Abstract 1. AN IMPROVED ELECTROSTATIC REPRODUCTION PROCESS, COMPRISING: PLACING A SHEET OF INSULATING TRANSFER MATERIAL HAVING A BULK RESISTIVITY IF AT LEAT 10**15 OHM-CM, BEARING AN ELECTROSTATIC CHARGE ON ONE SIDE THEREOF, ON A PHOTOCONDUCTIVE SURFACE TO FORM A TEMPORARY COMPOSITE, WITH SAID ONE SIDE IN CONTACT WITH SAIDE PHOTOCONDUCTIVE SURFACE, SAID PHOTOCONDUCTIVE SURFACE BEING OF THE N-P TYPE AND ELECTROSTATICALLY CARRGED TO THE SAME POLARITY AS SAID ONE SIDE OF AND TRANSFER SHET, BEFORE SAID TRANSFER SHEET IS PLACED THEREON,AT A POTENTIAL RELATIVE TO SAID TRANSFER SHEET INSUFFICIENTLY TO PERMIT CHARGE TRANSFER THEREBETWEEN, EXPOSING SAID PHOTOCONDUCITIVE SURFACE WITH SAID TRANSFER MATERIAL IN PLACE TO A LIGHT PATTERN, DEVELOPING SAID TRANSFER SHEET WHILE SAID TRANSFER SHEET IS IN PLACE ON SAID PHOTOCONDUCTIVE SURFACE TO FORM A FIRST VISIBLE IMAGE THEREON CORRESPONDING TO SAID LIGHT PATTERN, TRANSFERRING SAID FIRST VISIBLE IMAGE FROM SAID TRANSFER SHEET TO A RECEIVER SHEET, AND FIXING SAID FIRST VISIBLE IMAGE ON SAID RECEIVER SHEET.
AN IMPROVED ELECTROSTATIC REPRODUCTION PROCESS, COMPRISING: PLACING A SHEET OF INSULATING TRANSFER MATERIAL HAVING A BULK RESISTIVITY IF AT LEAT 10**15 OHM-CM, BEARING AN ELECTROSTATIC CHARGE ON ONE SIDE THEREOF, ON A PHOTOCONDUCTIVE SURFACE TO FORM A TEMPORARY COMPOSITE, WITH SAID ONE SIDE IN CONTACT WITH SAIDE PHOTOCONDUCTIVE SURFACE, SAID PHOTOCONDUCTIVE SURFACE BEING OF THE N-P TYPE AND ELECTROSTATICALLY CARRGED TO THE SAME POLARITY AS SAID ONE SIDE OF AND TRANSFER SHET, BEFORE SAID TRANSFER SHEET IS PLACED THEREON,AT A POTENTIAL RELATIVE TO SAID TRANSFER SHEET INSUFFICIENTLY TO PERMIT CHARGE TRANSFER THEREBETWEEN, EXPOSING SAID PHOTOCONDUCITIVE SURFACE WITH SAID TRANSFER MATERIAL IN PLACE TO A LIGHT PATTERN, DEVELOPING SAID TRANSFER SHEET WHILE SAID TRANSFER SHEET IS IN PLACE ON SAID PHOTOCONDUCTIVE SURFACE TO FORM A FIRST VISIBLE IMAGE THEREON CORRESPONDING TO SAID LIGHT PATTERN, TRANSFERRING SAID FIRST VISIBLE IMAGE FROM SAID TRANSFER SHEET TO A RECEIVER SHEET, AND FIXING SAID FIRST VISIBLE IMAGE ON SAID RECEIVER SHEET.
Claim 2
Dependent Claim
156 words
AN IMPROVED ELECTROSTATIC REPRODUCTION PROCESS, COMPRISING: PLACING A SHEET OF INSULATING TRANSFER MATERIAL HAVING A BULK RESISTIVITY IF AT LEAT 10**15 OHM-CM, BEARING AN ELECTROSTATIC CHARGE ON ONE SIDE THEREOF, ON A PHOTOCONDUCTIVE SURFACE TO FORM A TEMPORARY COMPOSITE, WITH SAID ONE SIDE IN CONTACT WITH SAIDE PHOTOCONDUCTIVE SURFACE, SAID PHOTOCONDUCTIVE SURFACE BEING OF THE N-P TYPE AND ELECTROSTATICALLY CARRGED TO THE SAME POLARITY AS SAID ONE SIDE OF AND TRANSFER SHET, BEFORE SAID TRANSFER SHEET IS PLACED THEREON,AT A POTENTIAL RELATIVE TO SAID TRANSFER SHEET INSUFFICIENTLY TO PERMIT CHARGE TRANSFER THEREBETWEEN, EXPOSING SAID PHOTOCONDUCITIVE SURFACE WITH SAID TRANSFER MATERIAL IN PLACE TO A LIGHT PATTERN, DEVELOPING SAID TRANSFER SHEET WHILE SAID TRANSFER SHEET IS IN PLACE ON SAID PHOTOCONDUCTIVE SURFACE TO FORM A FIRST VISIBLE IMAGE THEREON CORRESPONDING TO SAID LIGHT PATTERN, TRANSFERRING SAID FIRST VISIBLE IMAGE FROM SAID TRANSFER SHEET TO A RECEIVER SHEET, AND FIXING SAID FIRST VISIBLE IMAGE ON SAID RECEIVER SHEET.