US3903591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor arrangement
Assignee: Siemens AG
•
Filing: 1973-10-05
•
Granted: 1975-09-09
•
Expires: 1993-10-05
Abstract
Abstract A semiconductor arrangement has an insulating protective layer composed of two sub-layers with a contacting window in the insulating layer, the outer sub-layer consisting, e.g. of Si3N4 in the contact window is conducted over the edge of the inner sub-layer consisting of SiO2, up to the semiconductor surface within the window, so that the SiO2 layer is screened from the contacting electrode and the alien ions (Na-ions) usually contained therein.
Inventors
- 👤 Wolfgang Wenzig
- 👤 Werner Spaeth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P95/00; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
147 words
A PROCESS FOR THE PRODUCTION OF A PLURALITY OF IDENTICAL SEMICONDUCTOR COMPONENTS IN A SINGLE SEMICONDUCTOR WAFER, COMPRISING THE STEPS OF: APPLYING A LAYER OF SI02 ON A SURFACE OF THE WAFER, THE LAYER OF SI02 BRCOMING A SUB-LAYER OF AN INSULATING PROTECTIVE LAYER FOR EACH INDIVIDUAL SEMICONDUCTOR COMPONENT, FORMING A PLURALITY OF CONTACT WINDOWS IN THE SI02 LAYER AND A FRAME-SHAPED AUXILIARY WINDOW SURROUNDING EACH CONTACT WINDOW, DIFFUSING P-N JUNCTIONS INTO THE SEMICONDUCTOR WAFER THROUGH THE CONTACT WINDOWS IN THE DIFFUSION MASK BEING DIMENSIONED AND SPACED SUCH THAT NONE OF THE P-N JUNCTIONS OPENS INTO THE PARTS OF THE SEMICONDUCTOR SURFACE WHICH ARE EXPOSED IN THE AXUALIARY WINDOWS, COVERING THE SI02 SUB-LAYER INCLUDING THE SIDE EDGES WHICH FORM SAID CONTACT AND AUXILIARY WINDOWS WITH A CONTINUOUS OUTER SUBLAYER OF AN INSULATING PROTECTIVE LAYER CONSISTING OF AN INSULATING MATERIAL SELECTED FROM THE GROUP CONSISTING OF SI3N4, BEO,
Claim 2
Dependent Claim
147 words
A PROCESS FOR THE PRODUCTION OF A PLURALITY OF IDENTICAL SEMICONDUCTOR COMPONENTS IN A SINGLE SEMICONDUCTOR WAFER, COMPRISING THE STEPS OF: APPLYING A LAYER OF SI02 ON A SURFACE OF THE WAFER, THE LAYER OF SI02 BRCOMING A SUB-LAYER OF AN INSULATING PROTECTIVE LAYER FOR EACH INDIVIDUAL SEMICONDUCTOR COMPONENT, FORMING A PLURALITY OF CONTACT WINDOWS IN THE SI02 LAYER AND A FRAME-SHAPED AUXILIARY WINDOW SURROUNDING EACH CONTACT WINDOW, DIFFUSING P-N JUNCTIONS INTO THE SEMICONDUCTOR WAFER THROUGH THE CONTACT WINDOWS IN THE DIFFUSION MASK BEING DIMENSIONED AND SPACED SUCH THAT NONE OF THE P-N JUNCTIONS OPENS INTO THE PARTS OF THE SEMICONDUCTOR SURFACE WHICH ARE EXPOSED IN THE AXUALIARY WINDOWS, COVERING THE SI02 SUB-LAYER INCLUDING THE SIDE EDGES WHICH FORM SAID CONTACT AND AUXILIARY WINDOWS WITH A CONTINUOUS OUTER SUBLAYER OF AN INSULATING PROTECTIVE LAYER CONSISTING OF AN INSULATING MATERIAL SELECTED FROM THE GROUP CONSISTING OF SI3N4, BEO,
Claim 3
Dependent Claim
20 words
The process according to claim 1 wherein the step of etching the auxiliary windows occurs prior to the diffusion step.
Claim 4
Dependent Claim
45 words
The method according to claim 1, wherein the step of separating the individual semiconductor components from each other is further detailed by the steps of engraving lines in the semiconductor arrangement within the areas between adjacent auxiliary windows and breaking the arrangement along these lines.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-09-08 | 1979-03-10 | 1979-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-09-08 | 1983-03-10 | 1983-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-09-08 | 1987-03-10 | 1987-09-09 | $7700.00 | Window Closed / Lapsed |