US3855024A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of vapor-phase polishing a surface of a semiconductor
Assignee: AT&T Inc
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Filing: 1972-11-06
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Granted: 1974-12-17
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Expires: 1992-11-06
Abstract
Abstract A method of vapor-phase polishing a surface of a semiconductor material, selected from the group of semiconductor materials comprising (1) group II-VI compounds, (2) group III-V compounds, (3) mixed II-VI compounds, (4) mixed III-V compounds and (5) group IV elements, is disclosed. The method includes contacting the surface of the substrate, maintained at a suitable temperature with a gaseous mixture comprising a carrier gas, e.g., hydrogen, and water for a period of time sufficient to polish the surface.
Inventors
- 👤 M Lim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:53
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/246; H10P52/00; H10P90/00; H10P90/12; H10P90/126; H10P95/00; H10P95/70
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
48 words
A METHOD OF POLISHING A SURFACE OF A SUBSTRATE COMPRISING A SEMICONDUCTOR MATERIAL, WHICH COMPRISES, CONTACTING THE SURFACE OF THE SUBSTRATE, MAINTAINED AT A SUITABLE TEMPERATURE, WITH A GASEOUS MIXTURE COMPRISING A CARRIER GAS AND WATER VAPOR FOR A PERIOD OF TIME SUFFICIENT TO POLISH THE SURFACE .
Claim 2
Independent Claim
48 words
A METHOD OF POLISHING A SURFACE OF A SUBSTRATE COMPRISING A SEMICONDUCTOR MATERIAL, WHICH COMPRISES, CONTACTING THE SURFACE OF THE SUBSTRATE, MAINTAINED AT A SUITABLE TEMPERATURE, WITH A GASEOUS MIXTURE COMPRISING A CARRIER GAS AND WATER VAPOR FOR A PERIOD OF TIME SUFFICIENT TO POLISH THE SURFACE .
Claim 3
Dependent Claim
14 words
The method as defined in claim 1 wherein the substrate comprises single crystal GaP.
Claim 4
Dependent Claim
21 words
The method as defined in claim 2 wherein said GaP substrate is maintained at a temperature ranging from 800*C to 1,350*C.
Claim 5
Dependent Claim
47 words
The method as defined in claim 2, wherein: said substrate is maintained at a temperature of about 1,050*C; and said gaseous mixture, at a pressure of 760 mm Hg, comprises from about 0.286 mm Hg to about 11.23 mm Hg of water vapor and remainder carrier gas.
Claim 6
Independent Claim
57 words
A method of improving the quality of a surface of a substrate comprising GaP, which comprises: a. heating the substrate to a temperature ranging from about 800*C to about 1,350*C; and b. exposing said heated surface to a gaseous mixture comprising a carrier gas and water, for a period of time sufficient to react with the surface.
Claim 7
Independent Claim
57 words
A method of improving the quality of a surface of a substrate comprising GaP, which comprises: a. heating the substrate to a temperature ranging from about 800*C to about 1,350*C; and b. exposing said heated surface to a gaseous mixture comprising a carrier gas and water, for a period of time sufficient to react with the surface.
Claim 8
Dependent Claim
41 words
The method as defined in claim 5 wherein: said temperature is about 1,050*C; and said gaseous mixture, at a pressure of 760 mm Hg, comprises from about 0.286 mm Hg to about 11.23 mm Hg of water vapor and remainder hydrogen.
Claim 9
Independent Claim
38 words
A method of rendering a surface of a semiconductor material, comprising single crystal GaP, relatively impurity free, which comprises, contacting the surface maintained at a suitable temperature, with a gaseous mixture comprising a carrier gas and water vapor.
Claim 10
Independent Claim
38 words
A method of rendering a surface of a semiconductor material, comprising single crystal GaP, relatively impurity free, which comprises, contacting the surface maintained at a suitable temperature, with a gaseous mixture comprising a carrier gas and water vapor.
Claim 11
Dependent Claim
22 words
The method as defined in claim 7 wherein: said surface is maintained at a temperature ranging from about 800*C to about 1,350*C.
References Cited (Backward Citations)
US2802760A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-16 | 1978-06-17 | 1978-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-16 | 1982-06-17 | 1982-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-16 | 1986-06-17 | 1986-12-17 | $7700.00 | Window Closed / Lapsed |