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US3848261A
Expired / Lapsed
US
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Mos integrated circuit structure
Assignee: Northrop Grumman Space and Mission Systems Corp
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Filing: 1973-11-28
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Granted: 1974-11-12
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Expires: 1993-11-28
Abstract
Abstract In an integrated circuit structure including a MOSFET coupled to a lead sulfide photoconductor, a first metallization level of aluminum is used to provide source and gate contacts. A second metallization level of gold is used to make drain contact and low noise contact to the lead sulfide layer. A heavily doped diffusion layer forms a conductive path for connecting the aluminum in the first metallization level with the gold in the second metallization level while keeping the aluminum and gold physically separate.
Inventors
- 👤 D Romeo
- 👤 N Burcham
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:05
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10P; H10P95/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
260 words
AN INTEGRATED CIRUCIT STRUCTURE, COMPRISING: A SEMICINDUCTOR SUBSTRATE OF ONE SEMICONDUCTIVITY PYPE: FIRST, SECOND AND THIRD DIFFUSED SEMICONDUCTOR REGIONS SPACED FROM EACH OTHER IN SAID SUBSTRATE AND EACH BEING OF OPPOSITE SEMICONDUCTIVITY TYPE RELATIVE TO SAID SUBSTRATE; A FIRST DIELECTRIC LAYER ON SAID SUBSTRATE; A FIRST METALLIZATION OF ALUMINUM ON SAID FIRST DIELECTRIC LAYER AND HAVING A FIRST PORTION EXTENDING THROUGH SAID DIELECTRIC LAYER TO FORM A SOURCE CONTACT WITH SAID FIRST DIFFUSED SEMICONDUCTOR REGION, A SECOND PORTION EXTENDING OVER THE GAP BETWEEN SAID FIRST AND SECOND DIFFUSED SEMICONDUCTOR REGIONS TO FORM A GATE, AND A THIRD PORTION EXTENDING THROUGH SAID DIELECTRIC LAYER TO MAKE OHMIC CONTACT WITH SAID THIRD DIFFUSED SEMICONDUCTOR REGION; A SECOND DIELECTRIC LAYER ON SAID FIRST DIELECTRIC LAYER AND SAID FIRST METALLIZATION LAYER, A SECOND METALLIZATION LAYER OF GOLD ON SAID SECOND DIELECTRIC LAYER AND HVING A FIRST PORTION EXTENDING THROUGH BOTH SAID DIELECTRIC LAYERS TO FORM A DRAIN CONTACT WITH SAID SECOND DIFFUSED SEMICONDUCTOR REGION, A SECOND PORTION SPACED FROM SAID FIRST PORTION THEREOF, AND A THIRD PORTION EXTENDING THROUGH BOTH SAID DIELECTRIC LAYERS AND FORMING OHMIC CONTACT WITH SAID THIRD DIFFUSED SEMICONDUCTOR REGION AT A LOCATION SPACED FROM THE THIRD PORTION OF SAID FIRST METALLIZATION LAYER, SAID THIRD DIFFUSED SEMICONDUCTOR REGION FORMING A CONDUCTIVE PATH BETWEEN THE RESPECTIVELY; AND A LAYER OF VARIBLE IMPEDANCE ELECTROMAGNETIC RADIATION RESPECTIVELY; AND RESPEONSIVE DETECTOR MATERIAL ON SAID SECOND DIELECTRIC LAYER EXTENDING BETWEEN SAID FIRST AND SECOND PORTIONS OF SAID SECOND METALLIZATION LAYER AND IN CONTACT THEREWITH, SAID DETECTOR MATERIAL BEING SELECTED FROM THE GROUP DE AND LEAD SELENIDE.
