Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
193 words
A voltage controlled oscillator comprising: a. a voltage controlled constant current source including a Complementary Metal Oxide Semiconductor element; b. an input terminal coupled to said constant current source adapted to receive an input voltage to vary the current level from said source as a function of the input voltage. c. a storage element; d. means including a Complementary Metal Oxide Semiconductor FET pair coupled between said constant current source and said storage element for alternately establishing a charging and discharging path for said storage element one of said FET elements connecting the storage element to said constant current source to charge said capacitor from said source and the other FET of said pair rapidly discharging said capacitor through said FET to a point other than the constant current source. e. semiconductor switching means having an input coupled to said storage element and an output coupled to said means for establishing a charging and discharging path, said switching means being actuated in response to the voltage level On said storage element to connect said storage element intermittently to said constant current source to charge said element at a rate proportional to said current.
Claim 2
Dependent Claim
193 words
A voltage controlled oscillator comprising: a. a voltage controlled constant current source including a Complementary Metal Oxide Semiconductor element; b. an input terminal coupled to said constant current source adapted to receive an input voltage to vary the current level from said source as a function of the input voltage. c. a storage element; d. means including a Complementary Metal Oxide Semiconductor FET pair coupled between said constant current source and said storage element for alternately establishing a charging and discharging path for said storage element one of said FET elements connecting the storage element to said constant current source to charge said capacitor from said source and the other FET of said pair rapidly discharging said capacitor through said FET to a point other than the constant current source. e. semiconductor switching means having an input coupled to said storage element and an output coupled to said means for establishing a charging and discharging path, said switching means being actuated in response to the voltage level On said storage element to connect said storage element intermittently to said constant current source to charge said element at a rate proportional to said current.
Claim 3
Dependent Claim
73 words
The voltage controlled oscillator according to claim 1 wherein said semiconductor switching means includes a complementary Metal Oxide Semiconductor FET pair having their gate electrodes coupled to said storage element to control the conducting states of the FET pair in response to the voltage level on said storage element and the drain electrodes of said C-MOS-FET pair being connected to the gate electrodes of the C-MOS-FET pair in said charging and discharging path.
Claim 4
Dependent Claim
37 words
The voltage controlled oscillator according to claim 1 wherein all the semiconductor elements in said current source, said charging and discharging path and the switching means are Complementary Metal Oxide Semiconductor FET''s mounted on a common substrate.
Claim 5
Dependent Claim
44 words
The voltage controlled oscillator according to claim 1 including a voltage sensitive logic element coupled between said storage element and the input of said switch means, said logic element being responsive to the voltage level on said storage element to actuate the switching means.
Claim 6
Dependent Claim
18 words
The voltage controlled oscillator according to claim 4 wherein said voltage sensitive logic element is a NAND gate.
Claim 7
Dependent Claim
63 words
The voltage controlled oscillator according to claim 2 wherein a voltage sensitive logic element is coupled between said storage element and the gate electrodes of the C-MOS-FET pair of said switching means, the polarity of the output from said logic element is reversed when the voltage across said storage exceeds a reference level to switch the conducting states of C-MOS-FET''s of the pair.
Claim 8
Dependent Claim
16 words
The voltage controlled oscillator according to claim 6 wherein said logic element is a NAND gate.
Claim 9
Dependent Claim
70 words
The voltage controlled oscillator according to claim 2 wherein the source electrode of one of the FET''s in the charging and discharging path is connected to the constant current source, and the drain electrodes both FET''s in the charging and discharging path are connected to said storage element whereby said storage element is charged from said constant current source whenever said one of the FET''s is in the conducting state.