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US3906296A
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Stored charge transistor
Assignee: National Aeronautics and Space Administration
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Filing: 1971-08-25
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Granted: 1975-09-16
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Expires: 1991-08-25
Abstract
Abstract A stored charge device of the general type designated as an MNOS field-effect transistor, has its operation improved by embedding a thin metal layer between two insulating films used in the transistor. The embedded metal layer technique is also used to provide a two-terminal thin-film stored charge device, consisting of a ''''metal-insulator-embedded metal-insulator-metal,'''' sandwich structure which can be used in high-density memory arrays.
Inventors
- 👤 Joseph Maserjian
- 👤 George W Lewicki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:35
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; H; H03; H03K; H03K3/00; H03K3/02; H03K3/353; H03K3/356; H03K3/356008; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685; H10D86/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
127 words
A charge-storage device comprising a substrate having a first continuous insulating layer deposited or grown thereon, said first insulating layer having one area thereof which is thinner than the remainder of the area of said first insulating layer, a conducting layer deposited over both thin and thick areas of said first insulating layer, a second insulating layer deposited over and completely covering said conducting layer, and electrode means coupled to said storage charge device for applying charge thereto and for deriving charge therefrom, said electrode means constituting a plurality of spaced metallic depositions on said second insulating layer which is over a portion of said conducting layer, the area of each metallic deposition having a different size than the area of the others for establishing different capacitances.
Claim 2
Dependent Claim
127 words
A charge-storage device comprising a substrate having a first continuous insulating layer deposited or grown thereon, said first insulating layer having one area thereof which is thinner than the remainder of the area of said first insulating layer, a conducting layer deposited over both thin and thick areas of said first insulating layer, a second insulating layer deposited over and completely covering said conducting layer, and electrode means coupled to said storage charge device for applying charge thereto and for deriving charge therefrom, said electrode means constituting a plurality of spaced metallic depositions on said second insulating layer which is over a portion of said conducting layer, the area of each metallic deposition having a different size than the area of the others for establishing different capacitances.
Claim 3
Dependent Claim
117 words
A charge-storage device comprising a substrate having a first continuous insulating layer deposited or grown thereon, said first insulating layer having one area thereof which is thinner than the remainder of the area of said first insulating layer, a conducting layer deposited over both thin and thick areas of said first insulating layer, A second insulating layer deposited over and completely covering said conducting layer, and electrode means including first, second and third spaced metallic depositions on said second insulating layer for applying charge thereto and for deriving charge therefrom, said second metallic deposition having a larger area than said first metallic deposition, and said third metallic deposition having a larger area than said second metallic deposition.
Claim 4
Dependent Claim
117 words
A charge-storage device comprising a substrate having a first continuous insulating layer deposited or grown thereon, said first insulating layer having one area thereof which is thinner than the remainder of the area of said first insulating layer, a conducting layer deposited over both thin and thick areas of said first insulating layer, A second insulating layer deposited over and completely covering said conducting layer, and electrode means including first, second and third spaced metallic depositions on said second insulating layer for applying charge thereto and for deriving charge therefrom, said second metallic deposition having a larger area than said first metallic deposition, and said third metallic deposition having a larger area than said second metallic deposition.
Claim 5
Dependent Claim
29 words
A charge-storage device as recited in claim 2 wherein said first, second and third spaced metallic depositions are all positioned over a thicker region of said first insulating layer.
Claim 6
Dependent Claim
54 words
A charge-storage device as recited in claim 2 wherein there is included means for applying a potential between said first and second metallic depositions with a polarity for charging said charged storage device, and means for applying a voltage between said second and third metallic depositions with a polarity for discharging said storage device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-15 | 1979-03-17 | 1979-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-15 | 1983-03-17 | 1983-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-15 | 1987-03-17 | 1987-09-16 | $7700.00 | Window Closed / Lapsed |