US3887404A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: US Philips Corp
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Filing: 1973-01-23
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Granted: 1975-06-03
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Expires: 1993-01-23
Abstract
Abstract The manufacture of semiconductor devices in which the etching of recesses in semiconductor material of the III-V type is carried out in two steps with differently anisotropically reacting etchants. Semiconductor material may be deposited epitaxially in the recesses.
Inventors
- 👤 Jean-Paul Chane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:04
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646; H10P50/648; H10D; H10D62/00; H10D62/40; H10D62/405; H10P50/69; H10P50/691; H10P50/692; H10P50/693; H10P52/00; H10P52/40; H10P52/402; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/056; Y10S148/065; Y10S148/115
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
109 words
A METHOD OF PRODUCING A SEMICONDUCTOR DEVICE COMPRISING AT LEAST ONE RECESS, COMPRISING THE STEPS OF: A. PROVIDING A BODY COMPRISING A SURFACE PORTION THAT DEFINES A SUBSTANTIALLY FLAT SURFACE SAID SURFACE PORTION CONSISTING ESSENTIALLY OF A"'' BV MATERIAL; B. PROVIDING A MAST AT SAID SURFACE TO COVER A FIRST PORTION THEREOF; C. SELECTIVELY ETCHING ONLY A PART OF SAID SURFACE THAT IS UNCOVERED BY SAID MASK BY SUBJECTING SAID PART TO AN OXIDIZIND ETCHANT PASSED THROUGH AN OPENING IN SAID MASK; AND D. SELECTIVELY ETCHING SAID PART BY SEPARATELY SUBJECTING SAID PART OF SAID SURFACE PORTION TO A GASEOUS ACID ETCHANT PASSED THRUGH AN OPENING IN SAID MASK.
Claim 2
Independent Claim
109 words
A METHOD OF PRODUCING A SEMICONDUCTOR DEVICE COMPRISING AT LEAST ONE RECESS, COMPRISING THE STEPS OF: A. PROVIDING A BODY COMPRISING A SURFACE PORTION THAT DEFINES A SUBSTANTIALLY FLAT SURFACE SAID SURFACE PORTION CONSISTING ESSENTIALLY OF A"'' BV MATERIAL; B. PROVIDING A MAST AT SAID SURFACE TO COVER A FIRST PORTION THEREOF; C. SELECTIVELY ETCHING ONLY A PART OF SAID SURFACE THAT IS UNCOVERED BY SAID MASK BY SUBJECTING SAID PART TO AN OXIDIZIND ETCHANT PASSED THROUGH AN OPENING IN SAID MASK; AND D. SELECTIVELY ETCHING SAID PART BY SEPARATELY SUBJECTING SAID PART OF SAID SURFACE PORTION TO A GASEOUS ACID ETCHANT PASSED THRUGH AN OPENING IN SAID MASK.
Claim 3
Independent Claim
110 words
A method of producing a semiconductor device comprising at least one recess, comprising the steps of: a. Providing a body comprising a surface portion that defines a substantially flat surface, said surface portion consisting essentially of an AIII BV material; b. providing a mask at said surface to cover a first portion thereof; c. selectively etching only a part of said surface that is un-covered by said mask by subjecting said part to an oxidizing etchant passed through an opening in said mask; and d. selectively etching said part by separately subjecting said part of said surface portion to a gaseous acid etchant passed through an opening in said mask.
Claim 4
Independent Claim
110 words
A method of producing a semiconductor device comprising at least one recess, comprising the steps of: a. Providing a body comprising a surface portion that defines a substantially flat surface, said surface portion consisting essentially of an AIII BV material; b. providing a mask at said surface to cover a first portion thereof; c. selectively etching only a part of said surface that is un-covered by said mask by subjecting said part to an oxidizing etchant passed through an opening in said mask; and d. selectively etching said part by separately subjecting said part of said surface portion to a gaseous acid etchant passed through an opening in said mask.
Claim 5
Dependent Claim
34 words
A method as claimed in claim 1, wherein said step of exposing said part to said oxidizing etchant is carried out prior to said step of exposing said part to said gaseous acid etchant.
Claim 6
Dependent Claim
18 words
A method as claimed in claim 1, wherein the component of said material represented by A is gallium.
Claim 7
Dependent Claim
18 words
A method as claimed in claim 1, wherein the component of said material represented by B is arsenic.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein said oxidizing etchant comprises bromine in a liquid.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 5, wherein said oxidizing etchant is a mixture of an alkanol and bromine.
Claim 10
Dependent Claim
12 words
A method as claimed in claim 6, wherein said alkonol is methanol.
Claim 11
Dependent Claim
23 words
A method as claimed in claim 5, wherein the bromine is present in a concentration of about 3 to 5 percent by weight.
Claim 12
Dependent Claim
19 words
A method as claimed in claim 1, wherein said oxidizing etchant consists essentially of an alkaline hydrogen peroxide solution.
Claim 13
Dependent Claim
51 words
A method as claimed in claim 9, wherein said oxidizing etchant is a mixture containing 2 to 4 parts by volume of a 10 percent by weight solution of alkalihyroxide in water, 1 part by volume of hydrogen peroxide of 110 vol. and 0.8 - 1.2 parts by volume of water.
Claim 14
Dependent Claim
21 words
A method as claimed in claim 1, wherein said oxidizing etchant is essentially composed of sulfuric acid, hydrogen peroxide and water.
Claim 15
Dependent Claim
44 words
A method as claimed in claim 11, wherein said oxidizing etchant is a mixture containing 8 to 15 parts by volume of hydrogen peroxide of 110 vol. 1 part by volume of pure sulfuric acid and 0.8 - 1.2 parts by volume of water.
Claim 16
Dependent Claim
17 words
A method as claimed in claim 1, wherein said gaseous acid consists essentially of a hydrogen halide.
Claim 17
Dependent Claim
14 words
A method as claimed in claim 13, wherein said gaseous acid is hydrochloric acid.
Claim 18
Dependent Claim
22 words
A method as claimed in claim 1, wherein said step of etching with a gaseous acid is conducted at an elevated temperature.
Claim 19
Dependent Claim
17 words
A method as claimed in claim 1, wherein said surface is oriented substantially in the (001) plane.
Claim 20
Dependent Claim
23 words
A method as claimed in claim 16, wherein the orientation of said surface deviates between about 2* and 4* from the (001) plane.
Claim 21
Dependent Claim
26 words
A method as claimed in claim 16, wherein the orientation of said surface deviates from the (001) plane according to a rotation about a (110) axis.
Claim 22
Dependent Claim
25 words
A method as claimed in claim 16, wherein there are provided a plurality of recesses having respective rectilinear boundaries extending approximately in the (110) direction.
Claim 23
Dependent Claim
24 words
A method as claimed in claim 1, wherein there are provided a plurality of recesses respectively comprising boundaries extending approximately in the (110) direction.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-06-02 | 1978-12-02 | 1979-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-06-02 | 1982-12-02 | 1983-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-06-02 | 1986-12-02 | 1987-06-03 | $7700.00 | Window Closed / Lapsed |