US3861024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and methods of making the same
Assignee: RCA Corp
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Filing: 1973-04-12
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Granted: 1975-01-21
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Expires: 1993-04-12
Abstract
Abstract A semiconductor device having at least two contacts on a body of semiconductor material. One of the contacts is in a plane spaced from the plane of the other contacts and the edges of the one contact are in substantial alignment with the adjacent edges of the other contacts. The material under either the edges of the one contact or the adjacent edges of the other contacts is removed so that such edges project in cantilever fashion beyond the material under the respective contact.
Inventors
- 👤 Louis Sebastian Napoli
- 👤 Walter Francis Reichert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:52
CPC Classifications
H; H10; H10D; H10D99/00; H10D64/00; H10D64/20; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/139; Y10S148/143; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
142 words
A METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF A. PROVIDING ON A SURFACE OF A BODY WHICH IS AT LEAST PARTIALLY OF SEMICONDUCTOR MATERIAL A METALLIC LAYER OF AN AREA SMALLER THAN THE AREA OF SAID SURFACE AND HAVING AN EDGE SPACED FROM AN EDGE OF SAID SURFACE, B. REMOVING A PORTION OF THE MATERIAL OF THE BODY WHICH IS AT SAID SURFACE AND IS ALONG SAID EDGE OF THE LAYER AND FROM UNDER SAID EDGE TO PROVIDE A SECOND SURFACE WHICH IS SPACED FROM THE FIRST SAID SURFACE WITH THE EDGE OF SAID LAYER OVERHANGING SAID SECOND SURFACE, AND C. DEPOSITING A METAL FILM ON SAID SECOND SURFACE WHILE MASKING THE PORTION OF SAID SECOND SURFACE UNDER THE OVERHANGING EDGE OF SAID LAYER SO THAT THE DEPOSITED METAL FILM EXTENDS ONLY UP TO SAID EDGE OF SAID LAYER.
Claim 2
Independent Claim
142 words
A METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF A. PROVIDING ON A SURFACE OF A BODY WHICH IS AT LEAST PARTIALLY OF SEMICONDUCTOR MATERIAL A METALLIC LAYER OF AN AREA SMALLER THAN THE AREA OF SAID SURFACE AND HAVING AN EDGE SPACED FROM AN EDGE OF SAID SURFACE, B. REMOVING A PORTION OF THE MATERIAL OF THE BODY WHICH IS AT SAID SURFACE AND IS ALONG SAID EDGE OF THE LAYER AND FROM UNDER SAID EDGE TO PROVIDE A SECOND SURFACE WHICH IS SPACED FROM THE FIRST SAID SURFACE WITH THE EDGE OF SAID LAYER OVERHANGING SAID SECOND SURFACE, AND C. DEPOSITING A METAL FILM ON SAID SECOND SURFACE WHILE MASKING THE PORTION OF SAID SECOND SURFACE UNDER THE OVERHANGING EDGE OF SAID LAYER SO THAT THE DEPOSITED METAL FILM EXTENDS ONLY UP TO SAID EDGE OF SAID LAYER.
Claim 3
Dependent Claim
41 words
A method in accordance with claim 1 in which the metal film is deposited on said second surface while shadow masking the portion of the second surface under the overhanging edge of said layer with the overhanging edge of said layer.
Claim 4
Dependent Claim
17 words
A method in accordance with claim 2 in which the metal film is deposited by vacuum evaporation.
Claim 5
Dependent Claim
37 words
A method in accordance with claim 1 in which the metal film is deposited on said second surface while masking the portion of said second surface under the overhanging edge of said layer with a resist material.
Claim 6
Dependent Claim
23 words
A method in Accordance with claim 1 in which the portion of the material at the first said surface is removed by etching.
Claim 7
Dependent Claim
34 words
A method in accordance with claim 5 in which the metallic layer and the first said surface on which the metallic layer is provided is a surface of a semiconductor portion of said body.
Claim 8
Dependent Claim
65 words
A method in accordance with claim 5 in which the body includes a layer of an electrical insulating material on the semiconductor material portion with the surface of the insulating layer being the first said surface, and the portion of the insulating material layer which is removed is removed to the semiconductor body so that the material of the body forms the second said surface.
Claim 9
Dependent Claim
23 words
A method in accordance with claim 7 in which the layer is metal film deposited on the surface of the insulating material layer.
