US3888674A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Automatic slice processing
Assignee: Texas Instruments Inc
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Filing: 1973-11-23
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Granted: 1975-06-10
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Expires: 1993-11-23
Abstract
Abstract In an electronic component manufacturing system, slices are transported in serial fashion between a plurality of work stations. As the slices move through the system, each work station performs a separate manufacturing operation on each slice. The manufacturing operations are performed in immediate succession and within the same time interval so that the slices are processed rapidly and so that slices do not accumulate between the work stations. The slices are maintained in sequence throughout the system so that the operation of the system is more easily controlled.
Inventors
- 👤 James L Nygaard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:54
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/06; H10P72/0612; H10P72/30; H10P72/32; H10P72/3208; H10P72/3216; H10P72/33; H10P72/3314
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
76 words
A METHOD OF SPRAYING A FLUID ON A SEMICONDUCTOR SLICE COMPRISING THE STEPS OF: A. POSITIONING A SEMICONDUCTOR SLIC TO SAID SPINDLE, B. SECURING SAID SEMICONDUCTOR SLICE TO SAID SPINDLE, C. LOWERING SAID SPINDLE INCLUDING SAID SECURED SEMICONDUCTOR SLICE INTO A CHAMBER, D. ROTATING SAID SPINDLE INCLUDING SAID SECURED SEMICONDUCTOR SLIC ONCE SAID SPINDLE HAS BEEN LOWERED INTO SAID CHAMBER, AND E. SPRAYING SAID FLUID ONTO SAID SEMICONDUCTOR SLICE WHILE IT IS ROTATING WITHIN SAID CHAMBER,
Claim 2
Independent Claim
76 words
A METHOD OF SPRAYING A FLUID ON A SEMICONDUCTOR SLICE COMPRISING THE STEPS OF: A. POSITIONING A SEMICONDUCTOR SLIC TO SAID SPINDLE, B. SECURING SAID SEMICONDUCTOR SLICE TO SAID SPINDLE, C. LOWERING SAID SPINDLE INCLUDING SAID SECURED SEMICONDUCTOR SLICE INTO A CHAMBER, D. ROTATING SAID SPINDLE INCLUDING SAID SECURED SEMICONDUCTOR SLIC ONCE SAID SPINDLE HAS BEEN LOWERED INTO SAID CHAMBER, AND E. SPRAYING SAID FLUID ONTO SAID SEMICONDUCTOR SLICE WHILE IT IS ROTATING WITHIN SAID CHAMBER,
Claim 3
Dependent Claim
426 words
IN A METHOD OF OPERATING AN ASSEMBLY LINE HAVING A PLURALITY OF WORK STATIONS FOR PROCESSING INDIVIDUAL SEMICONDUCTOR SSLICES, SAID SLICES EACH HAVING TWO MAJOR SURFACES, THE SEQUENCE OF STEPS OF: A. PROVIDING A PLURALITY OF SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A FIRST SPRAYING STATION, SURFACES, B. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALING A PREDETERMINED PATH TO A FIRST SPRAYING STATION, C. INDIVIDUALLY SPRAYING SAID SEMICONDUCTOR SLICES INCLUDING SAID OXIDE LAYER WITH A CLEANING SOLUTION WHILE INDIVIDUALLY ROTATING SAID SEMICONDUCTOR SLICES AT SAID FIRST SPRAY ING STATION, D. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A FIRST FLIPPING STATION, E. INDIVIDUALLY FLIPPING SAIS SEMICONDUCTOR SLICES SO THAT THE ORIENTATION OF SAID TWO MAJOR SURFACES IS REVERSED AT SAID FIRST FLIPPING STATION, F. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A SECOND SPRAYING STATION, G. INDIVIDUALLY SPRAYING A PHOTORESIST MATERIAL ON THE OTHER OF THE TWO MAHOR SURFACES OF SAID SEMICONDUCTOR SLICES WHILE ROTATING SAID SEMICONDUCTOR SLICES TO FORM A FIRST PHOTORESIST CONATING ON SAID SEMICONDUCTOR SLICES AT SAID SECOND SPRAYING STATION, H. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A FIRST HEATING STATION, I. INDIVIDUALLY HEATING SAID SEMICONDUCTOR SLICES TO CURE SAID FIRST PHOTORESIST COATING AT SAID FIRST HEATING STATION, J. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A SECOND FLIPPING STATION, K. INDIVIDALLY FLIPPING SAID SEMICONDUCTOR SLICES SO THAT THE ORIENTATION OF SAID TWO MAJOR SURFACES IS AGAIN REVERSED AT SAID SECOND FLIPPING STATION, L. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES TO A THIRD SPRAYING STATION, M. INDIVIDUALLY SPRAYING A PHOTORESIST MATERIAL IN THE OXIDE LAYER OF SAID SEMICONDUCTOR SLICES WHILE ROTATING SAID SEMICONDUCTOR SLICES TO FORM A SECOND PHOTORESIST COATING ON SAID SEMICONDUCTOR SLICES AT SAID THIRD SPRAYING STATION. N, INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A SECOND HEATING STATION, O, INDIVIDUALLY HEATING SAID SEMICONDUCTOR SLICES TO CURE SAID SECOND PHOTORESIST COATING AT SAID SECOND HEATING STATION, P. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO AN ALIGNING AND EXPOSING STATION, Q. PRECISELY ALIGNING SAID SECOND PHOTORESIST COATING WITH A PATTERNED MASK AND EXPOSING SAID SECOND PHOTORESIST COATING TO A LIGHT SOURCE THROUGH SUCH MASK AT SAID ALIGNING AND EXPOSING STATION, R. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALING A PREDETERMINED PATH TO A FOURTH SPRAYING STATION, AND INDIVIDUALLY SPRAYING A PHOTORESIST DEVELOPER ON SAID SECOND PHOTORESIST COATING WHILE INDIVIDUALLY ROTATING SAID SEMICONDUCTOR SLICES TO REMOVE THE PORTIONS OF THE SECOND PHOTORESIST COATING THAT WERE NOT EXPOSED TO THE LIGHT SOURCE AT SAID FOURTH SPRAYING STATION.
