US3872300A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optoelectronic device
Assignee: Individual
•
Filing: 1974-03-01
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Granted: 1975-03-18
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Expires: 1994-03-01
Abstract
Abstract An optoelectronic device comprising a photoconductor and an emitter which are electrically interconnected, the photoconductor being made from low-resistance semiconductor material with highresistance inclusions forming n n or p p junctions at their boundaries in accordance with the type of conductivity of said semiconductor material, which ensures the generation of infralowfrequency electric oscillations.
Inventors
- 👤 Alexandr Yakovlevich Vul
- 👤 Alexandr Yakovlevich Shik
- 👤 Natalia Alexandrovn Dobryakova
- 👤 Ibragim Ibragimovich Saidashev
- 👤 Jury Vasilievich Shmartsev
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:23
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/42; H10; H10F; H10F99/00; H10N; H10N80/00; H10N80/10; H10N80/103
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
59 words
An optoelectronic device comprising a photoconductor provided with two leads and made from low-resistance n-type semiconductor material with high-resistance inclusions forming n n junctions at the boundaries thereof, and an emitter also provided with two leads, one being connected to one of the leads of said photoconductor and the other being connected to the second lead of said photoconductor.
Claim 2
Dependent Claim
59 words
An optoelectronic device comprising a photoconductor provided with two leads and made from low-resistance n-type semiconductor material with high-resistance inclusions forming n n junctions at the boundaries thereof, and an emitter also provided with two leads, one being connected to one of the leads of said photoconductor and the other being connected to the second lead of said photoconductor.
Claim 3
Dependent Claim
53 words
An optoelectronic device as claimed in claim 1, wherein used as said low-resistance semiconductor material is n-type gallium antimonide doped with sulphur and cooled down to a temperature below 100*K, and used as said emitter is a source of light with a spectral composition falling within the range of 0.2 to 2 eV.
Claim 4
Dependent Claim
59 words
An optoelectronic device comprising a photoconductor provided with two leads and made from low-resistance p-type semiconductor material with high-resistance inclusions forming p p junctions at the boundaries thereof, and an emitter also provided with two leads, one being connected to one of the leads of said photoconductor and the other being connected to the second lead of said photoconductor.
Claim 5
Dependent Claim
59 words
An optoelectronic device comprising a photoconductor provided with two leads and made from low-resistance p-type semiconductor material with high-resistance inclusions forming p p junctions at the boundaries thereof, and an emitter also provided with two leads, one being connected to one of the leads of said photoconductor and the other being connected to the second lead of said photoconductor.
Claim 6
Dependent Claim
53 words
An optoelectronic device as claimed in claim 3, wherein used as said low-resistance semiconductor material is p-type gallium antimonide doped with sulphur and cooled down to a temperature below 100*K, and used as said emitter is a source of light with a spectral composition falling within the range of 0.2 to 2 eV.
References Cited (Backward Citations)
US1988274A
Cited
US3210549A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-17 | 1978-09-16 | 1979-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-17 | 1982-09-16 | 1983-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-17 | 1986-09-16 | 1987-03-18 | $7700.00 | Window Closed / Lapsed |