US3864165A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of ferrite film for microwave applications
Assignee: Westinghouse Electric Corp
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Filing: 1973-01-02
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Granted: 1975-02-04
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Expires: 1993-01-02
Abstract
Abstract A method is disclosed for producing films of polycrystalline ferrites which are suitable for use in microwave applications. Chemical transport deposition techniques are employed wherein a temperature gradient between source and substrate materials is maintained while a reaction gas if flowed thereabout (in an open reactor).
Inventors
- 👤 Aleksander I Braginski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H; H01; H01F; H01F41/00; H01F41/14; H01F41/22
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
220 words
IN THE CHEMICAL TRANSPORT DEPOSITION METHOD OF PRODUCING ON A SUBSTRATE POLYCRYSTALLINE FILMS OF SPINEL FERRITES HAVING A THICKNESS OF LESS THAN ABOUT 1500 MICRONS AND WHICH ARE SUITABLE FOR USE IN MICROWAVE APPLICATIONS, THE STEPS COMPRISING: ASSEMBLYING IN A REACTOR A MULTICOMPONENT SOURCE MATERIAL OF A SPINEL FERRITE SELECTED FROM THE GROUP CONSISTING OF MAGNESIUM FERRITES, MANGANESE-MAGNESIUM FERRITES, AND TRANSITIONAL METAL FERRITES AND A SUBSTRATE MATERIAL IN SPACED RELATION TO ONE ANOTHER, THE SUBSTRATE MATERIAL BEING SUITABLE FOR USE IN A MICROWAVE APPLICATION, FLOWING A CARRIER GAS AND A REACTION GAS THROUGH THE REACTOR IN CONTACT WITH SAID SOURCE MATERIAL AND SAID SUBSTRATE MATERIAL SAID CARRIER GAS BEING SELECTED FROM THE GROUP CONSISTING OF INERT GASES AND OXYGEN AND MIXTURES THEREOF AND SAID REACTION GAS BEING SELECTED FROM THE GROUP CONSISTING OF THE HALOGENS AND HALOGEN HYDRIDES, HEATING THE MATERIALS IN THE REACTOR WITH A SINGLE HEAT SOURCE TO A TEMPERATURE SUFFICIENTLY HIGH TO CAUSE A REACTION BETWEEN THE SOURCE MATERIAL AND THE REACTION GAS, MAINTAINING THE SUBSTRATE AT A TEMPERATURE WITHIN THE RANGE BETWEEN 20*C AND 200*C BELOW THE TEMPERATURE OF THE SOURCE FOR A PREDETERMINED LENGTH OF TIME WHEREBY A FILM OF THE DESIRED THICKNESS OF THE SOURCE MATERIAL IS DEPOSITED ON THE SUBSTRATE AND THEREAFTER COOLING THE SUBSTRATE WITH THE DEPOSITED FILM THEREON TO ROOM TEMPERATURE.
Claim 2
Dependent Claim
220 words
IN THE CHEMICAL TRANSPORT DEPOSITION METHOD OF PRODUCING ON A SUBSTRATE POLYCRYSTALLINE FILMS OF SPINEL FERRITES HAVING A THICKNESS OF LESS THAN ABOUT 1500 MICRONS AND WHICH ARE SUITABLE FOR USE IN MICROWAVE APPLICATIONS, THE STEPS COMPRISING: ASSEMBLYING IN A REACTOR A MULTICOMPONENT SOURCE MATERIAL OF A SPINEL FERRITE SELECTED FROM THE GROUP CONSISTING OF MAGNESIUM FERRITES, MANGANESE-MAGNESIUM FERRITES, AND TRANSITIONAL METAL FERRITES AND A SUBSTRATE MATERIAL IN SPACED RELATION TO ONE ANOTHER, THE SUBSTRATE MATERIAL BEING SUITABLE FOR USE IN A MICROWAVE APPLICATION, FLOWING A CARRIER GAS AND A REACTION GAS THROUGH THE REACTOR IN CONTACT WITH SAID SOURCE MATERIAL AND SAID SUBSTRATE MATERIAL SAID CARRIER GAS BEING SELECTED FROM THE GROUP CONSISTING OF INERT GASES AND OXYGEN AND MIXTURES THEREOF AND SAID REACTION GAS BEING SELECTED FROM THE GROUP CONSISTING OF THE HALOGENS AND HALOGEN HYDRIDES, HEATING THE MATERIALS IN THE REACTOR WITH A SINGLE HEAT SOURCE TO A TEMPERATURE SUFFICIENTLY HIGH TO CAUSE A REACTION BETWEEN THE SOURCE MATERIAL AND THE REACTION GAS, MAINTAINING THE SUBSTRATE AT A TEMPERATURE WITHIN THE RANGE BETWEEN 20*C AND 200*C BELOW THE TEMPERATURE OF THE SOURCE FOR A PREDETERMINED LENGTH OF TIME WHEREBY A FILM OF THE DESIRED THICKNESS OF THE SOURCE MATERIAL IS DEPOSITED ON THE SUBSTRATE AND THEREAFTER COOLING THE SUBSTRATE WITH THE DEPOSITED FILM THEREON TO ROOM TEMPERATURE.
