US3860835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Anti-compromise microelectronic circuit
Assignee: United States Department of the Navy
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Filing: 1971-02-10
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Granted: 1975-01-14
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Expires: 1991-02-10
Abstract
Abstract A thin film microelectronic anti-compromise or destructible circuit module having a palladium-aluminum-palladium thin film conducting sandwich vacuum deposited on a microelectronic substrate over which an electrical insulating material and microelectronic circuits are thin film deposited, in that order, with the destructive film sandwich coupled to a voltage pulse source to optionally energize the sandwich to destroy the microelectronic circuits by eutectic reaction.
Inventors
- 👤 Barbara J Brymer
- 👤 Edward J Kapp
- 👤 Frank Z Keister
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:47
CPC Classifications
H; H10; H10N; H10N97/00; H03; H03K; H03K19/00; H03K19/02; H03K19/16; H03K19/168; Y; Y10; Y10S; Y10S257/00; Y10S257/922
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
95 words
An anti-compromise thin film circuit module comprising: an insulative material substrate for thin film circuitry; a destructive film sandwich of aluminum thin film in between thin film layers of palladium vacuum deposited on said substrate; an electrical insulating thin film vacuum deposited on said destructive film; a thin film circuit vacuum deposited on said insulating film; and a switched voltage pulsed circuit coupled across said destructive film sandwich whereby switch closing of said voltage pulsed circuit will produce a eutectic reaction which will destroy said insulating film and thin film circuit beyond recognition or use.
Claim 2
Dependent Claim
95 words
An anti-compromise thin film circuit module comprising: an insulative material substrate for thin film circuitry; a destructive film sandwich of aluminum thin film in between thin film layers of palladium vacuum deposited on said substrate; an electrical insulating thin film vacuum deposited on said destructive film; a thin film circuit vacuum deposited on said insulating film; and a switched voltage pulsed circuit coupled across said destructive film sandwich whereby switch closing of said voltage pulsed circuit will produce a eutectic reaction which will destroy said insulating film and thin film circuit beyond recognition or use.
Claim 3
Dependent Claim
50 words
An anti-compromise thin film circuit module as set forth in claim 1 wherein said destructive thin film sandwich has an etched circuit pattern to lie under strategic thin film circuit portions, the aluminum thin film being approximately equal by volume with the two outer sandwich thin film layers of palladium.
Claim 4
Dependent Claim
36 words
An anti-compromise thin film circuit module as set forth in claim 2 wherein said aluminum thin film layer is approximately 7,000 angstroms thick and each of said two palladium thin layers are approximately 3,400 angstroms thick.
Claim 5
Dependent Claim
37 words
An anti-compromise thin film circuit module as set forth in claim 3 wherein said thin film circuit is etched into the desired circuit pattern overlying said destructive film sandwich pattern, said thin film circuit being of nichrome.
Claim 6
Dependent Claim
20 words
An anti-compromise thin film circuit module as set forth in claim 4 wherein said insulating thin film is silicon monoxide.
Claim 7
Independent Claim
178 words
A METHOD OF PRODUCING AN ANTI-COMPROMISE THIN FILM CIRCUIT MODULE COMPRISING: VACUUM DEPOSITING A FIRST THIN FILM OF PALLADIUM THROUGH A STAINLESS STEEL MASK OF PARALLEL STRIPS ON A FACE OF ELECTRICAL INSULATING SUBSTRATE MATERIAL; VACUUM DEPOSITING A THIN FILM OF ALUMINUM THROUGH SAID STAINLESS STEEL MASK ONTO SAID FIRST THIN FILM OF PALLADIUM; VACUUM DEPOSITING A SECOND THIN FILM OF PALLADIUM THROUGH SAID STAINLESS STEEL MASK TO ACHIEVE A SANDWICH OF DESTRUCTIVE THIN FILMS OF SAID SUBSTRATE; VACUUM DEPOSITING A THIN FILM OF ELECTRICAL INSULATING MATERIAL OVER SAID DESTRUCTIVE THIN FILM SANDWICH THROUGH A METAL MASK; VACUUM DEPOSITING A THIN FILM OF NICHROME THROUGH A METAL MASK OVER SAID INSULATING FILM AND PHOTO-ETCHING A CIRCUIT PATTERN THEREIN; VACUUM DEPOSITING ALUMINUM AND NICHROME CONNECTOR PADS TO SAID ALUMINUM AND NICHROME THIN FILM LAYERS THROUGH METAL MASKS, RESPECTIVELY; AND VACUUM DEPOSITING LEADS OF KOVAR AND GOLD WIRE TO SAID PADS ADAPTED FOR CONNECTING A PULSED VOLTAGE TO SAID ALUMINUM OF SAID DESTRUCTIVE FILM AND A CIRCUIT TO SAID NICHROME FILM WHEREBY A DESTRUCTIVE THIN FILM CIRCUIT MODULE IS PRODUCED.
Claim 8
Independent Claim
178 words
A METHOD OF PRODUCING AN ANTI-COMPROMISE THIN FILM CIRCUIT MODULE COMPRISING: VACUUM DEPOSITING A FIRST THIN FILM OF PALLADIUM THROUGH A STAINLESS STEEL MASK OF PARALLEL STRIPS ON A FACE OF ELECTRICAL INSULATING SUBSTRATE MATERIAL; VACUUM DEPOSITING A THIN FILM OF ALUMINUM THROUGH SAID STAINLESS STEEL MASK ONTO SAID FIRST THIN FILM OF PALLADIUM; VACUUM DEPOSITING A SECOND THIN FILM OF PALLADIUM THROUGH SAID STAINLESS STEEL MASK TO ACHIEVE A SANDWICH OF DESTRUCTIVE THIN FILMS OF SAID SUBSTRATE; VACUUM DEPOSITING A THIN FILM OF ELECTRICAL INSULATING MATERIAL OVER SAID DESTRUCTIVE THIN FILM SANDWICH THROUGH A METAL MASK; VACUUM DEPOSITING A THIN FILM OF NICHROME THROUGH A METAL MASK OVER SAID INSULATING FILM AND PHOTO-ETCHING A CIRCUIT PATTERN THEREIN; VACUUM DEPOSITING ALUMINUM AND NICHROME CONNECTOR PADS TO SAID ALUMINUM AND NICHROME THIN FILM LAYERS THROUGH METAL MASKS, RESPECTIVELY; AND VACUUM DEPOSITING LEADS OF KOVAR AND GOLD WIRE TO SAID PADS ADAPTED FOR CONNECTING A PULSED VOLTAGE TO SAID ALUMINUM OF SAID DESTRUCTIVE FILM AND A CIRCUIT TO SAID NICHROME FILM WHEREBY A DESTRUCTIVE THIN FILM CIRCUIT MODULE IS PRODUCED.
Claim 9
Dependent Claim
58 words
A method of producing an anti-compromise thin film circuit module as set forth in claim 6 wherein said vacuum depositing of said first and third layers of palladium is continued until said layers are each about 3,400 angstroms thick and said vacuum depositing of said aluminum layer is continued until said aluminum layer is about 7,000 angstroms thick.
Claim 10
Dependent Claim
44 words
A method of producing an anti-compromise thin film circuit module as set forth in claim 7 wherein said vacuum depositing of said aluminum and nichrome includes vacuum depositing connector pads thereto, respectively, and vacuum depositing chromium-gold over said pads to provide durable connection area.
Claim 11
Dependent Claim
36 words
A method of producing an anti-compromise thin film circuit module as set forth in claim 8 wherein said vacuum depositing of said nichrome is continued until the resistance thereof reaches approximately 200 ohms per square inch.
References Cited (Backward Citations)
US3394218A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-01-13 | 1978-07-15 | 1979-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-01-13 | 1982-07-15 | 1983-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-01-13 | 1986-07-15 | 1987-01-14 | $7700.00 | Window Closed / Lapsed |