US3886002A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of obtaining a fused, doped contact between an electrode metal and a semi-conductor
Assignee: Individual
•
Filing: 1973-06-20
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Granted: 1975-05-27
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Expires: 1993-06-20
Abstract
Abstract A multilayered structure containing an electrode metal, doping agents and titanium is made on the surface of a semi-conductor. In order to form such a structure the surface of the semiconductor is directly coated with a layer of titanium on which an electrode metal layer is deposited. After that the layers of the doping agents and electrode metal are deposited in an alternating order. The structure thus obtained is heated to a temperature of the eutectic of ''''electrode metal - semi-conductor.'''' On the surface of the semi-conductor a melt is formed to contain the electrode metal and the doping agents. Since the oxides of the semi-conductor are reduced, a regular front of fusion of the electrode metal and diffusion of the doping agents into the semiconductor is thus provided.
Inventors
- 👤 Jury Stepanovich Akimov
- 👤 Auli Alexandrovich Galaev
- 👤 Semen Samuilovich Gorelik
- 👤 Boris Izrailevich Gofman
- 👤 Vyacheslav Dmitrievic Ermoshin
- 👤 Stanislav Konstaninovi Korovin
- 👤 Vladimir Vasilievich Naumov
- 👤 Konstantin And Preobrazhentsev
- 👤 Stanislav Vladislavovich Fronk
- 👤 Vadim Lvovich Shvartsman
- 👤 Vladimir Vasilievich Garshenin
- 👤 Oleg Fedorovich Stakhov
- 👤 Igor Ivanovich Kruglov
- 👤 Mark Markovich Samokhvalov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 01:17
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; H10P95/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
173 words
A METHOD OF PRODUCING A FUSED DOPED CONTACT BETWEEN AN ELECTRODE METAL SELECTED FROM THE GROUP CONSISTING OF SILVER, GOLD AND TIN AND A SEMIC-CONDUCTOR COMPRISING COATING THE SURFACE OF THE SEMI-CONDUCTOR ESSENTIALLY WITH A LAYER OF A TRANSITION METAL SELECTED FROM THE GROUP CONSISTING OF A TITANIUM, NIOBIUM AND ZIRCONIUM AT THE REDUCING TEMPERATURE OF THE SEMI-CONDICTOR OXIDE, COATING SAID LAYER WITH A LAER OF A THE ELECTRODE METAL AND THEN WITH ALTERMATING LAYERS OF A DOPINT AGENT AND THE ELECTRODE METAL WHEREBY A MULTILAYER STRUCTURE IS FORMED HAVING A DOPING AGENT LAYERS BETWEEN THE ELECTRODE METLA LAYERS, HEATING THE MULTILAYER STRUCTURE TO A TEMPERATURE NOT LESS THAN THE TEMPERATURE OF THE EUTICTIC OF "ELECTRODE METAL-SEMI-CONDUCTOR" FOR A TIME SUFFICIENT TO OBTAIN ON THE SURFACE OF THE SEMI-CONDUCTOR A MELT CONTAINING THE MATERIAL OF THE SEMI-CONDUCTOR, THE ELECTRODE METAL AND THE DOPING AGENTS AND TO PERMIT DIFFUSION OF THE DOPING AGENT FROM THE MELT INTO THE SEMI-CONDUCTOR TO FORM A P-N JUCTION, AND COOLING THE SEMI-CONDUCTOR TO OBTAIN A DOPED OHMIC CONTACT.
Claim 2
Independent Claim
173 words
A METHOD OF PRODUCING A FUSED DOPED CONTACT BETWEEN AN ELECTRODE METAL SELECTED FROM THE GROUP CONSISTING OF SILVER, GOLD AND TIN AND A SEMIC-CONDUCTOR COMPRISING COATING THE SURFACE OF THE SEMI-CONDUCTOR ESSENTIALLY WITH A LAYER OF A TRANSITION METAL SELECTED FROM THE GROUP CONSISTING OF A TITANIUM, NIOBIUM AND ZIRCONIUM AT THE REDUCING TEMPERATURE OF THE SEMI-CONDICTOR OXIDE, COATING SAID LAYER WITH A LAER OF A THE ELECTRODE METAL AND THEN WITH ALTERMATING LAYERS OF A DOPINT AGENT AND THE ELECTRODE METAL WHEREBY A MULTILAYER STRUCTURE IS FORMED HAVING A DOPING AGENT LAYERS BETWEEN THE ELECTRODE METLA LAYERS, HEATING THE MULTILAYER STRUCTURE TO A TEMPERATURE NOT LESS THAN THE TEMPERATURE OF THE EUTICTIC OF "ELECTRODE METAL-SEMI-CONDUCTOR" FOR A TIME SUFFICIENT TO OBTAIN ON THE SURFACE OF THE SEMI-CONDUCTOR A MELT CONTAINING THE MATERIAL OF THE SEMI-CONDUCTOR, THE ELECTRODE METAL AND THE DOPING AGENTS AND TO PERMIT DIFFUSION OF THE DOPING AGENT FROM THE MELT INTO THE SEMI-CONDUCTOR TO FORM A P-N JUCTION, AND COOLING THE SEMI-CONDUCTOR TO OBTAIN A DOPED OHMIC CONTACT.
Claim 3
Dependent Claim
29 words
A method as claimed in claim 1 wherein the total thickness of the electrode metal layers amounts to 95-99 per cent of the whole thickness of the multilayer structure.
Claim 4
Dependent Claim
23 words
A method as claimed in claim 1 wherein the materials forming the layers of the multilayer structure are deposited from the vapor phase.
Claim 5
Dependent Claim
13 words
A method as claimed in claim 1 wherein the electrode metal is silver.
Claim 6
Dependent Claim
13 words
A method as claimed in claim 1 wherein the electrode metal is gold.
Claim 7
Dependent Claim
13 words
A method as claimed in claim 1 wherein the electrode metal is tin.
Claim 8
Dependent Claim
13 words
A method as claimed in claim 1 wherein the transition metal is titanium.
Claim 9
Dependent Claim
13 words
A method as claimed in claim 1 wherein the transition metal is niobium.
Claim 10
Dependent Claim
13 words
A method as claimed in claim 1 wherein the transition metal is zirconium.
Claim 11
Dependent Claim
37 words
A method as claimed in claim 1 wherein the surface of the transition metal layer is coated with a layer of nickel having a thickness two to ten times as large as that of the transition metal.
Claim 12
Dependent Claim
16 words
A method as claimed in claim 10 wherein the nickel is deposited from the vapor phase.
Claim 13
Dependent Claim
23 words
A method as claimed in claim 11 wherein the electrode metal and the doping agents are deposited by the chemical or electrochemical technique.
Claim 14
Dependent Claim
12 words
The method as claimed in claim 1 wherein the semi-conductor is silicon.
References Cited (Backward Citations)
US2945285A
Cited
US3425880A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-26 | 1978-11-25 | 1979-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-26 | 1982-11-25 | 1983-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-26 | 1986-11-25 | 1987-05-27 | $7700.00 | Window Closed / Lapsed |