US3852612A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors
Assignee: Westinghouse Electric Corp
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Filing: 1974-02-01
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Granted: 1974-12-03
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Expires: 1994-02-01
Abstract
Abstract The blocking voltage capability of PN junctioned semiconductor devices selected from transistors and thyristors is increased, while maintaining the forward voltage drop capability, by selectively irradiating with low level irradiation corresponding to an exposure of less than 1 X 1013 electrons/cm2 with 2 Mev electron radiation. The devices are preferably irradiated with electron radiation of an intensity greater than 1 Mev and most desirably 2 Mev to an electron exposure below 1 X 1013 electrons/cm2.
Inventors
- 👤 J Roberts
- 👤 M Cresswell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:03
CPC Classifications
H; H10; H10P; H10P95/00; H10P34/00; H10P34/40
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
89 words
A method of increasing the blocking voltage of certain semiconductor devices without significantly increasing the forward voltage drop comprising the steps of: a. positioning a semiconductor body containing the semiconductor device with a major surface of the body to be exposed to a radiation source; b. thereafter increasing the blocking voltage of the semiconductor device without significantly increasing the forward voltage drop by selectively irradiating the semiconductor body to a low level of exposure corresponding to an exposure of less than 1 X 1013 electrons/cm2 with 2-Mev electron radiation.
Claim 2
Independent Claim
89 words
A method of increasing the blocking voltage of certain semiconductor devices without significantly increasing the forward voltage drop comprising the steps of: a. positioning a semiconductor body containing the semiconductor device with a major surface of the body to be exposed to a radiation source; b. thereafter increasing the blocking voltage of the semiconductor device without significantly increasing the forward voltage drop by selectively irradiating the semiconductor body to a low level of exposure corresponding to an exposure of less than 1 X 1013 electrons/cm2 with 2-Mev electron radiation.
Claim 3
Dependent Claim
32 words
A method of increasing the blocking voltage of certain junctioned semiconductor devices without significantly increasing the forward voltage drop as set forth in claim 1 wherein: the radiation source is electron radiation.
Claim 4
Dependent Claim
35 words
A method of increasing the blocking voltage of certain junctioned semiconductor devices without significantly increasing the forward voltage drop as set forth in claim 2 wherein: the electron radiation has an intensity greater than 1-Mev.
Claim 5
Dependent Claim
40 words
A method of increasing the blocking voltage of certain junctioned semiconductor devices withoUt significantly increasing the forward voltage drop as set forth in claim 3 wherein: the irradiation is to a level of exposure greater than 1 X 1012 electrons/cm2.
References Cited (Backward Citations)
US3691376A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-02 | 1978-06-03 | 1978-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-02 | 1982-06-03 | 1982-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-02 | 1986-06-03 | 1986-12-03 | $7700.00 | Window Closed / Lapsed |