US3848328A
Expired / Lapsed
US
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Charge transfer device
Assignee: Sony Corp
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Filing: 1972-12-05
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Granted: 1974-11-19
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Expires: 1992-12-05
Abstract
Abstract An information storage and transfer device which has a plurality of capacitors and switching MOS-FET''s between said capacitors, in which there are a plurality of island areas which serve as source and drain regions of the MOS-FET and which island areas are separated by a plurality of gutters.
Inventors
- 👤 T Ando
- 👤 Y Hirata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 09:58
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/891; H10D84/895; G; G11; G11C; G11C19/00; G11C19/18; G11C19/182; G11C19/184; G11C19/186; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
85 words
THE METHOD OF FORMING A CHARGE TRANSFER DEVICE WHICH INCLUDES: TAKING AN N-TYPE SILICON SUBSTATE; COVERING SAID SUBSTRATE WITH A SILICON NITRIDE LAYER; SELECTIVELY ETCHING AWAY PORTIONS OF SAID SILICON NITRIDE LAYER AND SAID SUBSTRATE TO FORM A PLURALITY OF WINDOWS HAVING BOTTOMS BELOW THE SILICON NITRIDE LAYER, FORMING A FIRST LAYER OF THICK SILICON DIOXIDE BY THERMAL OXIDATION IN SAID WINDOWS, REMOVING THE SILICON NITRIDE LAYER; SELECTIVELY FORMING A P-TYPE LAYER BY DIFFUSION TECHNIQUE TO FORM A PLURALITY OF ISLAND AREAS UNIDIRECTIONALLY ARRAYED, THE
Claim 2
Independent Claim
85 words
THE METHOD OF FORMING A CHARGE TRANSFER DEVICE WHICH INCLUDES: TAKING AN N-TYPE SILICON SUBSTATE; COVERING SAID SUBSTRATE WITH A SILICON NITRIDE LAYER; SELECTIVELY ETCHING AWAY PORTIONS OF SAID SILICON NITRIDE LAYER AND SAID SUBSTRATE TO FORM A PLURALITY OF WINDOWS HAVING BOTTOMS BELOW THE SILICON NITRIDE LAYER, FORMING A FIRST LAYER OF THICK SILICON DIOXIDE BY THERMAL OXIDATION IN SAID WINDOWS, REMOVING THE SILICON NITRIDE LAYER; SELECTIVELY FORMING A P-TYPE LAYER BY DIFFUSION TECHNIQUE TO FORM A PLURALITY OF ISLAND AREAS UNIDIRECTIONALLY ARRAYED, THE
Claim 3
Independent Claim
115 words
The method of forming a charge transfer device which includes: taking an N-type silicon substrate; forming a gate oxide insulator on said substrate; selectively removing said gate insulator to form a plurality of islands, forming double epitaxial layers on the islands of the substrate surface, the first layer being of N-type and the second layer being of P-type, said plurality of island areas located in a line; depositing a final insulating layer on said island layer and said gate oxide layer; and forming a plurality of gate metal layers on the surface of said final insulating layer and each gate metal layers covering an island and overlying a substantial portion of an adjacent P-type layer.
Claim 4
Independent Claim
115 words
The method of forming a charge transfer device which includes: taking an N-type silicon substrate; forming a gate oxide insulator on said substrate; selectively removing said gate insulator to form a plurality of islands, forming double epitaxial layers on the islands of the substrate surface, the first layer being of N-type and the second layer being of P-type, said plurality of island areas located in a line; depositing a final insulating layer on said island layer and said gate oxide layer; and forming a plurality of gate metal layers on the surface of said final insulating layer and each gate metal layers covering an island and overlying a substantial portion of an adjacent P-type layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-18 | 1978-05-20 | 1978-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-18 | 1982-05-20 | 1982-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-18 | 1986-05-20 | 1986-11-19 | $7700.00 | Window Closed / Lapsed |