Abstract 1. AN IMPROVED METHOD OF AMNUFACTURING A THERMOCOMPRESSION CONTACT ON A METAL LAYER OF ALUMINUM CONTACTING THE ZONE OF A PLANAR SEMICONDUCTOR COMPONENT, SAID LAYER DISPOSED IN A PASSIVATING LAYER COVERING THE SURFACE OF SAID SEMICONDUCTOR COMPONENT, WHEREIN A SEMICONDUCTOR SUBSTRATE IS PROVIDED WITH A MASKING LAYER HAVING A WINDOW THEREIN AND A CONTACTING METAL LAYER OVER SAID MASKING LAYER AND THE EXPOSED PORTION OF SAID SUBSTRATE, WHEREIN THE IMPROVEMENT COMPRISES: PROVIDING A DOPED ETCHABLE LAYER OF ALUMINUM OXIDE BY THERMAL OXIDATION OF SAID CONTACTING METAL LAYER; DEPOSITING A PASSIVATING LAYER HAVING A FIRST WINDOW THEREIN OVER SAID ALUMINUM OXIDE LAYER; AND REMOVING THE ALUMINUM OXIDE LAYER BENEATH SAID FIRST WINDOW BY ETCHING.
AN IMPROVED METHOD OF AMNUFACTURING A THERMOCOMPRESSION CONTACT ON A METAL LAYER OF ALUMINUM CONTACTING THE ZONE OF A PLANAR SEMICONDUCTOR COMPONENT, SAID LAYER DISPOSED IN A PASSIVATING LAYER COVERING THE SURFACE OF SAID SEMICONDUCTOR COMPONENT, WHEREIN A SEMICONDUCTOR SUBSTRATE IS PROVIDED WITH A MASKING LAYER HAVING A WINDOW THEREIN AND A CONTACTING METAL LAYER OVER SAID MASKING LAYER AND THE EXPOSED PORTION OF SAID SUBSTRATE, WHEREIN THE IMPROVEMENT COMPRISES: PROVIDING A DOPED ETCHABLE LAYER OF ALUMINUM OXIDE BY THERMAL OXIDATION OF SAID CONTACTING METAL LAYER; DEPOSITING A PASSIVATING LAYER HAVING A FIRST WINDOW THEREIN OVER SAID ALUMINUM OXIDE LAYER; AND REMOVING THE ALUMINUM OXIDE LAYER BENEATH SAID FIRST WINDOW BY ETCHING.
Claim 2
Dependent Claim
112 words
AN IMPROVED METHOD OF AMNUFACTURING A THERMOCOMPRESSION CONTACT ON A METAL LAYER OF ALUMINUM CONTACTING THE ZONE OF A PLANAR SEMICONDUCTOR COMPONENT, SAID LAYER DISPOSED IN A PASSIVATING LAYER COVERING THE SURFACE OF SAID SEMICONDUCTOR COMPONENT, WHEREIN A SEMICONDUCTOR SUBSTRATE IS PROVIDED WITH A MASKING LAYER HAVING A WINDOW THEREIN AND A CONTACTING METAL LAYER OVER SAID MASKING LAYER AND THE EXPOSED PORTION OF SAID SUBSTRATE, WHEREIN THE IMPROVEMENT COMPRISES: PROVIDING A DOPED ETCHABLE LAYER OF ALUMINUM OXIDE BY THERMAL OXIDATION OF SAID CONTACTING METAL LAYER; DEPOSITING A PASSIVATING LAYER HAVING A FIRST WINDOW THEREIN OVER SAID ALUMINUM OXIDE LAYER; AND REMOVING THE ALUMINUM OXIDE LAYER BENEATH SAID FIRST WINDOW BY ETCHING.