Claim 4
Dependent Claim
426 words
IN A METHOD OF OPERATING AN ASSEMBLY LINE HAVING A PLURALITY OF WORK STATIONS FOR PROCESSING INDIVIDUAL SEMICONDUCTOR SSLICES, SAID SLICES EACH HAVING TWO MAJOR SURFACES, THE SEQUENCE OF STEPS OF: A. PROVIDING A PLURALITY OF SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A FIRST SPRAYING STATION, SURFACES, B. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALING A PREDETERMINED PATH TO A FIRST SPRAYING STATION, C. INDIVIDUALLY SPRAYING SAID SEMICONDUCTOR SLICES INCLUDING SAID OXIDE LAYER WITH A CLEANING SOLUTION WHILE INDIVIDUALLY ROTATING SAID SEMICONDUCTOR SLICES AT SAID FIRST SPRAY ING STATION, D. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A FIRST FLIPPING STATION, E. INDIVIDUALLY FLIPPING SAIS SEMICONDUCTOR SLICES SO THAT THE ORIENTATION OF SAID TWO MAJOR SURFACES IS REVERSED AT SAID FIRST FLIPPING STATION, F. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A SECOND SPRAYING STATION, G. INDIVIDUALLY SPRAYING A PHOTORESIST MATERIAL ON THE OTHER OF THE TWO MAHOR SURFACES OF SAID SEMICONDUCTOR SLICES WHILE ROTATING SAID SEMICONDUCTOR SLICES TO FORM A FIRST PHOTORESIST CONATING ON SAID SEMICONDUCTOR SLICES AT SAID SECOND SPRAYING STATION, H. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A FIRST HEATING STATION, I. INDIVIDUALLY HEATING SAID SEMICONDUCTOR SLICES TO CURE SAID FIRST PHOTORESIST COATING AT SAID FIRST HEATING STATION, J. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A SECOND FLIPPING STATION, K. INDIVIDALLY FLIPPING SAID SEMICONDUCTOR SLICES SO THAT THE ORIENTATION OF SAID TWO MAJOR SURFACES IS AGAIN REVERSED AT SAID SECOND FLIPPING STATION, L. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES TO A THIRD SPRAYING STATION, M. INDIVIDUALLY SPRAYING A PHOTORESIST MATERIAL IN THE OXIDE LAYER OF SAID SEMICONDUCTOR SLICES WHILE ROTATING SAID SEMICONDUCTOR SLICES TO FORM A SECOND PHOTORESIST COATING ON SAID SEMICONDUCTOR SLICES AT SAID THIRD SPRAYING STATION. N, INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO A SECOND HEATING STATION, O, INDIVIDUALLY HEATING SAID SEMICONDUCTOR SLICES TO CURE SAID SECOND PHOTORESIST COATING AT SAID SECOND HEATING STATION, P. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALONG A PREDETERMINED PATH TO AN ALIGNING AND EXPOSING STATION, Q. PRECISELY ALIGNING SAID SECOND PHOTORESIST COATING WITH A PATTERNED MASK AND EXPOSING SAID SECOND PHOTORESIST COATING TO A LIGHT SOURCE THROUGH SUCH MASK AT SAID ALIGNING AND EXPOSING STATION, R. INDIVIDUALLY TRANSPORTING SAID SEMICONDUCTOR SLICES ALING A PREDETERMINED PATH TO A FOURTH SPRAYING STATION, AND INDIVIDUALLY SPRAYING A PHOTORESIST DEVELOPER ON SAID SECOND PHOTORESIST COATING WHILE INDIVIDUALLY ROTATING SAID SEMICONDUCTOR SLICES TO REMOVE THE PORTIONS OF THE SECOND PHOTORESIST COATING THAT WERE NOT EXPOSED TO THE LIGHT SOURCE AT SAID FOURTH SPRAYING STATION.
References Cited (Backward Citations)
US3695928A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-09 | 1978-12-09 | 1979-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-09 | 1982-12-09 | 1983-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-09 | 1986-12-09 | 1987-06-10 | $7700.00 | Window Closed / Lapsed |