US3864161A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for adjusting resonators formed on a piezoelectric wafer
Assignee: AT&T Inc
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Filing: 1973-08-10
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Granted: 1975-02-04
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Expires: 1993-08-10
Abstract
Abstract Each of one or more resonators formed by vapor depositing electrodes on opposite faces of a piezoelectric crystal wafer or plate, are adjusted to a predetermined resonant frequency by the deposition of a material on one electrode of each resonator. This adjustment is accomplished using a pliant, insulative mask which intimately engages and covers the surface of the crystal wafer while exposing the electrode to the deposition of the material. The material is depositied on the exposed resonator electrode and the resonant frequency simultaneously monitored until a predetermined frequency is attained.
Inventors
- 👤 Edwin C Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 05:35
CPC Classifications
H; H03; H03H; H03H3/00; H03H3/007; H03H3/02; H03H3/04; C; C23; C23C; C23C14/00; C23C14/04; C23C14/042; Y; Y10; Y10T; Y10T29/00; Y10T29/42; Y10T29/49; Y10T29/49002; Y10T29/49004
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
107 words
A METHOD FOR ADJUSTING THE RESONANT FREQUENCY OF A RESONATOR, FORMED ON A PIEZOELECTRIC WAFER, TO A PREDETERMINED RESONANT FREQUENCY, SAID METHOD COMPRISING THE STEPS OF: PLIANTLY CONTACTING A MAJOR SURFACE OF THE WAFER WITH A PLIANT MASK HAVING AN APERTURE THEREIN TO EXPOSE A SELECTED PORTION OF THE RESONATOR; DEPOSITING MATERIAL ON THE SELECTED PORTION OF THE RESONATOR THROUGH THE MASK TO ADJUST THE RESONANT FREQUENCY OF THE RESONATOR; TESTING THE RESONATOR BY EXCITING AND MONITORING THE RESONANT FREQUENCY THEREOF AS MATERIAL IS DEPOSITED ON THE SELECTED PORTION; AND STOPPING THE DEPOSITION OF MATERIAL ON THE SELECTED PORTION WHEN THE RESONANT FREQUENCY REACHES A PREDETERMINED VALUE.
Claim 2
Independent Claim
107 words
A METHOD FOR ADJUSTING THE RESONANT FREQUENCY OF A RESONATOR, FORMED ON A PIEZOELECTRIC WAFER, TO A PREDETERMINED RESONANT FREQUENCY, SAID METHOD COMPRISING THE STEPS OF: PLIANTLY CONTACTING A MAJOR SURFACE OF THE WAFER WITH A PLIANT MASK HAVING AN APERTURE THEREIN TO EXPOSE A SELECTED PORTION OF THE RESONATOR; DEPOSITING MATERIAL ON THE SELECTED PORTION OF THE RESONATOR THROUGH THE MASK TO ADJUST THE RESONANT FREQUENCY OF THE RESONATOR; TESTING THE RESONATOR BY EXCITING AND MONITORING THE RESONANT FREQUENCY THEREOF AS MATERIAL IS DEPOSITED ON THE SELECTED PORTION; AND STOPPING THE DEPOSITION OF MATERIAL ON THE SELECTED PORTION WHEN THE RESONANT FREQUENCY REACHES A PREDETERMINED VALUE.
Claim 3
Independent Claim
104 words
A method for adjusting the resonant frequency of a resonator on a piezoelectric wafer to a predetermined resonant frequency, comprising the steps of: intimately contacting the wafer with a pliant, insulative mask having an aperture therein to expose selected areas of the resonator; depositing a material on the selected areas of the resonator through the mask to adjust the resonant frequency of the resonator; exciting the resonator to resonance; monitoring the resonant frequency of the excited resonator as the material is deposited on the selected areas; and stopping the deposition of material on the selected areas when the resonant frequency reaches a predetermined value.
Claim 4
Independent Claim
104 words
A method for adjusting the resonant frequency of a resonator on a piezoelectric wafer to a predetermined resonant frequency, comprising the steps of: intimately contacting the wafer with a pliant, insulative mask having an aperture therein to expose selected areas of the resonator; depositing a material on the selected areas of the resonator through the mask to adjust the resonant frequency of the resonator; exciting the resonator to resonance; monitoring the resonant frequency of the excited resonator as the material is deposited on the selected areas; and stopping the deposition of material on the selected areas when the resonant frequency reaches a predetermined value.
