US3900736A
Expired / Lapsed
US
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Method and apparatus for positioning a beam of charged particles
Assignee: International Business Machines Corp
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Filing: 1974-01-28
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Granted: 1975-08-19
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Expires: 1994-01-28
Abstract
Abstract A beam of charged particles is stepped from one predetermined position to another to form a desired pattern on a semiconductor wafer to which the beam is applied in accordance with a predetermined pattern. Instead of the beam being stepped to each of the predetermined positions, there is a dynamic correction for the deviation of the actual position from its predetermined position so that the beam is applied to the deviated position rather than the predetermined position whereby the pattern is written within the boundaries of the writing field as determined by the location of four registration marks, which are in four separate positions or points in the field. Through location of each of the four registration marks, the writing field is precisely defined. Writing fields may be interconnected by the sharing of registration marks enabling the construction of chips which are larger than a single writing field.
Inventors
- 👤 Michel S Michail
- 👤 Ollie C Woodard
- 👤 Hannon S Yourke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:46
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/04; H01J37/147; H01J37/30; H01J37/304; H01J37/3045
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
178 words
A method of positioning a beam of charged particles comprising: ascertaining the actual location and shape of a four-sided area of a target in which the beam is to be applied relative to the location and shape of a design four-sided areA; directing the beam over the target after ascertaining the actual location of the area of the target and its shape relative to the location and shape of the design area; and moving the beam in a predetermined path ot each of a plurality of predetermined positions within the design area in accordance with a predetermined pattern while dynamically electronically compensating at each of the predetermined positions for the deviation of the actual position within the actual area from the predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be shifted from the predetermined position and applied at the deviated actual position so that a pattern is written within the actual area in accordance with the predetermined pattern.
Claim 2
Independent Claim
178 words
A method of positioning a beam of charged particles comprising: ascertaining the actual location and shape of a four-sided area of a target in which the beam is to be applied relative to the location and shape of a design four-sided areA; directing the beam over the target after ascertaining the actual location of the area of the target and its shape relative to the location and shape of the design area; and moving the beam in a predetermined path ot each of a plurality of predetermined positions within the design area in accordance with a predetermined pattern while dynamically electronically compensating at each of the predetermined positions for the deviation of the actual position within the actual area from the predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be shifted from the predetermined position and applied at the deviated actual position so that a pattern is written within the actual area in accordance with the predetermined pattern.
Claim 3
Dependent Claim
36 words
The method according to claim 1 in which compensation at each of the predetermined positions for the deviation of the actual position from the predetermined position is obtained by simultaneously deflecting the beam in orthogonal directions.
Claim 4
Dependent Claim
37 words
The method according to claim 2 in which the location and shape of the area of the target is ascertained by scanning each of the four corners of the area of the target separately with the beam.
Claim 5
Dependent Claim
14 words
The method according to claim 3 in which the target is a semiconductor wafer.
Claim 6
Dependent Claim
116 words
The method according to claim 2 in which: the beam is moved in the predetermined path by simultaneously deflecting the beam is orthogonal directions through the use of a separate deflection voltage for each of the orthogonal directions; and obtaining the dynamic electronic compensation at each of the predetermined positions for the deviation of the actual position from the predetermined position by modifying the orthogonal deflection voltages for deflecting the beam to the predetermined position in each of the orthogonal directions in accordance with the location and shape of the actual area relative to the location and shape of the design area to obtain the compensating deflection of the beam in each of the orthogonal directions.
Claim 7
Dependent Claim
37 words
The method according to claim 1 in which the location and shape of the area of the target is ascertained by scanning each of the four corners of the area of the target separately with the beam.
Claim 8
Dependent Claim
14 words
The method according to claim 6 in which the target is a semiconductor wafer.
Claim 9
Dependent Claim
14 words
The method according to claim 1 in which the target is a semiconductor wafer.
Claim 10
Dependent Claim
153 words
The method according to claim 8 including: writing a different predetermined pattern at different levels of the wafer at different times through directing the beam over the design area after each level of the wafer is formed; and moving the beam in a predetermined path to each of a plurality of predetermined positions within the design area in accordance with the predetermined pattern at each of the levels while dynamically electronically compensating at each of the predetermined positions for the deviation of the actual position within the actual area from the predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be shifted from the predetermined position and applied at the deviated actual position so that a pattern is written within the actual area in accordance with the predetermined pattern at each of the levels.
Claim 11
Independent Claim
189 words
A method of writing a continuous pattern in more than one contiguous four-sided area of a target with a beam of charged particles including: ascertaining the actual location and shape of a first foursided area of the target relative to the location and shape of a first design four-sided area; applying the beam to the first actual area to write the portion of the continuous pattern therein in accordance with the actual location and shape of the first actual area relative to the location and shape of the first design area; ascertaining the actual location and shape of a second foursided area of the target having a boundary common with the first actual area of the target relative to the location and shape of a second design four-sided area; and applying the beam to the second actual area to write the portion of the continuous pattern therein in accordance with the actual location and shape of the second actual area relative to the location and shape of the second design area so that the pattern forms a continuation across the common boundary between the first and second actual areas.
Claim 12
Independent Claim
189 words
A method of writing a continuous pattern in more than one contiguous four-sided area of a target with a beam of charged particles including: ascertaining the actual location and shape of a first foursided area of the target relative to the location and shape of a first design four-sided area; applying the beam to the first actual area to write the portion of the continuous pattern therein in accordance with the actual location and shape of the first actual area relative to the location and shape of the first design area; ascertaining the actual location and shape of a second foursided area of the target having a boundary common with the first actual area of the target relative to the location and shape of a second design four-sided area; and applying the beam to the second actual area to write the portion of the continuous pattern therein in accordance with the actual location and shape of the second actual area relative to the location and shape of the second design area so that the pattern forms a continuation across the common boundary between the first and second actual areas.
Claim 13
Dependent Claim
38 words
The method according to claim 10 in which the location and shape of each of the areas of the target is ascertained by scanning each of the four corners of the area of the target with the beam.
Claim 14
Dependent Claim
14 words
The method according to claim 11 in which the target is a semiconductor wafer.
Claim 15
Dependent Claim
14 words
The method according to claim 10 in which the target is a semiconductor wafer.
Claim 16
Dependent Claim
36 words
The method according to claim 13 including applying the beam to each of the first and second actual areas after formation of another level of the wafer to form another continuous pattern at the another level.
Claim 17
Independent Claim
158 words
An apparatus for controlling the movement of a beam of charged particles comprising: means to ascertain the actual location and shape of an area of a target relative to the location and shape of a design area of the target; means to move the beam over the design area in a predetermined path to each of a plurality of predetermined positions within the design area in accordance with a predetermined pattern; and means to shift the beam from the predetermined position within the design area in accordance with the deviation of the actual position within the actual area from the corresponding predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be applied at the actual position rather than the corresponding predetermined position when the beam is moved by said beam moving means for positioning at the corresponding predetermined position.
Claim 18
Independent Claim
158 words
An apparatus for controlling the movement of a beam of charged particles comprising: means to ascertain the actual location and shape of an area of a target relative to the location and shape of a design area of the target; means to move the beam over the design area in a predetermined path to each of a plurality of predetermined positions within the design area in accordance with a predetermined pattern; and means to shift the beam from the predetermined position within the design area in accordance with the deviation of the actual position within the actual area from the corresponding predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be applied at the actual position rather than the corresponding predetermined position when the beam is moved by said beam moving means for positioning at the corresponding predetermined position.
Claim 19
Dependent Claim
60 words
The apparatus according to claim 15 in which: said shifting means includes: means to produce a signal in accordance with the deviation of each of the actual positions from the corresponding predetermined position; means to deflect the beam from the predetermined position to the actual position; and means to supply the signal from said producing means to said deflection means.
Claim 20
Dependent Claim
70 words
The apparatus according to claim 16 in which: said producing means includes: first means to produce a first signal in accordance with the deviation of the actual position from the corresponding predetermined position in a first direction; and second means to produce a second signal in accordance with the deviation of the actual position from the corresponding predetermined position in a second direction that is perpendicular to the first direction.
Claim 21
Dependent Claim
85 words
The apparatus according to claim 17 in which: said first means of said producing means produces the first signal dependent on the deflection signals supplied to said beam moving means to move the beam in each of the first and second directions to the predetermined position; and said second means of said producing means produces the second signal dependent on the deflection signals supplied to said beam moving means to move the beam in each of the first and second directions to the predetermined position.
Claim 22
Dependent Claim
134 words
The apparatus according to claim 15 including: means to store information containing each of a plurality of patterns for different levels of a semiconductor wafer forming the design area; said beam moving means moving the beam to a plurality of predetermined positions within the design area at each of the different levels of the wafer in accordance with the pattern for the particular level after each level is formed; said storing means supplying the stored information to said beam moving means for the plurality oF predetermined positions within the design area to which the beam is to be moved in accordance with the pattern for the particular level; and said shifting means shifting the beam to each of the actual positions within the actual area from the corresponding predetermined position within the design area.
Claim 23
Dependent Claim
18 words
The apparatus according to claim 15 in which said shifting means is separate from said beam moving means.
Claim 24
Dependent Claim
18 words
The apparatus according to claim 15 in which said deflection means is separate from said beam moving means.
Claim 25
Independent Claim
318 words
An apparatus for writing a continuous pattern with a beam of charged particles in more than one contiguous four-sided area of a target including: means to move the beam over the target; first means to control said moving means to move the beam to ascertain the actual location and shape of a first four-sided area relative to the location and shape of a first design four-sided area; said first means including means to control said moving means to move the beam over the first design area in accordance with a predetermined pattern; second means to shift the beam from a predetermined position within the first design area in accordance with the predetermined pattern to its actual deviated position within the first actual area to write a portion of the pattern, as defined by the predetermined pattern, in the first actual area in accordance with the actual location and shape of the first actual area relative to the location and shape of the first design area; said first means controlling said moving means to move the beam to ascertain the actual location and shape of a second area relative to the location and shape of a second design area with the second actual area having a common boundary with the first actual area; said control means of said first means controlling said moving means to move the beam over the second design area in accordance with the predetermined pattern; and said second means shifting the beam from a predetermined position within the second design area to its actual deviated position with the second actual area to write a portion of the pattern within the second actual area in accordance with the actual location and shape of the second actual area relative to the location and shape of the second design area so that the pattern forms a continuation across the common boundary between the first and second actual areas.
Claim 26
Independent Claim
318 words
An apparatus for writing a continuous pattern with a beam of charged particles in more than one contiguous four-sided area of a target including: means to move the beam over the target; first means to control said moving means to move the beam to ascertain the actual location and shape of a first four-sided area relative to the location and shape of a first design four-sided area; said first means including means to control said moving means to move the beam over the first design area in accordance with a predetermined pattern; second means to shift the beam from a predetermined position within the first design area in accordance with the predetermined pattern to its actual deviated position within the first actual area to write a portion of the pattern, as defined by the predetermined pattern, in the first actual area in accordance with the actual location and shape of the first actual area relative to the location and shape of the first design area; said first means controlling said moving means to move the beam to ascertain the actual location and shape of a second area relative to the location and shape of a second design area with the second actual area having a common boundary with the first actual area; said control means of said first means controlling said moving means to move the beam over the second design area in accordance with the predetermined pattern; and said second means shifting the beam from a predetermined position within the second design area to its actual deviated position with the second actual area to write a portion of the pattern within the second actual area in accordance with the actual location and shape of the second actual area relative to the location and shape of the second design area so that the pattern forms a continuation across the common boundary between the first and second actual areas.
Claim 27
Dependent Claim
14 words
The apparatus according to claim 22 in which the target is a semiconductor wafer.
Claim 28
Dependent Claim
71 words
The apparatus according to claim 22 in which said first means includes means to scan each of the four corners of each of the areas of the target to be located with the beam so as to ascertain the location and shape of each of the areas of the target to be located in accordance with the location of the four corners of the area of the target to be located.
Claim 29
Independent Claim
173 words
A method of positioning a beam of charged particles comprising: ascertaining the actual location and shape of an area of a target in which the beam is to be applied relative to the location and shape of a design area; directing the beam over the target after locating the actual area of the target and its shape relative to the location and shape of the design area; and moving the beam in a predetermined path to each of a plurality of predetermined positions within the design area in accordance with a predetermined pattern while dynamically electronically compensating at each of the predetermined positions for the deviation of the actual position within the actual area from the predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be shifted from the predetermined position and applied at the deviated actual position so that a pattern is written within the actual area in accordance with the predetermined pattern.
Claim 30
Independent Claim
173 words
A method of positioning a beam of charged particles comprising: ascertaining the actual location and shape of an area of a target in which the beam is to be applied relative to the location and shape of a design area; directing the beam over the target after locating the actual area of the target and its shape relative to the location and shape of the design area; and moving the beam in a predetermined path to each of a plurality of predetermined positions within the design area in accordance with a predetermined pattern while dynamically electronically compensating at each of the predetermined positions for the deviation of the actual position within the actual area from the predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be shifted from the predetermined position and applied at the deviated actual position so that a pattern is written within the actual area in accordance with the predetermined pattern.
Claim 31
Dependent Claim
36 words
The method according to claim 25 in which compensation at each of the predetermined positIons for the deviation of the actual position from the predetermined position is obtained by simultaneously deflecting the beam in orthogonal directions.
Claim 32
Dependent Claim
153 words
The method according to claim 25 including: writing a different predetermined pattern at different levels of the wafer at different times through directing the beam over the design area after each level of the wafer is formed; and moving the beam in a predetermined path to each of a plurality of predetermined positions within the design area in accordance with the predetermined pattern at each of the levels while dynamically electronically compensating at each of the predetermined positions for the deviation of the actual position within the actual area from the predetermined position due to the actual area having a different location and shape relative to the location and shape of the design area to cause the beam to be shifted from the predetermined position and applied at the deviated actual position so that a pattern is written within the actual area in accordance with the predetermined pattern at each of the levels.
References Cited (Backward Citations)
US3651303A
Cited
US3644700A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-18 | 1979-02-17 | 1979-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-18 | 1983-02-17 | 1983-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-18 | 1987-02-17 | 1987-08-19 | $7700.00 | Window Closed / Lapsed |