US3896478A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mesa type junction inverted and bonded to a heat sink
Assignee: Thales SA
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Filing: 1974-02-14
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Granted: 1975-07-22
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Expires: 1994-02-14
Abstract
Abstract A new mesa type junction inverted and bonded to a heat sink is provided. The ''''mesa'''' comprises a top face and flanks; the flanks are covered by a dielectric material grinded for obtaining an upper face in the plane of said top face; and at least a metallic layer is deposited upon said top face and bonded to said heat sink.
Inventors
- 👤 Raymond Henry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:23
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10D; H10D99/00; H10W40/00; H10W40/10; H10W74/00; H10W74/10; H10W74/131; H10W99/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/051; Y10S148/117
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
87 words
Semiconductor device comprising: one mesa type junction made upon a substrate, said junction having flank, and terminal having a top face, said flank being embedded by a dielectric material having an upper face in the same pLane of said top face, said semiconductor device further comprising at least a metallic layer having a first face being integral with said top face and a second face opposite to said first face, said second face being bonded to a heat sink so that said upper face forms a shoulder.
Claim 2
Dependent Claim
87 words
Semiconductor device comprising: one mesa type junction made upon a substrate, said junction having flank, and terminal having a top face, said flank being embedded by a dielectric material having an upper face in the same pLane of said top face, said semiconductor device further comprising at least a metallic layer having a first face being integral with said top face and a second face opposite to said first face, said second face being bonded to a heat sink so that said upper face forms a shoulder.
Claim 3
Dependent Claim
77 words
Semiconductor device according to claim 1 further comprising a metallic barrier layer deposited upon said top face and having a top surface, said upper face of said dielectric material being in the same plane of said top surface, said first face of said metallic layer being integral with said top surface, said second face being opposite to said top surface, said second face being bonded to a heat sink so that said upper face forms a shoulder.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-21 | 1979-01-20 | 1979-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-21 | 1983-01-20 | 1983-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-21 | 1987-01-20 | 1987-07-22 | $7700.00 | Window Closed / Lapsed |