Filtering antisolar and heat insulating glass

Claim 2

FILTERING ANTISOLAR AND HEAT INSULATING GLASS, COMPRISING A SUPPORT INCLUDING AT LEAST ONE PANEL OF LIGHT-TRANSMITTING MATERIAL CAPABLE OF TRANSMITTING AT LEAST A PART OF THE SPECTRUM OF VISIBLE LIGHT, AND AT LEAST ONE COALESCENT LAYER OF FILTERING MATERIAL APPLIED TO AND ADHERING ON AT LEAST ONE FACE OF THE PANEL, SAID FILTERING MATERIAL COMPRISING AT LEAST ONE COMPOUND SELECTED FROM THE BORIDES, CARBIDES, NITRIDES, CARBONITRIDES AND SUBOXIDES OF AT LEAST ONE OF THE FOLLOWING METALS: TITANIUM, ZIRCONIUM, HAFNIUM, VANADIUM, NIOBIUM, TANTALUM, CHROMIUM, MOLYBDENUM AND TUNGSTEN, AND WHEREIN THE ELECTRIC RESISTANCE OF A SQUARE-SHAPED PART OF SAID LAYER OF FILTERIN MATERIAL, HAVING A THICKNESS OF BETWEEN 200 AND 1000 A, HAS AN ELECTRICAL RESISTANCE AT MOST EQUAL TO 200 OHMNS AT AMBIENT TEMPERATURES AND 400 OHMS AT -195*C.

Claim 3

Glass according to claim 1, wherein said compound is a nitride selected from the group consisting of TiN, ZrN, HfN, VN, NbN, TaN, CrN and Cr3N4.

Claim 4

Glass according to claim 1, wherein said compound is a carbide selected from the group consisting of ZrC, HfC, TaC and WC.

Claim 5

Glass according to claim 1, wherein said compound is a boride selected from the group consisting of Zr3B4, HfB, VB2, NbB2, TaB2 and TiB2.

Claim 6

Glass according to claim 1, wherein said compound is a suboxide selected from the group consisting of TiO, VO and NbO.

Claim 7

Glass according to claim 1, wherein at least a part of said compound is in the crystal form.

Claim 8

Glass according to claim 1, wherein said panel is composed of mineral glass.

Claim 9

Glass according to claim 1, wherein said panel comprises a glass absorbing at least a part of radiation having a wavelength between 0.7 and 2 micron.

Claim 10

Glass according to claim 1, wherein the layer of filtering material comprises a dispersion of said compound in a coalescent layer comprising at least one semiconductor having a high conduction electron density.

Claim 11

Glass according to claim 9, wherein said semiconductor is selected from the oxides SnO2, CdO, ZnO, SnO, In2O3 and Ga2O3 and the mixed oxides formed from at least two of said oxides.

Claim 12

Glass according to claim 1, further comprising means for heating by the Joule effect.

Claim 13

Glass according to claim 1, wherein said layer of filtering material comprises a continuous layer.

Claim 14

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmissive glass which is absorptive of at least a part of radiation having a wave length between 0.7 and 2 microns, said glass being a borosilicate glass containing at least one oxide selected from the group consisting of FeO, NiO and CoO; and at least one coalescent layer of filtering material applied to and adhering on at least one face of the panel said filtering material comprising at least one compound selected from the carbides, borides and carbonitrides of a metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten and wherein the electric resistance of a square-shaped part of said layer having a thickness of between 200 and 1000 A has an electrical resistance at most equal to 200 Ohms at ambient temperatures.

Claim 15

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmissive glass which is absorptive of at least a part of radiation having a wave length between 0.7 and 2 microns, said glass being a borosilicate glass containing at least one oxide selected from the group consisting of FeO, NiO and CoO; and at least one coalescent layer of filtering material applied to and adhering on at least one face of the panel said filtering material comprising at least one compound selected from the carbides, borides and carbonitrides of a metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten and wherein the electric resistance of a square-shaped part of said layer having a thickness of between 200 and 1000 A has an electrical resistance at most equal to 200 Ohms at ambient temperatures.

Claim 16

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmissive material transmissive of at least a part of the spectrum of visible light; at least one coalescent layer of filtering material applied to at least one face of the panel, said filtering material comprising at least one compound selected from the carbides, borides and carbonitrides of a metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten and wherein the electric resistance of a square-shaped part of saiD layer having a thickness of between 200 and 1000 A has an electrical resistance at most equal to 200 Ohms at ambient temperature; and a layer of additional filtering material absorptive of at least a part of radiation having a wave length between 0.7 and 2 micron.

Claim 17

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmissive material transmissive of at least a part of the spectrum of visible light; at least one coalescent layer of filtering material applied to at least one face of the panel, said filtering material comprising at least one compound selected from the carbides, borides and carbonitrides of a metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten and wherein the electric resistance of a square-shaped part of saiD layer having a thickness of between 200 and 1000 A has an electrical resistance at most equal to 200 Ohms at ambient temperature; and a layer of additional filtering material absorptive of at least a part of radiation having a wave length between 0.7 and 2 micron.

Claim 18

Glass acccording to claim 14, wherein said additional filtering material comprises at least one oxide selected from the group consisting of FeO, NiO and CoO.

Claim 19

Glass according to claim 14, wherein said additional filtering material comprises a semiconductor having a high conduction electron density.

Claim 20

Glass according to claim 16, wherein said semiconductor is selected from the oxides SnO2, CdO, ZnO, SnO, In2O3 and Ga2O3 and the mixed oxides formed from at least two of said oxides.

Claim 21

Glass according to claim 14, wherein the layer of additional filtering material covers the panel face not coated with the layer of filtering material having said electrical resistance of a square-shaped part at most equal to 200 Ohms at ambient temperature.

Claim 22

Glass according to claim 14, wherein the layer of additional filtering material is interposed between the face of the panel and the layer of filtering material having said electrical resistance of a square-shaped part at most equal to 200 Ohms at ambient temperature.

Claim 23

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmitting material transmissive of at least a part of the spectrum of visible light; and at least one coalescent layer of filtering material applied to and adhering on at least one face of the panel, said filtering material comprising at least one carbonitride selected from the group consisting of TiN0.7C 0.3 and NbN0.4C0.6 and wherein the electrical resistance of a square-shaped part of said layer having a thickness of between 200 and 1000 A has an electrical resistance at most equal to 200 Ohms at ambient temperature.

Claim 24

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmitting material transmissive of at least a part of the spectrum of visible light; and at least one coalescent layer of filtering material applied to and adhering on at least one face of the panel, said filtering material comprising at least one carbonitride selected from the group consisting of TiN0.7C 0.3 and NbN0.4C0.6 and wherein the electrical resistance of a square-shaped part of said layer having a thickness of between 200 and 1000 A has an electrical resistance at most equal to 200 Ohms at ambient temperature.

Claim 25

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmitting material transmissive of at least a part of the spectrum of visible light; and at least one coalescent layer of filtering material applied to and adhering on at least one face of the panel, said filtering material comprising at least one compound selected from the carbides, borides, and carbonitrides of a metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten and wherein the electric resistance of a square-shaped part of said layer of filtering material, having a thickness of between 200 and 1000 A, has an electrical resistance at most equal to 200 Ohms at ambient temperatures and 400 Ohms at - 195* C.

Claim 26

Filtering antisolar and heat insulating glass, comprising; a support including at least one panel of light-transmitting material transmissive of at least a part of the spectrum of visible light; and at least one coalescent layer of filtering material applied to and adhering on at least one face of the panel, said filtering material comprising at least one compound selected from the carbides, borides, and carbonitrides of a metal selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum and tungsten and wherein the electric resistance of a square-shaped part of said layer of filtering material, having a thickness of between 200 and 1000 A, has an electrical resistance at most equal to 200 Ohms at ambient temperatures and 400 Ohms at - 195* C.

Claim 27

Glass according to claim 21 wherein said compound is a carbide selected from the group consisting of ZrC, HfC, TaC and WC.

Claim 28

Glass according to claim 21 wherein said compound is a boride selected from the group consisting of Zr3B4, HfB, VB2, NbB2, TaB2 and TiB2.

Claim 29

Glass according to claim 21 wherein at least a part of said compound is in a crystal form.

Claim 30

Glass according to claim 21 wherein said panel is composed of mineral glass.

Claim 31

Glass according to claim 21 wherein said panel comprises a glass absorptive of at least a part of radiation having a wave length between 0.7 and 2 microns.

Claim 32

Glass according to claim 26 wherein said absorptive glass is a borosilicate glass containing at least one oxide selected from the group consisting of FeO, NiO and CoO.

Claim 33

Glass according to claim 21 having a layer of additional filtering material applied to the panel and absorptive of at least a part of radiation having a wavelength between 0.7 and 2 microns.

Claim 34

Glass according to claim 28 wherein said additional filtering material comprises at least one oxide selected from the group consisting of FeO, NiO and CoO.

Claim 35

Glass according to claim 28 wherein said additional filtering material comprises a semiconductor having a high conduction electron density.

Claim 36

Glass according to claim 30 wherein said semiconductor is selected from the oxides SnO2, CdO, ZnO, SnO, In2O3 and Ga2o3 and the mixed oxides formed from at least two of said oxides.

Claim 37

Glass according to claim 28 wherein the layer of additional filtering material covers a face of said panel not coated with said layer of filtering material comprising said compound said square-shaped part of which has said electric resistance at most equal 200 Ohms at ambient temperatures.

Claim 38

Glass according to claim 28 wherein the layer of additional filtering material is interposed between a face of said panel and said layer of filtering material comprising said compound said square-shaped part of which has said electric resistance of at most 200 Ohms at ambient temperatures.

Claim 39

Glass according to claim 21 wherein said layer of filtering material comprises a dispersion of said compound in a coalescent layer comprising at least one semiconductor having a high conduction electron density.

Claim 40

Glass according to claim 34 wherein said semiconductor is selected from the oxides SnO2, CdO, ZnO, SnO, In2O3 and Ga2O3 and the mixed oxides formed from at least two of said oxides.

Claim 41

Glass according to claim 21 further comprising means for heating said panel by the Joule effect.

Claim 42

Glass according to claim 21 wherein said layer of filtering material comprises a continuous layer.