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US3871018A Expired / Lapsed US ⏱️ 0.0 years remaining

Construction of packages for semiconductor devices

Assignee: Plessey Overseas Ltd
•
Filing: 1973-07-09
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Granted: 1975-03-11
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Expires: 1993-07-09
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Abstract

Abstract A semiconductor package has a sub-assembly unit comprising a lead frame bonded onto a metal support by a composite glass frit layer on the peripheral parts of the support, a semiconductor device is bonded to the support, or to an intermediate member comprising part of the support, and a metal capping member is secured to the lead frame by an adhesive coating on a glass frit base layer on the capping member.

Inventors

  • 👤 Sydney Jackson
  • 👤 Joseph Bell Titterington

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 20:52
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/60; H10W70/00; H10W70/40; H10W70/453; H10W76/10; H10W76/12; H10W76/13; H10W76/134; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/756

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 278 words
A package construction for a semiconductor device including a sub-assembly unit having a metal support to which the semiconductor device is bonded, conductors initially comprising a lead frame, and selectively on peripheral parts of the suppOrt a first composite glass layer having a composite composition comprising a first glass base layer with an affinity for the material of the support, and on said first glass base layer securing said conductors onto said support a first glass coating with a melting point below that of said first glass base layer whereby a minimum thickness of said first glass base layer insulates said conductors from said support, said package construction also including, to seal a semiconductor device bonded to said support within said package, a metal capping member secured to said sub-assembly unit, on said capping member a second composite glass layer having a composite composition comprising a second glass base layer with an affinity for the material of said capping member, and on at least part of said second glass base layer of said second composite layer a second, adhesive coating of glass having a melting point lower than the melting point of said first glass coating of said first composite layer and lower than said second glass base layer of said second composite layer so as to maintain the accurate alignment of said conductors embedded in said first glass coating with respect to said semiconductor device and to prevent damage to said semiconductor device, when so secured said conductors being insulated from said capping member, and said support said capping member and said first composite glass layer on said support having co-efficients of linear expansion substantially the same.
Claim 2
Dependent Claim 278 words
A package construction for a semiconductor device including a sub-assembly unit having a metal support to which the semiconductor device is bonded, conductors initially comprising a lead frame, and selectively on peripheral parts of the suppOrt a first composite glass layer having a composite composition comprising a first glass base layer with an affinity for the material of the support, and on said first glass base layer securing said conductors onto said support a first glass coating with a melting point below that of said first glass base layer whereby a minimum thickness of said first glass base layer insulates said conductors from said support, said package construction also including, to seal a semiconductor device bonded to said support within said package, a metal capping member secured to said sub-assembly unit, on said capping member a second composite glass layer having a composite composition comprising a second glass base layer with an affinity for the material of said capping member, and on at least part of said second glass base layer of said second composite layer a second, adhesive coating of glass having a melting point lower than the melting point of said first glass coating of said first composite layer and lower than said second glass base layer of said second composite layer so as to maintain the accurate alignment of said conductors embedded in said first glass coating with respect to said semiconductor device and to prevent damage to said semiconductor device, when so secured said conductors being insulated from said capping member, and said support said capping member and said first composite glass layer on said support having co-efficients of linear expansion substantially the same.
Claim 3
Dependent Claim 278 words
A package construction for a semiconductor device including a sub-assembly unit having a metal support to which the semiconductor device is bonded, conductors initially comprising a lead frame, and selectively on peripheral parts of the suppOrt a first composite glass layer having a composite composition comprising a first glass base layer with an affinity for the material of the support, and on said first glass base layer securing said conductors onto said support a first glass coating with a melting point below that of said first glass base layer whereby a minimum thickness of said first glass base layer insulates said conductors from said support, said package construction also including, to seal a semiconductor device bonded to said support within said package, a metal capping member secured to said sub-assembly unit, on said capping member a second composite glass layer having a composite composition comprising a second glass base layer with an affinity for the material of said capping member, and on at least part of said second glass base layer of said second composite layer a second, adhesive coating of glass having a melting point lower than the melting point of said first glass coating of said first composite layer and lower than said second glass base layer of said second composite layer so as to maintain the accurate alignment of said conductors embedded in said first glass coating with respect to said semiconductor device and to prevent damage to said semiconductor device, when so secured said conductors being insulated from said capping member, and said support said capping member and said first composite glass layer on said support having co-efficients of linear expansion substantially the same.
Claim 4
Dependent Claim 278 words
A package construction for a semiconductor device including a sub-assembly unit having a metal support to which the semiconductor device is bonded, conductors initially comprising a lead frame, and selectively on peripheral parts of the suppOrt a first composite glass layer having a composite composition comprising a first glass base layer with an affinity for the material of the support, and on said first glass base layer securing said conductors onto said support a first glass coating with a melting point below that of said first glass base layer whereby a minimum thickness of said first glass base layer insulates said conductors from said support, said package construction also including, to seal a semiconductor device bonded to said support within said package, a metal capping member secured to said sub-assembly unit, on said capping member a second composite glass layer having a composite composition comprising a second glass base layer with an affinity for the material of said capping member, and on at least part of said second glass base layer of said second composite layer a second, adhesive coating of glass having a melting point lower than the melting point of said first glass coating of said first composite layer and lower than said second glass base layer of said second composite layer so as to maintain the accurate alignment of said conductors embedded in said first glass coating with respect to said semiconductor device and to prevent damage to said semiconductor device, when so secured said conductors being insulated from said capping member, and said support said capping member and said first composite glass layer on said support having co-efficients of linear expansion substantially the same.
Claim 5
Dependent Claim 67 words
A package construction as claimed in claim 1 in which the co-efficients of linear expansion of said support and the semiconductor material of said semiconductor device are substantially the same and the melting point of said first and second glass base layers on said support and said capping member are substantially greater than the respective melting points of the respective adjacent layers, said adjacent layers being glass.
Claim 6
Dependent Claim 35 words
A package construction as claimed in claim 1 in which said support and said capping member have a dished shape, and said first composite glass layer is on only the rim parts of said support.
Claim 7
Dependent Claim 68 words
A package construction as set forth in claim 1 wherein said second adhesive coating on said capping member comprises a glass having a melting point below 550*C, said melting point of said first glass coating on said support being less than 600*C and said melting point of said first and second glass base layers on said support and said capping member having melting points in excess of 1,000*C.
Claim 8
Dependent Claim 35 words
A package construction as claimed in claim 4 in which said support and said capping member have a dished shape, and said first composite glass layer is on only the rim parts of said support.
Claim 9
Dependent Claim 78 words
A packaged semiconductor device including a sub-assembly unit and a metal capping member as claimed in claim 1, said device being bonded to said sub-assembly unit and said capping member being secured to said sub-assembly unit, the arrangement being such that an end portion of each conductor is adjacent to a contact-bearing face of said semiconductor device, and electrical interconnections are provided to extend individually between the contacts on said device and the end portions of said conductors.

References Cited (Backward Citations)

US2933634A Cited
US3404213A Cited
US3408222A Cited
US3469017A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-03-10 1978-09-09 1979-03-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-03-10 1982-09-09 1983-03-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-03-10 1986-09-09 1987-03-11 $7700.00 Window Closed / Lapsed

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