US3910801A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High velocity thermal migration method of making deep diodes
Assignee: General Electric Co
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Filing: 1973-10-30
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Granted: 1975-10-07
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Expires: 1993-10-30
Abstract
Abstract A number of semiconductor devices are simultaneously produced by thermally migrating aluminum droplets rapidly through an elongated, cylindrical, silicon crystal under the driving force of heat from a source relative to which the crystal is moved axially to provide a plurality of recrystallized regions extending through the crystal parallel to its axis. As the second step of the process, the crystal is cut transversely at a number of points along its length to provide a plurality of semiconductor devices which are counterparts of one another.
Inventors
- 👤 Harvey E Cline
- 👤 Thomas R Anthony
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:11
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; C; C30; C30B; C30B13/00; C30B13/02; C30B13/06; H10P54/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
119 words
THE THERMAL MIGRATION METHOD FOR SIMULTANEOUSLY PRODUCING A PLURALITY OF SEMICONDUCTOR BODIES WHICH COMPRISES THE STEPS OF PROVIDING A MONOCRYSTALLINE MATRIX BODY OF SEMICONDUCTOR MATERIAL HAVING SELECTED CONDUCTIVITY AND RESISTIVITY AND HAVING END SURFACE, AND A SIDE SURFACE, FORMING RECESSES OF DEPTH LESS THAN ABOUT 30 MICRONS IN ONE END SURFACE OF THE MATRIX BODY, SUBSTANTIALLY FILLING THE RECESSES WITH A SOLID, METALLIC MATERIAL OF DIFFERENT SELECTED CONDUCTIVITY AND RESISTIVITY WITH WHICH THE MATRIX BODY MATERIAL WILL FORM A LIQUID SOLUTION OF MELTING POINT TEMPERATURE BELOW THAT OF THE MATERIAL OF THE MATRIX BODY, HEATING THE MATRIX BODY AND THEREBY FORMING IN THE RECESSES LIQUID SOLUTIONS OF THE MATIX MATERIAL AND THE METALLIC MATERIAL, MIGRATING THE RESULTING DROPLET IN
Claim 2
Dependent Claim
119 words
THE THERMAL MIGRATION METHOD FOR SIMULTANEOUSLY PRODUCING A PLURALITY OF SEMICONDUCTOR BODIES WHICH COMPRISES THE STEPS OF PROVIDING A MONOCRYSTALLINE MATRIX BODY OF SEMICONDUCTOR MATERIAL HAVING SELECTED CONDUCTIVITY AND RESISTIVITY AND HAVING END SURFACE, AND A SIDE SURFACE, FORMING RECESSES OF DEPTH LESS THAN ABOUT 30 MICRONS IN ONE END SURFACE OF THE MATRIX BODY, SUBSTANTIALLY FILLING THE RECESSES WITH A SOLID, METALLIC MATERIAL OF DIFFERENT SELECTED CONDUCTIVITY AND RESISTIVITY WITH WHICH THE MATRIX BODY MATERIAL WILL FORM A LIQUID SOLUTION OF MELTING POINT TEMPERATURE BELOW THAT OF THE MATERIAL OF THE MATRIX BODY, HEATING THE MATRIX BODY AND THEREBY FORMING IN THE RECESSES LIQUID SOLUTIONS OF THE MATIX MATERIAL AND THE METALLIC MATERIAL, MIGRATING THE RESULTING DROPLET IN
Claim 3
Dependent Claim
54 words
The method of claim 1 in which the matrix body is an elongated, generally cylindrical crystal of silicon, the thermal gradient is about 50*C per centimeter and in which the migration paths of the droplets are marked by recrystallized regions extending in straight lines substantially parallel to the major axis of the matrix body.
Claim 4
Dependent Claim
18 words
The method of claim 2 in which the recrystallized region extends the full length of the matrix body.
Claim 5
Dependent Claim
21 words
The method of claim 1 in which the body is a silicon crystal and in which the metallic material is aluminum.
Claim 6
Dependent Claim
44 words
The method of claim 1 in which heating of the metallic material is accomplished by heating the matrix body at an intermediate location along its length and progressively moving the heating location along the matrix body in a direction away from its recessed end.
Claim 7
Dependent Claim
24 words
The method of claim 1 in which the matrix body is a crystal selected from the group consisting of gallium arsenide and gallium phosphide.
Claim 8
Dependent Claim
27 words
The method of claim 1 in which the sectioning step is carried out by scoring the matrix body and then fracturing the body along a cleavage plane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-06 | 1979-04-07 | 1979-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-06 | 1983-04-07 | 1983-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-06 | 1987-04-07 | 1987-10-07 | $7700.00 | Window Closed / Lapsed |