Abstract 1. A METHOD FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SEMICONDUCTOR BODY HAVING A REGION OF A FIRST CONDUCTIVITY-TYPE THEREIN ADJACENT ONE SURFACE OF THE BODY, WITH AN INSULATING COATING ON SAID SURFACE; FORMING A COMMUNICATING SLOT IN SAID COATING WHICH EXTENDS TO SAID SURFACE; FORMING A SEMICONDUCTOR LAYER OF SAID FIRST CONDUCTIVITY TYPE IN SAID SLOT WHICH CONTACTS SAID REGION; DIFFUSING IMPURITIES OF SAID ONE CONDUCTIVITY-TYPE INTO SAID SEMICONDUCTOR LAYER SO THAT SAID LAYER IS HIGHLY CONDUCTIVE WITH RESPECT TO SAID REGION; AND DIFFUSING A PLURALITY OF SEGMENTS OF A SECOND CONDUCTIVITY-TYPE INTO SAID REGION FROM SAID SURFACE IS SPACED RELATION TO SAID SEMICONDUCTOR LAYER.
A METHOD FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SEMICONDUCTOR BODY HAVING A REGION OF A FIRST CONDUCTIVITY-TYPE THEREIN ADJACENT ONE SURFACE OF THE BODY, WITH AN INSULATING COATING ON SAID SURFACE; FORMING A COMMUNICATING SLOT IN SAID COATING WHICH EXTENDS TO SAID SURFACE; FORMING A SEMICONDUCTOR LAYER OF SAID FIRST CONDUCTIVITY TYPE IN SAID SLOT WHICH CONTACTS SAID REGION; DIFFUSING IMPURITIES OF SAID ONE CONDUCTIVITY-TYPE INTO SAID SEMICONDUCTOR LAYER SO THAT SAID LAYER IS HIGHLY CONDUCTIVE WITH RESPECT TO SAID REGION; AND DIFFUSING A PLURALITY OF SEGMENTS OF A SECOND CONDUCTIVITY-TYPE INTO SAID REGION FROM SAID SURFACE IS SPACED RELATION TO SAID SEMICONDUCTOR LAYER.
Claim 2
Independent Claim
109 words
A METHOD FOR MAKING A SEMICONDUCTOR DEVICE, COMPRISING THE STEPS OF: PROVIDING A SEMICONDUCTOR BODY HAVING A REGION OF A FIRST CONDUCTIVITY-TYPE THEREIN ADJACENT ONE SURFACE OF THE BODY, WITH AN INSULATING COATING ON SAID SURFACE; FORMING A COMMUNICATING SLOT IN SAID COATING WHICH EXTENDS TO SAID SURFACE; FORMING A SEMICONDUCTOR LAYER OF SAID FIRST CONDUCTIVITY TYPE IN SAID SLOT WHICH CONTACTS SAID REGION; DIFFUSING IMPURITIES OF SAID ONE CONDUCTIVITY-TYPE INTO SAID SEMICONDUCTOR LAYER SO THAT SAID LAYER IS HIGHLY CONDUCTIVE WITH RESPECT TO SAID REGION; AND DIFFUSING A PLURALITY OF SEGMENTS OF A SECOND CONDUCTIVITY-TYPE INTO SAID REGION FROM SAID SURFACE IS SPACED RELATION TO SAID SEMICONDUCTOR LAYER.