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US3878482A Expired / Lapsed US ⏱️ 0.0 years remaining

Wide-band, voltage controlled oscillator utilizing complimentary metal oxide semiconductor integrated circuits and a constant current MOS-FET field effect transistor

Assignee: General Electric Co
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Filing: 1973-10-04
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Granted: 1975-04-15
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Expires: 1993-10-04
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Abstract

Abstract A wide-band, voltage controlled oscillator is described which has a frequency range of six decades. The voltage controlled oscillator (VCO), which uses complementary metal oxide, semiconductor field effect transistor elements (C-MOS-FET''s), is basically an astable multivibrator which is operated from a voltage controlled, variable amplitude, constant current source. The constant current source includes a p-channel MOS-FET operated in a saturated mode to provide a constant current which may be selectively varied as a function of the gate to source voltage. The current source is coupled to a capacitor storage element through a pair of C-MOS-FET''s which selectively establish a conducting path between the capacitor and the constant current source to charge and discharge the capacitor. The C-MOS-FET elements through which the capacitor charges and discharges are controlled by a C-MOS-FET switch means which is actuated in response to the voltage level on the capacitor. By utilizing a constant current source to charge the capacitor, linear charging is easily achieved. Furthermore, the rate at which the capacitor is charged, and hence, the oscillator frequency, may be readily varied over a wide range of values by varying the current level as a function of the input voltage applied to the gate of the constant current p-channel MOS-FET. In one example, a VCO is described which is capable of operating over a frequency range from 5 Hz to 5.5 MHz, and may, in one application described herein, form part of a Phase Locked Loop which is capable of operating over a dynamic frequency range of five decades, i.e., 50 Hz to 5 MHz.

Inventors

  • 👤 Jr Lester F Schowe

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 10:20
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/353; H03K3/354

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 193 words
A voltage controlled oscillator comprising: a. a voltage controlled constant current source including a Complementary Metal Oxide Semiconductor element; b. an input terminal coupled to said constant current source adapted to receive an input voltage to vary the current level from said source as a function of the input voltage. c. a storage element; d. means including a Complementary Metal Oxide Semiconductor FET pair coupled between said constant current source and said storage element for alternately establishing a charging and discharging path for said storage element one of said FET elements connecting the storage element to said constant current source to charge said capacitor from said source and the other FET of said pair rapidly discharging said capacitor through said FET to a point other than the constant current source. e. semiconductor switching means having an input coupled to said storage element and an output coupled to said means for establishing a charging and discharging path, said switching means being actuated in response to the voltage level On said storage element to connect said storage element intermittently to said constant current source to charge said element at a rate proportional to said current.
Claim 2
Dependent Claim 193 words
A voltage controlled oscillator comprising: a. a voltage controlled constant current source including a Complementary Metal Oxide Semiconductor element; b. an input terminal coupled to said constant current source adapted to receive an input voltage to vary the current level from said source as a function of the input voltage. c. a storage element; d. means including a Complementary Metal Oxide Semiconductor FET pair coupled between said constant current source and said storage element for alternately establishing a charging and discharging path for said storage element one of said FET elements connecting the storage element to said constant current source to charge said capacitor from said source and the other FET of said pair rapidly discharging said capacitor through said FET to a point other than the constant current source. e. semiconductor switching means having an input coupled to said storage element and an output coupled to said means for establishing a charging and discharging path, said switching means being actuated in response to the voltage level On said storage element to connect said storage element intermittently to said constant current source to charge said element at a rate proportional to said current.
Claim 3
Dependent Claim 73 words
The voltage controlled oscillator according to claim 1 wherein said semiconductor switching means includes a complementary Metal Oxide Semiconductor FET pair having their gate electrodes coupled to said storage element to control the conducting states of the FET pair in response to the voltage level on said storage element and the drain electrodes of said C-MOS-FET pair being connected to the gate electrodes of the C-MOS-FET pair in said charging and discharging path.
Claim 4
Dependent Claim 37 words
The voltage controlled oscillator according to claim 1 wherein all the semiconductor elements in said current source, said charging and discharging path and the switching means are Complementary Metal Oxide Semiconductor FET''s mounted on a common substrate.
Claim 5
Dependent Claim 44 words
The voltage controlled oscillator according to claim 1 including a voltage sensitive logic element coupled between said storage element and the input of said switch means, said logic element being responsive to the voltage level on said storage element to actuate the switching means.
Claim 6
Dependent Claim 18 words
The voltage controlled oscillator according to claim 4 wherein said voltage sensitive logic element is a NAND gate.
Claim 7
Dependent Claim 63 words
The voltage controlled oscillator according to claim 2 wherein a voltage sensitive logic element is coupled between said storage element and the gate electrodes of the C-MOS-FET pair of said switching means, the polarity of the output from said logic element is reversed when the voltage across said storage exceeds a reference level to switch the conducting states of C-MOS-FET''s of the pair.
Claim 8
Dependent Claim 16 words
The voltage controlled oscillator according to claim 6 wherein said logic element is a NAND gate.
Claim 9
Dependent Claim 70 words
The voltage controlled oscillator according to claim 2 wherein the source electrode of one of the FET''s in the charging and discharging path is connected to the constant current source, and the drain electrodes both FET''s in the charging and discharging path are connected to said storage element whereby said storage element is charged from said constant current source whenever said one of the FET''s is in the conducting state.

References Cited (Backward Citations)

US3702446A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-04-14 1978-10-14 1979-04-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-04-14 1982-10-14 1983-04-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-04-14 1986-10-14 1987-04-15 $7700.00 Window Closed / Lapsed

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