Claim 10
Dependent Claim
47 words
A method in accordance with claim 7 in which the layer on the insulating material layer is of an electrical insulating material which is different from that of the underlying layer and which will not be attacked by an etchant for the material of the underlying layer.
Claim 11
Independent Claim
128 words
A method of making semiconductor device comprising the steps of a. coating the surface of a body semiconductor material with a metal layer, b. removing an elongated narrow portion of said metal layer to provide a pair of spaced contacts with the surface of the body between the contacts being exposed, c. forming a recess in the exposed surface of the body with the recess extending slightly under the adjacent edges of the contacts so that the adjacent edges of the contacts overhang the recess, and then d. depositing a metal film contact on the bottom of the recess while masking the portions of the recess under the overhanging edges of the contacts so that the metal film extends up to substantially the adjacent edges of the contacts.
Claim 12
Independent Claim
128 words
A method of making semiconductor device comprising the steps of a. coating the surface of a body semiconductor material with a metal layer, b. removing an elongated narrow portion of said metal layer to provide a pair of spaced contacts with the surface of the body between the contacts being exposed, c. forming a recess in the exposed surface of the body with the recess extending slightly under the adjacent edges of the contacts so that the adjacent edges of the contacts overhang the recess, and then d. depositing a metal film contact on the bottom of the recess while masking the portions of the recess under the overhanging edges of the contacts so that the metal film extends up to substantially the adjacent edges of the contacts.
Claim 13
Dependent Claim
39 words
A method in accordance with claim 10 in which the metal film is deposited by vacuum evaporation while shadow masking the portions of the recess under the overhanging edges of the contacts with the overhanging edges of the contacts.
Claim 14
Dependent Claim
40 words
A method in accordance with claim 10 in which the metal film contact is deposited on the bottom surface of the recess while masking the portions of the recess under the overhanging edges of the contacts with a resist material.
Claim 15
Dependent Claim
22 words
A method in accordance with claim 10 in which the recess is formed by etching away the exposed surface of the body.
Claim 16
Independent Claim
170 words
A method of making a semiconductor device comprising the steps of a. coating the surface of a body of semiconductor material with a first layer of an electrical insulating material, b. providing on a portion of the surface of the first layer a second layer of metallic material having spaced edges and being positioned so that the first layer extends beyond said edges of the second layer. c. removing the portions of said first layer which extend beyond the edges of the second layer and from under the said edges of the second layer so as to expose the surface of the body along the edges of the second layer, and d. depositing metal film contacts on the exposed surfaces of the body along the edges of the second layer while masking the edges of the first layer and any of the exposed surface of the body under the edges of the second layer so that the metal film contacts extend up to substantially the edges of the second layer.
Claim 17
Independent Claim
170 words
A method of making a semiconductor device comprising the steps of a. coating the surface of a body of semiconductor material with a first layer of an electrical insulating material, b. providing on a portion of the surface of the first layer a second layer of metallic material having spaced edges and being positioned so that the first layer extends beyond said edges of the second layer. c. removing the portions of said first layer which extend beyond the edges of the second layer and from under the said edges of the second layer so as to expose the surface of the body along the edges of the second layer, and d. depositing metal film contacts on the exposed surfaces of the body along the edges of the second layer while masking the edges of the first layer and any of the exposed surface of the body under the edges of the second layer so that the metal film contacts extend up to substantially the edges of the second layer.
Claim 18
Dependent Claim
44 words
A method in accordance with claim 14 in which the second layer is of a material which is not attacked by an etchant for the insulating material of the first and the portions of the first layer are removed by etching away said portions.
Claim 19
Dependent Claim
44 words
A method in accordance with claim 15 in which the second layer is of an electrical insulating material and a metal film is deposited on said second layer simultaneously with the depositing of the metal film contacts on the exposed surface of the body.
Claim 20
Dependent Claim
57 words
A method in accordance with claim 16 in which prior to depositing the metal film contacts low resistivIty source and drain regions are formed in the body at the exposed portions of the surface of the body along the edges of the second layer and the metal film contacts are deposited over said source and drain regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-01-20 | 1978-07-22 | 1979-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-01-20 | 1982-07-22 | 1983-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-01-20 | 1986-07-22 | 1987-01-21 | $7700.00 | Window Closed / Lapsed |