US3886467A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency amplifier
Assignee: Sony Corp
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Filing: 1973-10-18
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Granted: 1975-05-27
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Expires: 1993-10-18
Abstract
Abstract A high frequency amplifier comprising an amplifying circuit, an emitter follower which makes the output impedance of the amplifying circuit low and an impedance matching network consisting of a coil and a condenser and connected between the amplifying circuit and the emitter follower, in which an operation voltage for the amplifying circuit is supplied thereto through a bias resistor for the emitter follower and a coil of the impedance matching network.
Inventors
- 👤 Seiichi Watanabe
- 👤 Takashi Yoshikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:02
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/189; H03F3/19; H03F3/191; H03D; H03D7/00; H03D7/12
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
171 words
A high frequency amplifier comprising: a. an amplifying circuit having an input terminal and an intermediate output terminal; b. a transistor having collector, emitter and base electrodes connected in the emitter follower configuration; c. a power supply terminal connected to the collector electrode of said transistor; d. a first resistor connected between said power supply terminal and the base electrode of said transistor; e. a second resistor connected between the emitter electrode of said transistor and a ground; f. an output terminal connected to the emitter electrode of said transistor; and g. an impedance matching circuit including a first condenser connected between said intermediate output terminal of said amplifying circuit and said ground and a coil connected between said intermediate output terminal of said amplifying circuit and the base electrode of said transistor, whereby said amplifying circuit and said transistor are connected to each other with proper impedance matching and an operation voltage for said amplifying circuit is supplied from said power supply terminal through said first resistor and said coil.
Claim 2
Dependent Claim
171 words
A high frequency amplifier comprising: a. an amplifying circuit having an input terminal and an intermediate output terminal; b. a transistor having collector, emitter and base electrodes connected in the emitter follower configuration; c. a power supply terminal connected to the collector electrode of said transistor; d. a first resistor connected between said power supply terminal and the base electrode of said transistor; e. a second resistor connected between the emitter electrode of said transistor and a ground; f. an output terminal connected to the emitter electrode of said transistor; and g. an impedance matching circuit including a first condenser connected between said intermediate output terminal of said amplifying circuit and said ground and a coil connected between said intermediate output terminal of said amplifying circuit and the base electrode of said transistor, whereby said amplifying circuit and said transistor are connected to each other with proper impedance matching and an operation voltage for said amplifying circuit is supplied from said power supply terminal through said first resistor and said coil.
Claim 3
Dependent Claim
25 words
A high frequency amplifier recited in claim 1 further comprising a third resistor connected between said emitter electrode of said transistor and said output terminal.
Claim 4
Dependent Claim
37 words
A high frequency amplifier recited in claim 2, wherein the resisTance value of said third resistor is selected approximately equal to an input impedance of a load circuit which is to be connected to said output terminal.
Claim 5
Dependent Claim
21 words
A high frequency amplifier recited in claim 2, wherein said amplifying circuit is a cascade amplifier comprising second and third transistors.
Claim 6
Dependent Claim
33 words
A high frequency amplifier recited in claim 4, wherein said emitter follower transistor and said second and third transistors are formed on a single semiconductor wafer in the form of an integrated circuit.
References Cited (Backward Citations)
US2811590A
Cited
US3483473A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-26 | 1978-11-25 | 1979-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-26 | 1982-11-25 | 1983-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-26 | 1986-11-25 | 1987-05-27 | $7700.00 | Window Closed / Lapsed |