Claim 5
Independent Claim
106 words
A method for adjusting the resonant frequency of a resonator on a piezoelectric wafer to a predetermined resonant frequency, comprising the steps of: intimately engaging at least one major surface of the wafer with a pliant, insulative mask having an aperture therein to expose a resonator electrode; depositing a metal on the resonator electrode through the mask to adjust the resonant frequency of the resonator; exciting the resonator to resonance; monitoring the resonant frequency of the excited resonator as metal is deposited on the electrode; and stopping the deposition of metal on the electrode when the monitored resonant frequency of the resonator reaches a predetermined value.
Claim 6
Independent Claim
106 words
A method for adjusting the resonant frequency of a resonator on a piezoelectric wafer to a predetermined resonant frequency, comprising the steps of: intimately engaging at least one major surface of the wafer with a pliant, insulative mask having an aperture therein to expose a resonator electrode; depositing a metal on the resonator electrode through the mask to adjust the resonant frequency of the resonator; exciting the resonator to resonance; monitoring the resonant frequency of the excited resonator as metal is deposited on the electrode; and stopping the deposition of metal on the electrode when the monitored resonant frequency of the resonator reaches a predetermined value.
Claim 7
Independent Claim
198 words
A method for adjusting the frequency response of a monolithic crystal filter which includes a piezoelectric crystal wafer with a plurality of resonators formed thereon, said method comprising the steps of: pliantly contacting a major surface of the wafer with a pliant mask having a plurality of apertures therein to expose at least one electrode of each resonator; depositing a metal on an exposed electrode of a first resonator to adjust the resonant frequency of the first resonator; exciting the first resonator to resonance; monitoring the resonant frequency of the excited first resonator as metal is deposited on the exposed electrode thereof; stopping the deposition of metal on the exposed electrode of the first resonator when the monitored resonant frequency of the resonator reaches a predetermined value; depositing the metal on an exposed electrode of a second resonator to adjust the resonant frequency of the second resonator; exciting the second resonator to resonance; monitoring the Resonant frequency of the excited second resonator as metal is being deposited on the exposed electrode thereof; and stopping the deposition of metal on the exposed electrode of the second resonator when the monitored resonant frequency of the resonator reaches a predetermined value.
Claim 8
Independent Claim
198 words
A method for adjusting the frequency response of a monolithic crystal filter which includes a piezoelectric crystal wafer with a plurality of resonators formed thereon, said method comprising the steps of: pliantly contacting a major surface of the wafer with a pliant mask having a plurality of apertures therein to expose at least one electrode of each resonator; depositing a metal on an exposed electrode of a first resonator to adjust the resonant frequency of the first resonator; exciting the first resonator to resonance; monitoring the resonant frequency of the excited first resonator as metal is deposited on the exposed electrode thereof; stopping the deposition of metal on the exposed electrode of the first resonator when the monitored resonant frequency of the resonator reaches a predetermined value; depositing the metal on an exposed electrode of a second resonator to adjust the resonant frequency of the second resonator; exciting the second resonator to resonance; monitoring the Resonant frequency of the excited second resonator as metal is being deposited on the exposed electrode thereof; and stopping the deposition of metal on the exposed electrode of the second resonator when the monitored resonant frequency of the resonator reaches a predetermined value.
