US3856472A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for the gettering of semiconductors
Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1972-12-19
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Granted: 1974-12-24
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Expires: 1992-12-19
Abstract
Abstract A process for the gettering of semi-conductors wherein the semiconductors are placed between and in contact with solid bodies selected from the group consisting of quartz glass, silicon nitride and boron nitride which are then heated to a gettering temperature preferably between 1,000*C and 1,200*C. The heating is preferably carried out under a vacuum or in the presence of an inert atmosphere. When boron nitride is used for the solid bodies, the process can serve simultaneously for also producing the desired doping characteristic within the semi-conductor.
Inventors
- 👤 S Schweitzer
- 👤 G Ziffermayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:00
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/14; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/06; Y10S148/113; Y10S148/114
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
98 words
A SEMI-CONDUCTOR GETTERING ASSEMBLY COMPRISING A STACK OF SEMI-CONDUCTOR DISCS SEPARATED FROM EACH OTHER BY DISCS OF THE SAME SIZE INTERPOSED RESPETIVELY THEREBETWEEN MADE FROM A GETTER MATERIAL AND WHICH LIE IN CONTACT WITH THE FACES OF SAID SEMI-CONDUCTOR DISCS, SAID GETTER MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF QUARTZ GLASS, SILICON NITRIDE AND BORON NITRIDE, AND A STRUCTURE MADE OF THE SAME MATERIAL AS SAID GETTER DISCS SUPPORTING SAID STACKED DISC COMPRISING A BASE PLATE AND AT LEAST THREE UPSTANDING RODS THEREON DISTRIBUTED ABOUT A VERTICAL AXIS WHICH SURROUND AND ENGAGE THE PERIPHERY OF THE DISCS.
Claim 2
Dependent Claim
98 words
A SEMI-CONDUCTOR GETTERING ASSEMBLY COMPRISING A STACK OF SEMI-CONDUCTOR DISCS SEPARATED FROM EACH OTHER BY DISCS OF THE SAME SIZE INTERPOSED RESPETIVELY THEREBETWEEN MADE FROM A GETTER MATERIAL AND WHICH LIE IN CONTACT WITH THE FACES OF SAID SEMI-CONDUCTOR DISCS, SAID GETTER MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF QUARTZ GLASS, SILICON NITRIDE AND BORON NITRIDE, AND A STRUCTURE MADE OF THE SAME MATERIAL AS SAID GETTER DISCS SUPPORTING SAID STACKED DISC COMPRISING A BASE PLATE AND AT LEAST THREE UPSTANDING RODS THEREON DISTRIBUTED ABOUT A VERTICAL AXIS WHICH SURROUND AND ENGAGE THE PERIPHERY OF THE DISCS.
Claim 3
Dependent Claim
32 words
A semi-conductor gettering assembly as defined in claim 1 wherein said discs made from the getter material have a thickness of between 0.1 and 1.0 mm, preferably between 0.3 and 0.7 mm.
Claim 4
Dependent Claim
43 words
A semi-conductor gettering assembly as defined in claim 2 wherein the opposite faces of said discs made from the getter material have a roughness factor varying between 1 Mu m and 15 Mu m, preferably between 3 Mu m and 7 Mu m.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-23 | 1978-06-24 | 1978-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-23 | 1982-06-24 | 1982-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-23 | 1986-06-24 | 1986-12-24 | $7700.00 | Window Closed / Lapsed |