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US3886370A Expired / Lapsed US ⏱️ 0.0 years remaining

Device for measuring semiconductor radiation sources

Assignee: Individual
•
Filing: 1973-11-21
•
Granted: 1975-05-27
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Expires: 1993-11-21
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Abstract

Abstract In a measuring device, the determination of the local dependence of the intensity and/or the delay time of the recombination radiation on the radiation band of a semiconductor radiation source is reduced to phase measuring so as to enable as short delays at 10 11 seconds to be determined. The measuring device comprises an excitation source for a semiconductor radiation source, a magnifying optical system which images the semiconductor radiation source on a diaphragm having a radiation receiver in its rear. A phasemeter connected to the excitation receiver on the one hand and to the radiation receiver on the other, compares the phase of the excitation signal to the phase of the received signal. The image of the semiconductor radiation source is displaceable relatively to the diaphragm and can be viewed through an observation system.

Inventors

  • 👤 Walter Schubert
  • 👤 Harry Wendt
  • 👤 Reiner Doss

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 05:40
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2656; G01S; G01S11/00; G01S11/12

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 166 words
A device for measuring the local dependence of the intensity and the delay time of the recombination radiation on the radiation band of a semiconductor radiation source, comprising a semiconductor radiation source having a radiation surface, an excitation source for exciting periodic radiation of said semiconductor radiation source, a radiation receiver for receiving said radiation and transforming the periodic radiation signals into electric signals, a magnifying optical system, a diaphragm being radiation transmissive, said system and said diaphragm being located between said semiconductor radiation source and said radiation receiver, said system being traversed by said radiation, which images said radiation surface on said diaphragm and has a common optical axis with said radiation surface, said diaphragm and said radiation receiver, means for producing relative motion between the image of said radiation surface and said diaphragm, and a phasemeter connected to said radiation receiver and said excitation source for comparison of the phase of the signal in said radiation receiver and the phase of the excitation signal.
Claim 2
Independent Claim 166 words
A device for measuring the local dependence of the intensity and the delay time of the recombination radiation on the radiation band of a semiconductor radiation source, comprising a semiconductor radiation source having a radiation surface, an excitation source for exciting periodic radiation of said semiconductor radiation source, a radiation receiver for receiving said radiation and transforming the periodic radiation signals into electric signals, a magnifying optical system, a diaphragm being radiation transmissive, said system and said diaphragm being located between said semiconductor radiation source and said radiation receiver, said system being traversed by said radiation, which images said radiation surface on said diaphragm and has a common optical axis with said radiation surface, said diaphragm and said radiation receiver, means for producing relative motion between the image of said radiation surface and said diaphragm, and a phasemeter connected to said radiation receiver and said excitation source for comparison of the phase of the signal in said radiation receiver and the phase of the excitation signal.
Claim 3
Dependent Claim 27 words
Device as claimed in claim 1, wherein frequency conversion means are connected with said radiation receiver and said phasemeter and with said excitation source and said phasemeter.
Claim 4
Dependent Claim 21 words
Device as claimed in claim 2, wherein said excitation source transmits a comparison phase to said phasemeter via said radiation source.
Claim 5
Dependent Claim 16 words
Device as claimed in claim 3, wherein said excitation source is a periodically modulated radiation source.
Claim 6
Dependent Claim 19 words
Device as claimed in claim 4, wherein said excitation source and said radiation source are integral with one another.
Claim 7
Dependent Claim 63 words
Device as claimed in claim 1, wherein an optical system for viewing the image of said radiation surface in the plane of said radiation transmissive diaphragm is located between said semiconductor radiation source and said radiation receiver, and wherein the optical axis of said magnifying optical system and the optical axis of said viewing system are substantially at right angles to one another.
Claim 8
Dependent Claim 16 words
Device as claimed in claim 1, wherein said semiconductor radiation source is enclosed by a cryostat.
Claim 9
Dependent Claim 21 words
Device as claimed in claim 1, having means for pulse amplitude modulation, said means being connected to said semiconductor radiation source.

References Cited (Backward Citations)

US3293438A Cited
US3290504A Cited
US3445668A Cited
US3728025A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-05-26 1978-11-25 1979-05-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-05-26 1982-11-25 1983-05-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-05-26 1986-11-25 1987-05-27 $7700.00 Window Closed / Lapsed

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