Raster pattern magnetoresistors

Claim 1

A HIGH SENSITIVITY RASTER PATTERN MAGNETORESISTOR DEVICE WHOSE RESISTANCE SHOWS A STRONG VARIATION WITH MAGNETIC FIELD, COMPRISING: A. A NON-CONDUCTING SUBSTRATE, B. AN ELECTRON BEAM MICROZONE-CRYSTALLIZED SEMICONDUCTING THIN FILM HAVING MICROSCOPIC THICKNESS OF FROM 3 TO 5 UM AND SELECTED FROM HE GROUP OF INTERMETALLIC COMPOUNDS CONSISTING OF INSB AND INAS IN A MAGNETORESISTOR PATTERN FORMED ON SAID SUBSTRATE; C. A HIGH DENSITY RASTER PATTERN OF IDENTICAL METALLIC LINES OF MICROSCOPIC THICKNESS ON THE SURFACE OF SAID CONDUCTIG THIN FILM SAID RASTER PATTERN OF METALLIC LINES TOGETHER WITH SAID SEMICONDUCTING THIN FILM PROVIDING A SERIESCONNECTED ARRAY OF IDENTICAL SEMICONDUCTOR PARALLELIPIDEDS WHOSE THICKNESS IS SLIGHT WITH RESPECT TO THEIR OTHER DIEMSIONS SUCH THAT THE SEMICONDUCTING FILM BETWEEN THE METALLIC LINES HAS A SMALL LENGTH TO WIDTH RATIO IN THE DIRECTION OF APPLIED CURRENT AND THE WIDTH OF THE METALLIC LINES IS IDENTICAL WITH THE SPACING BETWEEN SAID LINES; D. SAID METALLIC LINES BEING OF THE ORDER OF 0.5 TO 2.0 UM IN THICKNESS; E. THE INTIAL RESISTANCE OF SAID MAGNETORESISTANCE DEVICE BEING BETWEEN 10 AND 1,000 OHMS WHICH RESISTANCE INCREASES WITH AN APPLIED MAGNETIC FIELD REACHING A VALUE GREATER THAN A FACTOR OF 10 OF THE INITIAL RESISTANCE IN A MAGNETIC FIELD OF 10 KOE, SAID MAGNETORESISTOR ALSO HAVING A LARGE SURFACE-TO-VOLUME RATIO WHICH PROVIDES FOR EFFICIENT THERMAL DISSIPATION OF HEAT FROM THE BODY OF SAID MAGNETORESISTOR TO ITS SURROUNDINGS.