Claim 3
Dependent Claim
49 words
The process of claim 1 in which a portion of the ferrite ions are substituted with chromium by including by reaction wIth the ferrite a predetermined amount of at least one material selected from the group consisting of chromic oxide, magnesium chromite and manganese chromite within the source material.
Claim 4
Dependent Claim
21 words
The process of claim 2 in which the reaction gas is selected from the group consisting of chlorine, bromine and iodine.
Claim 5
Dependent Claim
26 words
The process of claim 2 in which the carrier gas is oxygen and the reaction gas is present in an amount of about 4 volume percent.
Claim 6
Dependent Claim
22 words
The process of claim 1 in which the temperature of the source is maintained within the range between about 1050*C and 1350*C.
Claim 7
Dependent Claim
25 words
The process of claim 1 in which the reaction gas is present within the range between 0.1% and 10% by volume of the carrier gas.
Claim 8
Dependent Claim
52 words
The process of claim 1 in which the carrier gas contains up to 20% by volume of oxygen therein and said carrier gas is metered to the reactor at a rate between about 0.01 and 10 liters per minute for a reaction vessel of about 2 inches in diameter during the reaction.
Claim 9
Dependent Claim
22 words
The method of claim 1 in which the substrate material has a coefficient of thermal expansion approaching that of the ferrite material.
Claim 10
Dependent Claim
215 words
In the chemical transport deposition method of producing on a substrate polycrystalline films of spinel ferrites having a thickness of less than about 1000 microns and which are suitable for use in microwave applications, the steps comprising: assemblying in a reactor a multicomponent source material of a spinel ferrite selected from the group consisting of magnesium ferrites, manganese-magnesium ferrites, and transitional metal ferrites, a mask in predetermined spaced relation and a substrate material in seating engagement on the mask, the substrate material being suitable for use in a microwave application, flowing a carrier gas and a gas which is reactive substantially only with the source material through the reactor in contact with at least the source and the substrate said carrier gas being selected from the group consisting of inert gases and oxygen and mixtures thereof and said reactive gas being selected from the group consisting of the halogens and halogen hydrides, applying heat to the materials contained in the reactor for securing the temperature of the source material to a range between 1200*C and 1350*C while maintaining the substrate at a temperature within the range between 20*C and 200*C below the temperature of the source for a predetermined period of time and thereafter cooling the substrate with the deposited film thereon to room temperature.
Claim 11
Dependent Claim
215 words
In the chemical transport deposition method of producing on a substrate polycrystalline films of spinel ferrites having a thickness of less than about 1000 microns and which are suitable for use in microwave applications, the steps comprising: assemblying in a reactor a multicomponent source material of a spinel ferrite selected from the group consisting of magnesium ferrites, manganese-magnesium ferrites, and transitional metal ferrites, a mask in predetermined spaced relation and a substrate material in seating engagement on the mask, the substrate material being suitable for use in a microwave application, flowing a carrier gas and a gas which is reactive substantially only with the source material through the reactor in contact with at least the source and the substrate said carrier gas being selected from the group consisting of inert gases and oxygen and mixtures thereof and said reactive gas being selected from the group consisting of the halogens and halogen hydrides, applying heat to the materials contained in the reactor for securing the temperature of the source material to a range between 1200*C and 1350*C while maintaining the substrate at a temperature within the range between 20*C and 200*C below the temperature of the source for a predetermined period of time and thereafter cooling the substrate with the deposited film thereon to room temperature.
Claim 12
Dependent Claim
12 words
The process of claim 2 in which the reaction gas is chlorine.
Claim 13
Dependent Claim
18 words
The process of claim 10 in which the carrier gas contains up to 20% by volume of oxygen.
Claim 14
Dependent Claim
14 words
The process of claim 10 in which the carrier gas is substantially all oxygen.
Claim 15
Dependent Claim
32 words
The method of claim 9 in which a portion of the ferrite ions are substituted with chromium and the reaction gas is selected from the group consisting of chlorine, bromine and iodine.
Claim 16
Dependent Claim
14 words
The process of claim 9 in which the carrier gas is substantially all oxygen.
Claim 17
Dependent Claim
20 words
The process of claim 13 in which the reaction gas is chlorine and the carrier gas is substantially all oxygen.
Claim 18
Dependent Claim
34 words
The process of claim 1 in which the carrier gas includes in excess of 20 volume percent oxygen in admixture with an inert gas selected from the group consisting of helium, argon and nitrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-03 | 1978-08-05 | 1979-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-03 | 1982-08-05 | 1983-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-03 | 1986-08-05 | 1987-02-04 | $7700.00 | Window Closed / Lapsed |