Claim 9
Independent Claim
161 words
A method of adjusting the resonant frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said method comprising: forming a pliant interface between a mask having pliant material thereon and the piezoelectric wafer by urging the mask into intimate contact with the wafer with the pliant material therebetween; depositing a material through the mask onto a selected portion of the resonator, intimate contact between the mask and wafer restricting the deposition of the material to the selected portion; exciting the resonator to resonance while the material is deposited on the selected portion of the resonator, the pliant interface between the mask and the wafer permitting substantially free vibration of the excited resonator with the mask in intimate contact with the wafer; monitoring the resonant frequency of the excited resonator while the material is being deposited on the selected electrode; and stopping the deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 10
Independent Claim
161 words
A method of adjusting the resonant frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said method comprising: forming a pliant interface between a mask having pliant material thereon and the piezoelectric wafer by urging the mask into intimate contact with the wafer with the pliant material therebetween; depositing a material through the mask onto a selected portion of the resonator, intimate contact between the mask and wafer restricting the deposition of the material to the selected portion; exciting the resonator to resonance while the material is deposited on the selected portion of the resonator, the pliant interface between the mask and the wafer permitting substantially free vibration of the excited resonator with the mask in intimate contact with the wafer; monitoring the resonant frequency of the excited resonator while the material is being deposited on the selected electrode; and stopping the deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 11
Independent Claim
170 words
A method of adjusting the resonant frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said resonator including two mutually opposed electrodes formed on either side of the piezoelectric wafer, said method comprising: forming a pliant interface between a mask having a pliant material thereon and the piezoelectric wafer by urging the mask into intimate contact with the wafer with the pliant material therebetween; depositing a metal through the mask onto a selected resonator electrode, intimate contact between the mask and wafer restricting the deposition of the metal to the selected electrode; exciting the resonator to resonance while the metal is deposited on the selected electrode, the pliant interface between the mask and the wafer permitting substantially free vibration of the excited resonator with the mask in intimate contact with the wafer; monitoring the resonant frequency of the excited resonator while the material is deposited on the selected electrode; and stopping deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 12
Independent Claim
170 words
A method of adjusting the resonant frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said resonator including two mutually opposed electrodes formed on either side of the piezoelectric wafer, said method comprising: forming a pliant interface between a mask having a pliant material thereon and the piezoelectric wafer by urging the mask into intimate contact with the wafer with the pliant material therebetween; depositing a metal through the mask onto a selected resonator electrode, intimate contact between the mask and wafer restricting the deposition of the metal to the selected electrode; exciting the resonator to resonance while the metal is deposited on the selected electrode, the pliant interface between the mask and the wafer permitting substantially free vibration of the excited resonator with the mask in intimate contact with the wafer; monitoring the resonant frequency of the excited resonator while the material is deposited on the selected electrode; and stopping deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 13
Dependent Claim
109 words
Apparatus for adjusting the frequency of a resonator on a piezoelectric wafer, comprising: means for depositing a material; means for contacting and masking portions of a major surface of the wafer and permitting substantially uninhibited excitation of the resonator while said means contacts said surface, including a pliant mask with an aperture therethrough to expose a selected portion of the resonator to the deposition means; means for exciting the resonator and measuring the frequency response thereof as material from the deposition means is deposited on the selected portion; and means for stopping the deposition of material at a predetermined frequency, under the control of the exciting and measuring means.
Claim 14
Dependent Claim
109 words
Apparatus for adjusting the frequency of a resonator on a piezoelectric wafer, comprising: means for depositing a material; means for contacting and masking portions of a major surface of the wafer and permitting substantially uninhibited excitation of the resonator while said means contacts said surface, including a pliant mask with an aperture therethrough to expose a selected portion of the resonator to the deposition means; means for exciting the resonator and measuring the frequency response thereof as material from the deposition means is deposited on the selected portion; and means for stopping the deposition of material at a predetermined frequency, under the control of the exciting and measuring means.
Claim 15
Independent Claim
139 words
An apparatus for adjusting the frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said apparatus comprising: a mask having a pliant material thereon; means for urging the mask into intimate contact with the wafer to expose a selected portion of the resonator while forming a pliant interface between the mask and the wafer; means for depositing a material through the mask onto the selected portion of the resonator; means for exciting the resonator to resonance while the material is deposited on the selected portion of the resonator; means for monitoring the resonant frequency of the excited resonator while the material is being deposited on the selected portion of The resonator; and means responsive to the monitoring means for stopping deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 16
Independent Claim
139 words
