeCt to the path of the electron beams for individually deflecting each of the electron beams in response to said single high frequency power signal, c. individual phase shift electrode means associated with each one of said electron generating elements and associated ones of said deflector means and being located downstream from said deflector means with respect to the path of the electron beams, d. each of said phase shift electrode means having electrodes located on opposite sides of the associated electron beam for controlling the velocity of each of the beams therethrough to thereby create said predetermined relative phase shifts in the signals in each of said channels, and e. a plurality of individual spaced apart semiconductor target devices, each one of which is associated with an electron beam and is located to receive said electron beam and to be modulated responsive to the deflection of said electron beam.
Claim 3
Dependent Claim
31 words
The phase array target amplifier apparatus of claim 1 further characterized in that each said semiconductor target device is an amplifier which amplifies a signal represented by the associated electron beam.
Claim 4
Dependent Claim
24 words
The phase array target amplifier apparatus of claim 1 further characterized in that each said electron generating element comprises a cathode operable electron gun.
Claim 5
Dependent Claim
52 words
The phase array target amplifier apparatus of claim 1 further characterized in that each said semiconductor target device comprises a pair of electron modulated semiconductor members, one of which is positively activated by the electron beam and the other of which is negatively actuated by the electron beam to provide AC modulation.
Claim 6
Dependent Claim
32 words
The phase array target amplifier apparatus of claim 1 further characterized in that all of said deflector means comprises a helically wound tubular electrode member with a center electrode member extending therethrough.
Claim 7
Dependent Claim
43 words
The phase array target amplifier apparatus of claim 1 further characterized in that all of said phase shift electrode means comprises a first tubular resistive member and a second resistive tubular member concentrically located within and spaced from said first tubular resistive member.
Claim 8
Dependent Claim
83 words
The phase array target amplifier apparatus of claim 1 further characterized in that all of said phase shift electrode means comprises a first tubular resistive member and a second resistive tubular member concentrically located within and spaced from said first tubular resistive member, said first and second tubular resistive members being connected so that a voltage drop is created about their annulus thereby creating a change in the velocity of the electron beams as a function of the annular position of these beams.
Claim 9
Independent Claim
165 words
A method for generating multiple channels of high frequency electromagnetic power with a phase array target amplifier, said method comprising: a. generating a plurality of spaced apart electron beams where each beam lies in a separate electron beam channel, b. individually and optionally deflection modulating the electron beams with a high frequency electromagnetic power signal by means of individual spaced apart electrically energizable deflector means located downstream with respect to the path of the electron beams, c. establishing an electron beam drift region between phase shift electrodes located on opposite sides of the associated electron beam for each electron beam channel, d. controlling the velocity of each of the beams through said drift regions, e. creating time delays in some of the electron beams with respect to the other of the beams, f. modulating said electron beams responsive to the initial deflection and drift time of said electron beams, g. amplifying the modulated electron beams by a plurality of individual spaced apart semiconductor target devices.
Claim 10
Independent Claim
165 words
A method for generating multiple channels of high frequency electromagnetic power with a phase array target amplifier, said method comprising: a. generating a plurality of spaced apart electron beams where each beam lies in a separate electron beam channel, b. individually and optionally deflection modulating the electron beams with a high frequency electromagnetic power signal by means of individual spaced apart electrically energizable deflector means located downstream with respect to the path of the electron beams, c. establishing an electron beam drift region between phase shift electrodes located on opposite sides of the associated electron beam for each electron beam channel, d. controlling the velocity of each of the beams through said drift regions, e. creating time delays in some of the electron beams with respect to the other of the beams, f. modulating said electron beams responsive to the initial deflection and drift time of said electron beams, g. amplifying the modulated electron beams by a plurality of individual spaced apart semiconductor target devices.
Claim 11
Dependent Claim
52 words
The method of generating multiple channels of high frequency electromagnetic power of claim 8 further characterized in that said method comprises positively actuating one of a paIr of electron modulated semiconductor members, and negatively actuating the other of the semiconductor members in the pair by the electron beam to provide AC modulation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |