US3900432A
Expired / Lapsed
US
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Varistor compositions
Assignee: EIDP Inc
•
Filing: 1973-10-15
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Granted: 1975-08-19
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Expires: 1993-10-15
Abstract
Abstract Compositions, for producing thick film varistors on dielectric substrates, of inorganic powders dispersed in an inert liquid vehicle. The inorganic powders comprise doped iron oxides of the formula Fe2 xMxO3, wherein M is Ge or Ti and x is 0.0001-0.05, plus certain glass powders. Also the resultant thick film varistors.
Inventors
- 👤 Sanford Morton Marcus
- 👤 Frank Knowles Patterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:52
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/065; H01C17/06506; H01C17/06513; H01C17/06533; H01C7/00; H01C7/10; H01C7/105; H01C7/108
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
91 words
A COMPOSITION USEFUL FOR PRINTING A FILM ON A DIELECTRIC SUBSTRATE AND FIRING THE SAME TO FORM FILM VARISTORS, SAID COMPOSITION BEING OF FINELY DIVIDED INORGANIC MATERIAL DISPERSED IN AN INERT LIQUID VEHICLE, SAID INORGANIC MATERIAL COMPRISING, BY WEIGHT, A. 60-99% OF A CRYSTALLINE SEMICONDUCTIVE OXIDE OF THE FORMULA FE2-XMXO3, WHEREIN M IS ONE OR MORE OF GE AND TI AND X IN THE RANGE 0.0001-0.05, AND B. 1-40% OF A GLASS POWDER COMPRISING ONE OR MORE OF AT LEAST 10% PBO, AT LEAST 10% BI2O3 AND AT LEAST 25% CDO.
Claim 2
Dependent Claim
91 words
A COMPOSITION USEFUL FOR PRINTING A FILM ON A DIELECTRIC SUBSTRATE AND FIRING THE SAME TO FORM FILM VARISTORS, SAID COMPOSITION BEING OF FINELY DIVIDED INORGANIC MATERIAL DISPERSED IN AN INERT LIQUID VEHICLE, SAID INORGANIC MATERIAL COMPRISING, BY WEIGHT, A. 60-99% OF A CRYSTALLINE SEMICONDUCTIVE OXIDE OF THE FORMULA FE2-XMXO3, WHEREIN M IS ONE OR MORE OF GE AND TI AND X IN THE RANGE 0.0001-0.05, AND B. 1-40% OF A GLASS POWDER COMPRISING ONE OR MORE OF AT LEAST 10% PBO, AT LEAST 10% BI2O3 AND AT LEAST 25% CDO.
Claim 3
Dependent Claim
9 words
Compositions according to claim 1 where M is Ge.
Claim 4
Dependent Claim
9 words
Compositions according to claim 1 where M is Ti.
Claim 5
Dependent Claim
11 words
Compositions according to claim 1 comprising 70-95% (a) and 5-30% (b).
Claim 6
Dependent Claim
11 words
Compositions according to claim 2 comprising 70-95% (a) and 5-30% (b).
Claim 7
Dependent Claim
11 words
Compositions according to claim 3 comprising 70-95% (a) and 5-30% (b).
Claim 8
Dependent Claim
11 words
Compositions according to claim 1 comprising 80-95% (a) and 5-20% (b).
Claim 9
Dependent Claim
11 words
Compositions according to claim 2 comprising 80-95% (a) and 5-20% (b).
Claim 10
Dependent Claim
11 words
Compositions according to claim 3 comprising 80-95% (a) and 5-20% (b).
Claim 11
Dependent Claim
61 words
Compositions according to claim 1 comprising at least one additional free unreacted oxide selected from the class consisting of TiO2 and GeO2, wherein the total amount of TiO2 and/or GeO2 present in both the semiconductive oxide Fe2 xMxO3 and as free oxide is up to about 10% by weight of the total weight of semiconductive oxide and such free oxide present.
Claim 12
Dependent Claim
40 words
Compositions according to claim 2 comprising free GeO2 wherein the total GeO2 present in both the semiconductive oxide and as free oxide is up to about 10% by weight of the total weight of semiconductive oxide and free GeO2 present.
Claim 13
Dependent Claim
40 words
Compositions according to claim 3 comprising free TiO2 wherein the total TiO2 present in both the semiconductive oxide and as free oxide is up to about 10% by weight of the total weight of semiconductive oxide and free TiO2 present.
Claim 14
Dependent Claim
61 words
Compositions according to claim 4 comprising at least on additional free unreacted oxide selected from the class consisting of TiO2 and GeO2, wherein the total amount of TiO2 and/or GeO2 present in both the semiconductive oxide Fe2 xMxO3 and as free oxide is up to about 10% by weight of the total weight of semiconductive oxide and such free oxide present.
Claim 15
Dependent Claim
61 words
Compositions according to claim 7 comprising at least one additional free unreacted oxide selected from the class consisting of TiO2 and GeO2, wherein the total amount of TiO2 and/or GeO2 present in both the semiconductive oxide Fe2 xMxO3 and as free oxide is up to about 10% by weight of the total weight of semiconductive oxide and such free oxide present.
Claim 16
Dependent Claim
22 words
Compositions according to claim 1 wherein glass powder (b) comprises at least 40% of one or more of PbO, Bi2O3 and CdO.
Claim 17
Dependent Claim
22 words
Compositions according to claim 2 wherein glass powder (b) comprises at least 40% of one or more of PbO, Bi2O3 and CdO.
Claim 18
Dependent Claim
22 words
Compositions according to claim 3 wherein glass powder (b) comprises at least 40% of one or more of PbO, Bi2O3 and CdO.
Claim 19
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 1.
Claim 20
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 2.
Claim 21
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 3.
Claim 22
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 4.
Claim 23
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 7.
Claim 24
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 8.
Claim 25
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 9.
Claim 26
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 10.
Claim 27
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 11.
Claim 28
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 12.
Claim 29
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 13.
Claim 30
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 14.
Claim 31
Dependent Claim
13 words
Film varistors on a dielectric substrate of the inorganic material of claim 15.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-08-18 | 1979-02-17 | 1979-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-08-18 | 1983-02-17 | 1983-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-08-18 | 1987-02-17 | 1987-08-19 | $7700.00 | Window Closed / Lapsed |