US3892827A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for precipitating a layer of semiconductor material from a gaseous compound of said semiconductor material
Assignee: Siemens AG
•
Filing: 1969-10-29
•
Granted: 1975-07-01
•
Expires: 1989-10-29
Abstract
Abstract Process of producing a hollow semiconductor body, particularly of silicon, by precipitating through a reaction with a gaseous semiconductor compound on an electrically heated mandrel, the improvement comprising coating the mandrel with soot prior to precipitating the semiconductor material.
Inventors
- 👤 Wolfgang Keller
- 👤 Arno Kersting
- 👤 Konrad Reuschel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:41
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/01
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
89 words
METHOD OF PRODUCING A TUBLAR SILICON BODY WHEREIN THE OUTER SURFACE OF A HOLLOW CYLINDRICAL BODY IS TREATED WITH SOOT AND HEATED BY ELECTRIC CURRENT, IN A FLOWING REACTION GAS OF A SILICON HALOGEN COMPOUND (SIHCI3) AND HYDROGEN, TO A TEMPERATURE RANGING BETWEEN 1050*-1250*C UNTIL THE SILICON LAYER PRECIPITATED ON THE OUTER SURFACE OF THE CARRIER BODY ATTAINS THE WALL THICKNESS OF THE TUBE BEING PRODUCED, COOLING THE CARRIER AND THE SILICON BODY AND PULLING APART THE TUBULAR SILICON LAYER AND THE CARRIER BODY, WITHOUT DAMAGING SAID SILICON LAYER.
Claim 2
Dependent Claim
89 words
METHOD OF PRODUCING A TUBLAR SILICON BODY WHEREIN THE OUTER SURFACE OF A HOLLOW CYLINDRICAL BODY IS TREATED WITH SOOT AND HEATED BY ELECTRIC CURRENT, IN A FLOWING REACTION GAS OF A SILICON HALOGEN COMPOUND (SIHCI3) AND HYDROGEN, TO A TEMPERATURE RANGING BETWEEN 1050*-1250*C UNTIL THE SILICON LAYER PRECIPITATED ON THE OUTER SURFACE OF THE CARRIER BODY ATTAINS THE WALL THICKNESS OF THE TUBE BEING PRODUCED, COOLING THE CARRIER AND THE SILICON BODY AND PULLING APART THE TUBULAR SILICON LAYER AND THE CARRIER BODY, WITHOUT DAMAGING SAID SILICON LAYER.
References Cited (Backward Citations)
US2880117A
Cited
US2974388A
Cited
US3014791A
Cited
US3170859A
Cited
US3139363A
Cited
US3178308A
Cited
US3396220A
Cited
US3367826A
Cited
US3477885A
Cited
US3609829A
Cited
US3534131A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-30 | 1978-12-30 | 1979-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-30 | 1982-12-30 | 1983-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-30 | 1986-12-30 | 1987-07-01 | $7700.00 | Window Closed / Lapsed |