Abstract The switching speed of a thyristor is increased without correspondingly increasing the forward voltage drop by selectively irradiating at least portions of the PN junction between the conducting and gating portions, and 5 to 30% of the adjacent surface area of the conducting portions of the device. 50 to 100% of the surface area of the gating portions, and the peripheral portions can also be irradiated at the same time to decrease gate sensitivity and increase blocking voltage of the thyristor, respectively. Preferably, the thyristor is irradiated with electron radiation which preferably is of an intensity greater than 1 Mev and most desirably about 2 Mev. The electron irradiation is preferably to a dosage of between about 1 X 1013 electrons/cm2 and 1 X 1015 electrons/cm2.
Inventors
👤 Jerry L Brown
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-10-28 05:13
CPC Classifications
H; H10; H10P; H10P95/00; H10P34/00; H10P34/40
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
49 words
A METHOD OF DECREASING THE TURN-OFF A THYRISTOR WITHOUT CORRESPONDINGLY INCREASING THE FOWARD VOLTAGE DROP OF THE DEVICE COMPRISING THE STEPS OF: A. MASKING AGAINST RADIATION BETWEEN ANOUT 60 AND 95% OF THE SURFACE AREA OF CONDUCTING PORTIONS OF THE THYRISTOR SPACED FROM GATING PORTIONS OF THE THYRISTOR; AND
Claim 2
Independent Claim
49 words
A METHOD OF DECREASING THE TURN-OFF A THYRISTOR WITHOUT CORRESPONDINGLY INCREASING THE FOWARD VOLTAGE DROP OF THE DEVICE COMPRISING THE STEPS OF: A. MASKING AGAINST RADIATION BETWEEN ANOUT 60 AND 95% OF THE SURFACE AREA OF CONDUCTING PORTIONS OF THE THYRISTOR SPACED FROM GATING PORTIONS OF THE THYRISTOR; AND
Claim 3
Dependent Claim
41 words
A method of decreasing the turn-off time of a thyristor without correspondingly increasing the forward voltage drop of the device as set forth in claim 1 wherein: the irradiating step is performed with electron radiation of greater than 1 Mev intensity.
Claim 4
Dependent Claim
47 words
A method of decreasing the turn-off time of a thyristor without correspondingly increasing the forward voltage drop of the device as set forth in claim 2 wherein: the irradiating step is performed to a radiation dosage of between about 1 X 1013 and 1 X 1015 electrons/cm2.
Claim 5
Dependent Claim
56 words
A method of decreasing the turn-off time of a thyristor without correspondingly increasing the forward voltage drop of the device as set forth in claim 1 wherein in addition: about 50 to 100% of gating portions of the thyristor are irradiated as a part of step (b) to increase the gate current to fire the thyristor.
Claim 6
Dependent Claim
48 words
A method of decreasing the turn-off time of a thyristor without correspondingly increasing the forward voltagE drop of the device as set forth in claim 1 wherein: peripheral portions of the thyristor are irradiated as part of step (b) to increase the blocking voltage yield of the thyristor.