US3852171A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing tantalum-oxide semiconductor capacitors
Assignee: Individual
•
Filing: 1973-10-12
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Granted: 1974-12-03
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Expires: 1993-10-12
Abstract
Abstract A process is disclosed for manufacturing tantalum-oxide semiconductor capacitors comprising forming a tantalum oxide layer on a tantalum substrate by electrochemically oxidizing it in an aqueous manganese salt solution and depositing a semiconductive manganese oxide layer over the tantalum oxide layer in the same electrolyte under potentiostatic conditions, followed by applying a cnducting coating onto the manganese oxide layer.
Inventors
- 👤 A Voronkov
- 👤 G Turchaninov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:44
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/0029; H01G9/0032
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
107 words
A PROCESS FOR MANUFACTURING TANTALUM-OXIDE SEMICONDUCTOR CAPACITORS COMPRISING; FORMING A TANTALUM OXIDE LAYER ON A TANTALUM SUBSTRATE BY ELECTROCHEMICAL OXIDIZATION MEANS INCLUDING AN ELECTROLYTIC BATH CONTAINING AN AQUEOUS MANGANESE SALT SOLUTION WITH A CURRENT FLOWING THROUGH THE ELECTROLYTIC BATH SUFFICIENT TO PROVIDE A VOLTAGE ACROSS SAID BATH 2 TO 3 TIMES GREATER THAN THE RATED VOLTAGE OF THE CAPACITOR TO BE MANUFACTURED; FORMING A SEMICONDUCTIVE MANGANESE OXIDE LAYER ON SAID TANTALUM OXIDE LAYER WHEN SAID VOLTAGE HAS BEEN ACHIEVED BY DEPOSITING MANGANESE OXIDE THEREON IN SAID ELECTROLYTIC BATH CONTAINING SAID AQUEOUS MANGANESE SALT SOLUTION UNDER POTENTIOSTATIC CONDITIONS; APPLYING A CONDUCTING COATING ONTO SAID SEMICONDUCTIVE MANGANESE OXIDE LAYER.
Claim 2
Dependent Claim
107 words
A PROCESS FOR MANUFACTURING TANTALUM-OXIDE SEMICONDUCTOR CAPACITORS COMPRISING; FORMING A TANTALUM OXIDE LAYER ON A TANTALUM SUBSTRATE BY ELECTROCHEMICAL OXIDIZATION MEANS INCLUDING AN ELECTROLYTIC BATH CONTAINING AN AQUEOUS MANGANESE SALT SOLUTION WITH A CURRENT FLOWING THROUGH THE ELECTROLYTIC BATH SUFFICIENT TO PROVIDE A VOLTAGE ACROSS SAID BATH 2 TO 3 TIMES GREATER THAN THE RATED VOLTAGE OF THE CAPACITOR TO BE MANUFACTURED; FORMING A SEMICONDUCTIVE MANGANESE OXIDE LAYER ON SAID TANTALUM OXIDE LAYER WHEN SAID VOLTAGE HAS BEEN ACHIEVED BY DEPOSITING MANGANESE OXIDE THEREON IN SAID ELECTROLYTIC BATH CONTAINING SAID AQUEOUS MANGANESE SALT SOLUTION UNDER POTENTIOSTATIC CONDITIONS; APPLYING A CONDUCTING COATING ONTO SAID SEMICONDUCTIVE MANGANESE OXIDE LAYER.
Claim 3
Dependent Claim
19 words
A process for manufacturing tantalum-oxide semiconductor capacitors as claimed in claim 1, wherein said manganese salt is manganese nitrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-02 | 1978-06-03 | 1978-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-02 | 1982-06-03 | 1982-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-02 | 1986-06-03 | 1986-12-03 | $7700.00 | Window Closed / Lapsed |