US3916035A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epoxy-polymer electron beam resists
Assignee: Texas Instruments Inc
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Filing: 1973-11-05
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Granted: 1975-10-28
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Expires: 1993-11-05
Abstract
Abstract Disclosed is a method of making patterned negative electron beam resists by first mixing but not reacting an epoxy with a polymer. The epoxy-polymer mixture is then applied to a support in the form of a thin film. Upon irradiating a portion of the thin film with an electron beam according to a programmed pattern, the epoxy links with the polymer, thereby causing cross linkage of the polymer and making the irradiated portion insoluble in certain solvents. The remainder of the epoxy-polymer mixture is soluble in the solvent, thereby dissolving in the solvent and removed, resulting in the desired pattern of openings in the electron beam resist.
Inventors
- 👤 Terry L Brewer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:54
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
153 words
THE METHOD OF FORMING A PATTERNED NEGATIVE HIGH ENERGY BEAM RESIST, COMPRISING THE STEPS OF: A. FORMING A THIN FILM OF A MIXTURE OF A COMPOUND HAVING AN EPOXY GROUP, AND A POLYMER WHICH CROSSLINKS TO BECOME INSOLUBLE WHEN EXPOSED TO AN ELECTRON BEAM, SAID MIXTURE HAVING A RATIO OF EPOXY TO POLYMER BETWEEN 5% AND 30% BY WEIGHT, ON A SUPPOR. B. SCANNING SAID THIN FILM WITH A HIGH ENERGY BEAM IN A PREDETEMINED PATTERN AT A SPEED SUFFICIENT TO CAUSE THE IRRAIATED PORTION OF SAID EPOXY AND POLYMER MIXTURE TO CROSS LINK WHERE IRRADIATED BY SAID HIGH ENERGY BEAM, SAID EPOXY BECOMMING A PART OF THE POLYMER STRUCTURE, AND C. DISSOLVIG THE UNCROSS-LINKED PORTION OF SAID EPOXY AND POLYMER MITURE WITH A SOLVENT WHICH DISSOLVES AND REMOVES THE UNCROSS-INKED EPOXY AND POLYMER MIXTURE, THERBY LEAVING SAID CROSS LINKED PORTION OF SAID POXYPOLYMER ON SAID SUPPORT WITH OPENING IN A DESIRED PATTERN.
Claim 2
Independent Claim
153 words
THE METHOD OF FORMING A PATTERNED NEGATIVE HIGH ENERGY BEAM RESIST, COMPRISING THE STEPS OF: A. FORMING A THIN FILM OF A MIXTURE OF A COMPOUND HAVING AN EPOXY GROUP, AND A POLYMER WHICH CROSSLINKS TO BECOME INSOLUBLE WHEN EXPOSED TO AN ELECTRON BEAM, SAID MIXTURE HAVING A RATIO OF EPOXY TO POLYMER BETWEEN 5% AND 30% BY WEIGHT, ON A SUPPOR. B. SCANNING SAID THIN FILM WITH A HIGH ENERGY BEAM IN A PREDETEMINED PATTERN AT A SPEED SUFFICIENT TO CAUSE THE IRRAIATED PORTION OF SAID EPOXY AND POLYMER MIXTURE TO CROSS LINK WHERE IRRADIATED BY SAID HIGH ENERGY BEAM, SAID EPOXY BECOMMING A PART OF THE POLYMER STRUCTURE, AND C. DISSOLVIG THE UNCROSS-LINKED PORTION OF SAID EPOXY AND POLYMER MITURE WITH A SOLVENT WHICH DISSOLVES AND REMOVES THE UNCROSS-INKED EPOXY AND POLYMER MIXTURE, THERBY LEAVING SAID CROSS LINKED PORTION OF SAID POXYPOLYMER ON SAID SUPPORT WITH OPENING IN A DESIRED PATTERN.
Claim 3
Dependent Claim
21 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said polymer is polystyrene.
Claim 4
Dependent Claim
21 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said polymer is polystyrene-butadiene.
Claim 5
Dependent Claim
21 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said polymer is polydimethylsiloxane.
Claim 6
Dependent Claim
25 words
The method of forming a patterned negative high energy beam resist, as defined in claim 1, wherein said high energy beam is an electron beam.
Claim 7
Independent Claim
174 words
The method of forming a negative electron beam resist, comprising the steps of: a. mixing a compound having an epoxy group with a polymer which crosslinks to become insoluble when exposed to an electron beam, said mixture having a ratio of epoxy to polymer between 5% and 30% by weight; b. adding solvent to said mixture to form a solution; c. placing said solution on a support; d. drying said solution to remove said solvent, thereby leaving a thin epoxy and polymer film on said support; e. scanning said thin film with an electron beam in a predetermined pattern at a speed sufficient to cause the irradiated portion of said epoxy and polymer mixture to crosslink where irradiated by said electron beam, said epoxy becoming a part of the polymer structure; and, f. dissolving the uncross linked portion of said epoxy and polymer mixture with a solvent which removes the uncross linked epoxy and polymer mixture, thereby leaving said cross linked portion of said epoxy-polymer on said support with openings in a desired pattern.
Claim 8
Independent Claim
174 words
The method of forming a negative electron beam resist, comprising the steps of: a. mixing a compound having an epoxy group with a polymer which crosslinks to become insoluble when exposed to an electron beam, said mixture having a ratio of epoxy to polymer between 5% and 30% by weight; b. adding solvent to said mixture to form a solution; c. placing said solution on a support; d. drying said solution to remove said solvent, thereby leaving a thin epoxy and polymer film on said support; e. scanning said thin film with an electron beam in a predetermined pattern at a speed sufficient to cause the irradiated portion of said epoxy and polymer mixture to crosslink where irradiated by said electron beam, said epoxy becoming a part of the polymer structure; and, f. dissolving the uncross linked portion of said epoxy and polymer mixture with a solvent which removes the uncross linked epoxy and polymer mixture, thereby leaving said cross linked portion of said epoxy-polymer on said support with openings in a desired pattern.
Claim 9
Dependent Claim
19 words
The method of forming a negative electron beam resist, as defined in claim 6, wherein said polymer is polystyrene.
Claim 10
Dependent Claim
19 words
The method of forming a negative electron beam resist, as defined in claim 6, wherein said polymer is polystyrene-butadiene.
Claim 11
Dependent Claim
19 words
The method of forming a negative electron beam resist, as defined in claim 6, wherein said polymer is polydimethysiloxane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |