US3883805A
Expired / Lapsed
US
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Determination of the susceptibility of semiconductor devices to thermal second breakdown
Assignee: United States Department of the Navy
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Filing: 1974-03-07
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Granted: 1975-05-13
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Expires: 1994-03-07
Abstract
Abstract A method for determining the susceptibility of semiconductor devices to damage from an Electro-Magnetic Pulse (EMP) due to induced thermal second breakdown. The method can be used as a non-destructive screening test. It is based on the increase in junction reverse breakdown voltage with temperature and can be used to find the most EMP resistant devices of a given device type.
Inventors
- 👤 Norman S Cohn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:53
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2632
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
105 words
A method of determining the susceptibility of a semiconductor device to thermal second breakdown comprising the steps of: measuring magnitudes of voltage rise factors for a set of preliminary test devices; measuring magnitudes of damage resistance factors for said set of preliminary test devices; measuring a magnitude of a voltage rise factor for said semiconductor device; comparing said magnitude of said voltage rise factor of said semiconductor device to said magnitudes of said set of preliminary test devices to select the damage resistance factor of said semiconductor device from corresponding magnitudes of said compared voltage rise factors thereby indicating the susceptibility of said semiconductor device.
Claim 2
Independent Claim
105 words
A method of determining the susceptibility of a semiconductor device to thermal second breakdown comprising the steps of: measuring magnitudes of voltage rise factors for a set of preliminary test devices; measuring magnitudes of damage resistance factors for said set of preliminary test devices; measuring a magnitude of a voltage rise factor for said semiconductor device; comparing said magnitude of said voltage rise factor of said semiconductor device to said magnitudes of said set of preliminary test devices to select the damage resistance factor of said semiconductor device from corresponding magnitudes of said compared voltage rise factors thereby indicating the susceptibility of said semiconductor device.
Claim 3
Dependent Claim
53 words
The method of claim 1 wherein said step of measuring the voltage rise factors for a set of preliminary test devices comprises the further steps of: applying a constant current pulse to said preliminary test devices; measuring the voltage rise of said preliminary test devices to the application of said constant current pulse.
Claim 4
Dependent Claim
59 words
The method of claim 1 wherein said step of measuring magnitudes of damage resistant factors for said set of preliminary test devices comprises the further steps of: subjecting said preliminary test devices to thermal second breakdown; measuring reverse breakdown voltage magnitudes for said preliminary test devices after said preliminary test devices have been subjected to said thermal second breakdown.
Claim 5
Dependent Claim
53 words
The method of claim 3 wherein said step of measuring the voltage rise factors for a set of preliminary test devices comprises the further steps of: applying a constant current pulse to said preliminary test devices; measuring the voltage rise of said preliminary test devices to the application of said constant current pulse.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-12 | 1978-11-11 | 1979-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-12 | 1982-11-11 | 1983-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-12 | 1986-11-11 | 1987-05-13 | $7700.00 | Window Closed / Lapsed |