An apparatus for adjusting the frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said apparatus comprising: a mask having a pliant material thereon; means for urging the mask into intimate contact with the wafer to expose a selected portion of the resonator while forming a pliant interface between the mask and the wafer; means for depositing a material through the mask onto the selected portion of the resonator; means for exciting the resonator to resonance while the material is deposited on the selected portion of the resonator; means for monitoring the resonant frequency of the excited resonator while the material is being deposited on the selected portion of The resonator; and means responsive to the monitoring means for stopping deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 17
Independent Claim
184 words
An apparatus for adjusting the frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said resonator including two mutually opposed electrodes formed on either side of the piezoelectric wafer, said apparatus comprising: a mask having a pliant material thereon; means for urging the mask into intimate contact with the wafer to expose a selected electrode while forming a pliant interface between the mask and the wafer; means for depositing a material through the mask onto the selected electrode, intimate contact between the mask and the wafer restricting deposition of the material to the electrode; means for exciting the resonator to resonance while the material is deposited on the selected electrode, the pliant interface between the mask and the wafer permitting substantially free vibration of the excited resonator with the mask in intimate contact with the wafer; means for monitoring the resonant frequency of the excited resonator while the material is being deposited on the selected electrode; and means responsive to the monitoring means for stopping deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 18
Independent Claim
184 words
An apparatus for adjusting the frequency of a resonator, formed on a piezoelectric wafer, to a predetermined resonant frequency, said resonator including two mutually opposed electrodes formed on either side of the piezoelectric wafer, said apparatus comprising: a mask having a pliant material thereon; means for urging the mask into intimate contact with the wafer to expose a selected electrode while forming a pliant interface between the mask and the wafer; means for depositing a material through the mask onto the selected electrode, intimate contact between the mask and the wafer restricting deposition of the material to the electrode; means for exciting the resonator to resonance while the material is deposited on the selected electrode, the pliant interface between the mask and the wafer permitting substantially free vibration of the excited resonator with the mask in intimate contact with the wafer; means for monitoring the resonant frequency of the excited resonator while the material is being deposited on the selected electrode; and means responsive to the monitoring means for stopping deposition of the material when a predetermined resonant frequency of the resonator is obtained.
Claim 19
Dependent Claim
23 words
In the apparatus as set forth in claim 9 wherein the material deposited through the mask onto the selected electrode is a metal.
Claim 20
Dependent Claim
192 words
Apparatus for adjusting the frequency response of a plurality of monolithic crystal filters in a vacuum chamber, without breaking the vacuum, comprising: a metal evaporant source; a mask, having a pliant, insulative coating thereon, in intimate contact with all the filters, having a plurality of apertures which expose at least one electrode of each resonator of every filter; a crystal holding fixture to support the mask and filters; a chimney, mounted within the chamber, having a first end proximate the metal evporant source; means for supporting and indexing the crystal holding fixture above a second end of the chimney to sequentially present the exposed electrodes thereto; means for exciting the resonators; means for measuring the frequency of each excited resonator as the metal evaporant flows through the chimney onto the exposed electrode; means for stopping the flow of evaporant, in response to the measuring means when a predetermined resonant frequency has been attained; and means for controlling the operation of the supporting and indexing means to sequentially present all the exposed electrodes to the evaporant to sequentially adjust all the resonators of all the filters to predetermined frequencies without breaking the vacuum.
Claim 21
Dependent Claim
192 words
Apparatus for adjusting the frequency response of a plurality of monolithic crystal filters in a vacuum chamber, without breaking the vacuum, comprising: a metal evaporant source; a mask, having a pliant, insulative coating thereon, in intimate contact with all the filters, having a plurality of apertures which expose at least one electrode of each resonator of every filter; a crystal holding fixture to support the mask and filters; a chimney, mounted within the chamber, having a first end proximate the metal evporant source; means for supporting and indexing the crystal holding fixture above a second end of the chimney to sequentially present the exposed electrodes thereto; means for exciting the resonators; means for measuring the frequency of each excited resonator as the metal evaporant flows through the chimney onto the exposed electrode; means for stopping the flow of evaporant, in response to the measuring means when a predetermined resonant frequency has been attained; and means for controlling the operation of the supporting and indexing means to sequentially present all the exposed electrodes to the evaporant to sequentially adjust all the resonators of all the filters to predetermined frequencies without breaking the vacuum.
Claim 22
Dependent Claim
97 words
The apparatus for adjusting the frequency of a plurality of monolithic crystal filters as set forth in claim 11, wherein the crystal holding fixture comprises: an upper plate; a lower plate having a plurality of holes which are aligned with the exposed electrodes of each filter; and a plurality of spring biased electrical contacts extending through the upper plate, having first ends connected to the measuring means and second ends that connect to the electrodes of the filters, which urge the filters into intimate contact with the mask when the upper and lower plates are fastened together.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-03 | 1978-08-05 | 1979-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-03 | 1982-08-05 | 1983-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-03 | 1986-08-05 | 1987-02-04 | $7700.00 | Window Closed / Lapsed |