Abstract The method for fabricating a dielectrically isolated semiconductor structure consists of providing a semiconductor body with a first polished planar surface and then covering this polished surface with a protective material which has a substantially uniform thickness over the polished surface. The semiconductor body with the protected polished surface is then mounted on the vacuum chuck assembly with the polished surface facing the vacuum chuck assembly. The vacuum chuck assembly is then placed in a grinding machine and a second planar surface is provided which is parallel to the first polished surface to provide a semiconductor body of the desired thickness. Conventional steps are thereafter utilized to provide the dielectrically isolated semiconductor structure.
In a method for fabricating a semiconductor structure, providing a semiconductor body, providing a wafer mounting block, placing wax on the wafer mounting block, heating the wafer mounting block to melt the wax, placing the semiconductor body on the wafer mounting block, applying pressure to the semiconductor body to squeeze out excess wax so that a substantially uniform thickness of wax is disposed between the wafer mounting block and the semiconductor body, cooling the wafer mounting block to harden the wax, polishing an exposed surface of the semiconductor body while it is carried by the wafer mounting block to provide a first polished planar surface, removing the semiconductor body from the wafer mounting block, covering said polished surface with a protective material which has a substantially uniform thickness over the polished surface, providing a vacuum chuck and securing the semiconductor body to the vacuum chuck so that the polished surface faces the vacuum chuck with the protective material engaging the vacuum chuck and removing material from the semiconductor body to provide a second planar surface which is spaced from and is parallel to said first polished planar surface.
Claim 2
Dependent Claim
188 words
In a method for fabricating a semiconductor structure, providing a semiconductor body, providing a wafer mounting block, placing wax on the wafer mounting block, heating the wafer mounting block to melt the wax, placing the semiconductor body on the wafer mounting block, applying pressure to the semiconductor body to squeeze out excess wax so that a substantially uniform thickness of wax is disposed between the wafer mounting block and the semiconductor body, cooling the wafer mounting block to harden the wax, polishing an exposed surface of the semiconductor body while it is carried by the wafer mounting block to provide a first polished planar surface, removing the semiconductor body from the wafer mounting block, covering said polished surface with a protective material which has a substantially uniform thickness over the polished surface, providing a vacuum chuck and securing the semiconductor body to the vacuum chuck so that the polished surface faces the vacuum chuck with the protective material engaging the vacuum chuck and removing material from the semiconductor body to provide a second planar surface which is spaced from and is parallel to said first polished planar surface.