← Back to Patent Explorer
US3899560A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of preparing transparent alumina

Assignee: Avco Corp
•
Filing: 1972-02-14
•
Granted: 1975-08-12
•
Expires: 1992-02-14
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract The invention is directed to a transparent alumina material and a method of preparing this material. The material is characterized as a dense primary recrystallized polycrystalline structure having a degree of preferred crystal orientation. The material is transparent to visible and infrared light and quantitative values are given. The transparent alumina covered by this invention is made by means of hot forging and an annealing process for powders or dense compacts of high-purity alumina.

Inventors

  • 👤 David J Sellers
  • 👤 William H Rhodes
  • 👤 Thomas Vasilos

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 20:30
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/10; C04B35/111; B; B01; B01J; B01J3/00; B01J3/06; B01J3/065

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 117 words
A PROCESS FOR PRODUCING TRANSPARENT POLYCRYSTALLINE ALUMINA HAVING A PRIMARY RECRYSTALLIZED GRAIN STRUCTURE WITH C AXIS ORIENTATION OF GRAINS PARALLEL TO THE DIRECTION OF PLASTIC DEFORMATION OF THE ALUMINA CRYSTALS COMPRISING: FORMING A COMPACT XONSISTING ESSENTIALLY OF SUBMICRON PARTICLES OF HIGH PURITY POLYCRYSTALLINE ALUMINA HAVING A PURITY IN EXCESS OF 99.90%: STABLIIZING THE COMPACT AT A TEMPERATURE IN THE REGION OF 1800*C TO 1900*C WITHOUT SUBSTANTIAL GRAIN GROWTH, HOT FORGING SAID COMPACT BY COMPRESSING WITHOUT LATERAL CONSTRAINTS AT A PRESSURE OF AT LEAST 3000 P. S. I. TO INTRODUCE INTO SAID COMPACT MATERIAL A STRAIN IN EXCESS OF THE CRITICAL STRAIN, AND ANNEALING SAID COMPACT UNDER PRESSURE FOR 70 MINUTES TO 6 HOURS TO INDUCE PRIMARY RECRYSTALLIZATION.
Claim 2
Dependent Claim 117 words
A PROCESS FOR PRODUCING TRANSPARENT POLYCRYSTALLINE ALUMINA HAVING A PRIMARY RECRYSTALLIZED GRAIN STRUCTURE WITH C AXIS ORIENTATION OF GRAINS PARALLEL TO THE DIRECTION OF PLASTIC DEFORMATION OF THE ALUMINA CRYSTALS COMPRISING: FORMING A COMPACT XONSISTING ESSENTIALLY OF SUBMICRON PARTICLES OF HIGH PURITY POLYCRYSTALLINE ALUMINA HAVING A PURITY IN EXCESS OF 99.90%: STABLIIZING THE COMPACT AT A TEMPERATURE IN THE REGION OF 1800*C TO 1900*C WITHOUT SUBSTANTIAL GRAIN GROWTH, HOT FORGING SAID COMPACT BY COMPRESSING WITHOUT LATERAL CONSTRAINTS AT A PRESSURE OF AT LEAST 3000 P. S. I. TO INTRODUCE INTO SAID COMPACT MATERIAL A STRAIN IN EXCESS OF THE CRITICAL STRAIN, AND ANNEALING SAID COMPACT UNDER PRESSURE FOR 70 MINUTES TO 6 HOURS TO INDUCE PRIMARY RECRYSTALLIZATION.
Claim 3
Dependent Claim 21 words
A method as described in claim 1 in which the aspect ratio of the dense compact is in excess of 0.03.
Claim 4
Dependent Claim 109 words
A process for producing transparent polycrystalline alumina having a primary recrystallized grain structure with C axis orientation of grains parallel to the direction of plastic deformation of the alumina crystals comprising: forming a compact consisting essentially of submicron particles of high purity polycrystalline alumina having a purity in excess of 99.90%; stabilizing the compact at a temperature in the region of 1800*C to 1900*C; hot forging said compact by compressing without lateral constraints in said temperature range to introduce into said compact material a strain in excess of the critical strain; and annealing said compact under pressure within said temperature range for inducing primary recrystallization of the compact material.
Claim 5
Dependent Claim 109 words
A process for producing transparent polycrystalline alumina having a primary recrystallized grain structure with C axis orientation of grains parallel to the direction of plastic deformation of the alumina crystals comprising: forming a compact consisting essentially of submicron particles of high purity polycrystalline alumina having a purity in excess of 99.90%; stabilizing the compact at a temperature in the region of 1800*C to 1900*C; hot forging said compact by compressing without lateral constraints in said temperature range to introduce into said compact material a strain in excess of the critical strain; and annealing said compact under pressure within said temperature range for inducing primary recrystallization of the compact material.
Claim 6
Dependent Claim 15 words
A method as described in claim 3 in which said compressive pressure exceeds 3000 p.s.i.
Claim 7
Dependent Claim 20 words
A method as described in claim 3 wherein the aspect ratio of the dense compact is in excess of 0.03.
Claim 8
Dependent Claim 21 words
A method as described in claim 3 in which said annealing is maintained for a minimum of 70 to 120 minutes.
Claim 9
Dependent Claim 28 words
A method as described in claim 3 in which the compact dimensions are altered by at least 5% to induce a strain in excess of the critical strain.

References Cited (Backward Citations)

US3346681A Cited
US3458927A Cited
US3383737A Cited
US3597512A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-08-11 1979-02-10 1979-08-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-08-11 1983-02-10 1983-08-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-08-11 1987-02-10 1987-08-12 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag