US3846169A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of treating semiconductor materials consisting of iii-v compounds
Assignee: US Philips Corp
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Filing: 1972-08-14
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Granted: 1974-11-05
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Expires: 1992-08-14
Abstract
Abstract 1. IN A METHOD FOR MAKING OHMIC CONTACT TO THE SURFACE OF A P-TYPE III-V COMPOUND SEMICONDUCTOR CRYSTAL WHEREIN A CONTACT METAL IS VAPOR-DEPOSITED ONTO THE SAID SURFACE TO FORM A SOLID CONTACT, THE IMPROVEMENT COMPRISING BEFORE VAPOR DEPOSITING THE SOLID CONTACT THE SAID SURFACE IS BROUGHT INTO CONTACT WITH LIQUID METAL SELECTED FROM THE GROUP CONSITING OF GALLIUM AND MERCURY AT A RELATIVELY LOW TEMPERATURE, NEXT ANY LIQUID METAL RESIDUE PRESENT IS REMOVED FROM THE SURFACE, AND THEREAFTER THE SAID SOLID CONTACT METAL IS DEPOSITED ON THE SAID SURFACE.
Inventors
- 👤 D Diguet
- 👤 L Henry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 01:40
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
89 words
IN A METHOD FOR MAKING OHMIC CONTACT TO THE SURFACE OF A P-TYPE III-V COMPOUND SEMICONDUCTOR CRYSTAL WHEREIN A CONTACT METAL IS VAPOR-DEPOSITED ONTO THE SAID SURFACE TO FORM A SOLID CONTACT, THE IMPROVEMENT COMPRISING BEFORE VAPOR DEPOSITING THE SOLID CONTACT THE SAID SURFACE IS BROUGHT INTO CONTACT WITH LIQUID METAL SELECTED FROM THE GROUP CONSITING OF GALLIUM AND MERCURY AT A RELATIVELY LOW TEMPERATURE, NEXT ANY LIQUID METAL RESIDUE PRESENT IS REMOVED FROM THE SURFACE, AND THEREAFTER THE SAID SOLID CONTACT METAL IS DEPOSITED ON THE SAID SURFACE.
Claim 2
Dependent Claim
89 words
IN A METHOD FOR MAKING OHMIC CONTACT TO THE SURFACE OF A P-TYPE III-V COMPOUND SEMICONDUCTOR CRYSTAL WHEREIN A CONTACT METAL IS VAPOR-DEPOSITED ONTO THE SAID SURFACE TO FORM A SOLID CONTACT, THE IMPROVEMENT COMPRISING BEFORE VAPOR DEPOSITING THE SOLID CONTACT THE SAID SURFACE IS BROUGHT INTO CONTACT WITH LIQUID METAL SELECTED FROM THE GROUP CONSITING OF GALLIUM AND MERCURY AT A RELATIVELY LOW TEMPERATURE, NEXT ANY LIQUID METAL RESIDUE PRESENT IS REMOVED FROM THE SURFACE, AND THEREAFTER THE SAID SOLID CONTACT METAL IS DEPOSITED ON THE SAID SURFACE.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-04 | 1978-05-06 | 1978-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-04 | 1982-05-06 | 1982-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-04 | 1986-05-06 | 1986-11-05 | $7700.00 | Window Closed / Lapsed |