Claim 2
Dependent Claim
260 words
AN INTEGRATED CIRUCIT STRUCTURE, COMPRISING: A SEMICINDUCTOR SUBSTRATE OF ONE SEMICONDUCTIVITY PYPE: FIRST, SECOND AND THIRD DIFFUSED SEMICONDUCTOR REGIONS SPACED FROM EACH OTHER IN SAID SUBSTRATE AND EACH BEING OF OPPOSITE SEMICONDUCTIVITY TYPE RELATIVE TO SAID SUBSTRATE; A FIRST DIELECTRIC LAYER ON SAID SUBSTRATE; A FIRST METALLIZATION OF ALUMINUM ON SAID FIRST DIELECTRIC LAYER AND HAVING A FIRST PORTION EXTENDING THROUGH SAID DIELECTRIC LAYER TO FORM A SOURCE CONTACT WITH SAID FIRST DIFFUSED SEMICONDUCTOR REGION, A SECOND PORTION EXTENDING OVER THE GAP BETWEEN SAID FIRST AND SECOND DIFFUSED SEMICONDUCTOR REGIONS TO FORM A GATE, AND A THIRD PORTION EXTENDING THROUGH SAID DIELECTRIC LAYER TO MAKE OHMIC CONTACT WITH SAID THIRD DIFFUSED SEMICONDUCTOR REGION; A SECOND DIELECTRIC LAYER ON SAID FIRST DIELECTRIC LAYER AND SAID FIRST METALLIZATION LAYER, A SECOND METALLIZATION LAYER OF GOLD ON SAID SECOND DIELECTRIC LAYER AND HVING A FIRST PORTION EXTENDING THROUGH BOTH SAID DIELECTRIC LAYERS TO FORM A DRAIN CONTACT WITH SAID SECOND DIFFUSED SEMICONDUCTOR REGION, A SECOND PORTION SPACED FROM SAID FIRST PORTION THEREOF, AND A THIRD PORTION EXTENDING THROUGH BOTH SAID DIELECTRIC LAYERS AND FORMING OHMIC CONTACT WITH SAID THIRD DIFFUSED SEMICONDUCTOR REGION AT A LOCATION SPACED FROM THE THIRD PORTION OF SAID FIRST METALLIZATION LAYER, SAID THIRD DIFFUSED SEMICONDUCTOR REGION FORMING A CONDUCTIVE PATH BETWEEN THE RESPECTIVELY; AND A LAYER OF VARIBLE IMPEDANCE ELECTROMAGNETIC RADIATION RESPECTIVELY; AND RESPEONSIVE DETECTOR MATERIAL ON SAID SECOND DIELECTRIC LAYER EXTENDING BETWEEN SAID FIRST AND SECOND PORTIONS OF SAID SECOND METALLIZATION LAYER AND IN CONTACT THEREWITH, SAID DETECTOR MATERIAL BEING SELECTED FROM THE GROUP DE AND LEAD SELENIDE.
Claim 3
Dependent Claim
13 words
The invention according to claim 1, wherein said substrate is made of silicon.
Claim 4
Dependent Claim
223 words
An integrated circuit photodetector structure, comprising: a. a semiconductor substrate including therein a MOSFET having a source region and a drain region, and a heavily doped region all spaced from each other; b. a first metallization layer of aluminum insulatingly spaced from the surface of said substrate and including a first volume thereof forming ohmic contact with one of said source and drain regions, a second volume thereof spaced from both said source and drain regions and forming therewith a gate for a MOSFET, and a third volume thereof forming ohmic contact with said heavily doped region; c. a second metallization layer of gold insulatingly spaced from said first metallization layer and including a first volume thereof forming ohmic contact with the other one of said source and drain regions, a second volume thereof spaced from said first volume, and a third volume thereof forming ohmic contact with said heavily doped region at a location spaced from the third volume of said first metallization layer; and d. a layer of detector material selected from the group consisting of lead sulfide and lead selenide bridging the gap between the first and second volumes of said second metallization layer and forming ohmic contact therewith; e. said heavily doped region providing a conductive path between said third volumes of said first and second metallization layers, respectively.
Claim 5
Dependent Claim
223 words
An integrated circuit photodetector structure, comprising: a. a semiconductor substrate including therein a MOSFET having a source region and a drain region, and a heavily doped region all spaced from each other; b. a first metallization layer of aluminum insulatingly spaced from the surface of said substrate and including a first volume thereof forming ohmic contact with one of said source and drain regions, a second volume thereof spaced from both said source and drain regions and forming therewith a gate for a MOSFET, and a third volume thereof forming ohmic contact with said heavily doped region; c. a second metallization layer of gold insulatingly spaced from said first metallization layer and including a first volume thereof forming ohmic contact with the other one of said source and drain regions, a second volume thereof spaced from said first volume, and a third volume thereof forming ohmic contact with said heavily doped region at a location spaced from the third volume of said first metallization layer; and d. a layer of detector material selected from the group consisting of lead sulfide and lead selenide bridging the gap between the first and second volumes of said second metallization layer and forming ohmic contact therewith; e. said heavily doped region providing a conductive path between said third volumes of said first and second metallization layers, respectively.
Claim 6
Dependent Claim
13 words
The invention according to claim 3 wherein said substrate is made of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-11 | 1978-05-13 | 1978-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-11 | 1982-05-13 | 1982-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-11 | 1986-05-13 | 1986-11-12 | $7700.00 | Window Closed / Lapsed |