Abstract This Specification describes the method and apparatus for the exposure of sensitive resists by the use of closely scanned rasters described by a focussed electron beam. Variation in the line width is used to produce different raster shapes as required. A succession of similar rasters can be described spaced over a semiconductor wafer for the purpose of producing the patterning required for the production of a plurality of similar semiconductor devices on the single wafer. A technique for aligning the wafer with the scan of the electron beam is described using markers distributed over the surface of the wafer there being one marker for each small raster to be described by the beam from the wafer; one alignment system using a cathode-ray tube display of the images of the reference marker magnified and placed closed together on the screen so that errors in alignment can readily be detected.
A system for aligning a semiconductor slice having a selectively positioned reference alignment pattern and an electron-sensitive film thereon, by consecutively exposing a plurality of patterns in said electron-sensitive film, comprising: a. means for generating an electron beam focused on said film b. electron beam deflection control means for sequentially step scanning the electron beam in an uninterrupted sequence over said electron-sensitive film in a pattern corresponding with said reference alignment pattern; c. means responsive to said scanning of the electron beam to generate positional data signals corresponding to said scanned pattern and said alignment marker pattern; d. means responsive to said positional data signals to generate error data indicating positional errors of said scanned patterns relative to said alignment marker pattern for enabling the said scanned patterns and said alignment marker pattern to be brought into alignment.
Claim 2
Independent Claim
138 words
A system for aligning a semiconductor slice having a selectively positioned reference alignment pattern and an electron-sensitive film thereon, by consecutively exposing a plurality of patterns in said electron-sensitive film, comprising: a. means for generating an electron beam focused on said film b. electron beam deflection control means for sequentially step scanning the electron beam in an uninterrupted sequence over said electron-sensitive film in a pattern corresponding with said reference alignment pattern; c. means responsive to said scanning of the electron beam to generate positional data signals corresponding to said scanned pattern and said alignment marker pattern; d. means responsive to said positional data signals to generate error data indicating positional errors of said scanned patterns relative to said alignment marker pattern for enabling the said scanned patterns and said alignment marker pattern to be brought into alignment.
Claim 3
Dependent Claim
56 words
The system as set forth in claim 1: and including a. display means for simultaneously displaying images of a plurality of marks of said alignment marker pattern and of said scanned patterns; and b. manually operable means for controlling the said electron beam deflection means to align said scanned patterns relative to said alignment marker pattern.
Claim 4
Dependent Claim
43 words
A system as set forth in claim 2, wherein said display means is adapted to display magnified images of said plurality of alignment marks and of said scanned areas in a relatively closely spaced configuration thereby to emphasize any errors in alignment thereof.
Claim 5
Dependent Claim
49 words
A system as set forth in claim 1, including means for sequentially step scanning said electron beam in an uninterrupted sequence following said alignment step over a plurality of discrete rasters of the electron-sensitive film such that said discrete rasters are precisely positioned relative to said alignment marker pattern.