US3868924A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for indiffusing dopants into semiconductor material
Assignee: Siemens AG
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Filing: 1972-10-05
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Granted: 1975-03-04
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Expires: 1992-10-05
Abstract
Abstract Apparatus for indiffusing dopant into a semiconductor material. The apparatus comprises a heatable tube of the same semiconductor material, the wall of which is from 0.5 to 20 mm thick and is gas-tight under reaction conditions. Heating means include an induction coil spaced from the heatable tube and a relatively narrow graphite ring fixed about the tube to accelerate such heating.
Inventors
- 👤 Konrad Reuschel
- 👤 Wolfgang Keller
- 👤 Arno Kersting
- 👤 Reimer Emeis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:06
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C23; C23C; C23C16/00; C23C16/44; C30B31/12; Y; Y10; Y10S; Y10S118/00; Y10S118/90
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
71 words
APPARATUS FOR INDIFFUSING DOPANTS INTO A SEMICONDUCTOR MATERIAL WHICH COMPRISES A HEATABLE TUBE OF THE SAME SEMICONDUCTOR MATERIAL IN WHICH THE SEMICONDUCTOR MATERIAL IS ACCOMMODATED AND IN WHICH THE DOPING SUBSTRATE IS FOUND, THE WALL OF THE TUBE IS FROM 0.5 MM THICK, IS VIRTUALLY GAS-TIGHT UNDER DIFFUSION CONDITIONS, A RELATIVELY NARROW HIGH CONDUCTIVITY RING IS ON SAID HEATABLE TUBE, AND AN INDUCTION COIL SURROUNDS THE CIRCUMFERENCE OF SAID HEATABLE TUBE.
Claim 2
Dependent Claim
71 words
APPARATUS FOR INDIFFUSING DOPANTS INTO A SEMICONDUCTOR MATERIAL WHICH COMPRISES A HEATABLE TUBE OF THE SAME SEMICONDUCTOR MATERIAL IN WHICH THE SEMICONDUCTOR MATERIAL IS ACCOMMODATED AND IN WHICH THE DOPING SUBSTRATE IS FOUND, THE WALL OF THE TUBE IS FROM 0.5 MM THICK, IS VIRTUALLY GAS-TIGHT UNDER DIFFUSION CONDITIONS, A RELATIVELY NARROW HIGH CONDUCTIVITY RING IS ON SAID HEATABLE TUBE, AND AN INDUCTION COIL SURROUNDS THE CIRCUMFERENCE OF SAID HEATABLE TUBE.
Claim 3
Dependent Claim
30 words
The apparatus of claim 1, wherein the tube is of a semiconductor material selected from silicon, germanium, silicon carbide, tungsten carbide, titanium carbide, indium phosphide, gallium arsenide and boron nitride.
Claim 4
Dependent Claim
24 words
The apparatus of claim 2, wherein each end of said tube is covered with a lid of the same semiconductor material as said tube.
Claim 5
Dependent Claim
36 words
The apparatus of claim 2 including stopper closing each end of said tube, each of said stoppers, being formed with an opening, the opening in one of said stoppers serving for the introduction of doping substance.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-03 | 1978-09-02 | 1979-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-03 | 1982-09-02 | 1983-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-03 | 1986-09-02 | 1987-03-04 | $7700.00 | Window Closed / Lapsed |