Patent US2695098A successfully refreshed from Google Patents.
US3907618A
Expired / Lapsed
US
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Process for doping semiconductor employing glass-ceramic dopant
Assignee: OI Glass Inc
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Filing: 1974-01-07
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Granted: 1975-09-23
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Expires: 1994-01-07
Abstract
Abstract Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B2O3 from a solid B2O3 source to the semiconductor, wherein the solid B2O3 source comprises a rigid, dimensionally stable, glassceramic body formed from certain alkaline earth aluminoborosilicate parent glass compositions. The glass-ceramic bodies contain up to 60 mole % of B2O3 and are dimensionally stable at doping temperatures of 1,050*C and higher.
Inventors
- 👤 James E Rapp
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:47
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; C03; C03C; C03C10/00; C03C10/0036; C03C3/00; C03C3/04; C03C3/062; C03C3/064; H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P32/19; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
81 words
IN THE PROCESS FOR DOPING A SEMICONDUCTOR WHEREIN A SEMICONDUCTOR AND A GLASS-CERAMIC DOPANT HOST FOR VAPOR PHASE TRANSPORT OF B2O3 ARE MAINTAINED IN VAPOR PHASE COMMUNICATION AT A TEMPERATURE AND FOR A TIME SUFFICENT TO FORM A ZONE OF P TYPE CONDUCTIVITY IN SAID SEMICONDUCTOR THE IMPROVEMENT COMPRISING A GLASS-CERAMIC HOST WHICH HAS BEEN FORMED BY THE IN-SITU THERMAL CRYSTALLIZATION OF A PARENT GLASS COMPOSITION CONTAINING LESS THAN ABOUT 0.5 MOLE % OF ALKALI METAL OXIDE AND CONSISTING ESSENTIALLY OF:
Claim 2
Dependent Claim
81 words
IN THE PROCESS FOR DOPING A SEMICONDUCTOR WHEREIN A SEMICONDUCTOR AND A GLASS-CERAMIC DOPANT HOST FOR VAPOR PHASE TRANSPORT OF B2O3 ARE MAINTAINED IN VAPOR PHASE COMMUNICATION AT A TEMPERATURE AND FOR A TIME SUFFICENT TO FORM A ZONE OF P TYPE CONDUCTIVITY IN SAID SEMICONDUCTOR THE IMPROVEMENT COMPRISING A GLASS-CERAMIC HOST WHICH HAS BEEN FORMED BY THE IN-SITU THERMAL CRYSTALLIZATION OF A PARENT GLASS COMPOSITION CONTAINING LESS THAN ABOUT 0.5 MOLE % OF ALKALI METAL OXIDE AND CONSISTING ESSENTIALLY OF:
Claim 3
Dependent Claim
13 words
The process of claim 1 wherein said glass-ceramic dopant host consists essentially of:
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said sEmiconductor is an N type silicon semiconductor.
Claim 5
Dependent Claim
27 words
The process of claim 3 wherein said silicon semiconductor is contacted with an atmosphere consisting essentially of B2O3 vapors and a carrier gas for said B2O3 vapors.
Claim 6
Dependent Claim
18 words
The process of claim 3 wherein said temperature is in the range of about 1,050*C to about 1,200*C.
Claim 7
Dependent Claim
33 words
The process of claim 3 wherein said semiconductor and said glass-ceramic dopant host are in the form of thin wafers said dopant wafers having a thickness in the range of about 15-50 mils.
Claim 8
Dependent Claim
34 words
The process of claim 6 wherein a plurality of semiconductor wafers and a plurality of glass-ceramic dopant wafers are alternately positioned with the planar wafer surfaces being substantially parallel and in spaced, confronting relationship.
References Cited (Backward Citations)
US3022179A
Cited
US3117881A
Cited
US3346428A
Cited
US3374125A
Cited
US3540895A
Cited
US3530016A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-22 | 1979-03-24 | 1979-09-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-22 | 1983-03-24 | 1983-09-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-22 | 1987-03-24 | 1987-09-23 | $7700.00 | Window Closed / Lapsed |