Method and apparatus for electron beam alignment with a semiconductor member

Claim 3

A method of precision aligning an electron beam with selected areas of a major surface of a semiconductor member as set forth in claim 1 wherein: forming the detector mark includes providing a well in the member in the predetermined shape, and the cathodoluminescence generated is detected through the member.

Claim 4

A method of precision aligning an electron beam with selected areas of a major surface of a semiconductor member as set forth in claim 1 wherein: forming the detector mark includes providing a mesa on the member in the predetermined shape, and the cathodoluminescence generated is detected through the member.

Claim 5

A method of precision aligning an electron beam with selected areas of a major surface of a semiconductor member as set forth in claim 1 wherein: forming the detector mark includes positioning an opaque layer on the major surface of the semiconductor member in the predetermined shape.

Claim 6

A method of precision aligning an electron beam with selected areas of a major surface of the semiconductor member as set forth in claim 1 wherein: forming the detector mark includes positioning an opaque layer on the major surface of the semiconductor member to circumscribe an exposed portion of the major surface wherein the exposed portion is of the predetermined shape.

Claim 7

A method of precision aligning an electron beam with selected areas of a major surface of the semiconductor member as set forth in claim 1 wherein: a detector mark is of substantially the same predetermined shape as the predetermined cross-sectional shape of a corresponding alignment beam portion.

Claim 8

A method of precision aligning an electron beam with selected areas of a major surface of the semiconductor member as set forth in claim 1 wherein: the electron beam to be aligned is a scanning electron beam for selectively irradiating an electroresist layer on the major surface of the semiconductor member.

Claim 9

A method of precision aligning an electron beam with selected areas of a major surface of a semiconductor member as set forth in claim 7 wherein: the major surface of the member is divided into contiguous fields for selective irradiation, and the detector marks are positioned symmetrically along boundaries of said contiguous fields.

Claim 12

A method of precision aligning a patterned electron beam generated by a photocathode source with selected areas of a major surface of a semiconductor member as set forth in claim 9 wherein: forming each detector mark includes providing a well in the member in the predetermined shape, and the cathodoluminescence generated is detected through the member.

Claim 13

A method of precision aligning a patterned electron beam generated by a photocathode source with selected areas of a major surface of a semiconductor member as set forth in claim 9 wherein: forming each detector mark includes providing a mesa on the member in the predetermined shape, and the cathodoluminescence generated is detected through the member.

Claim 14

A method of precision aligning a patterned electron beam generated by a photocathode source with selected areas of a major surface of a semiconductor member as set forth in claim 9 wherein: forming each detector mark includes positioning an opaque layer on the major surface of the semiconductor member in the predetermined shape.

Claim 15

A method of precision aligning a patTerned electron beam generated by a photocathode source with selected areas of a major surface of a semiconductor member as set forth in claim 9 wherein: forming each detector mark includes positioning an opaque layer on the major surface of the semiconductor member to circumscribe an exposed portion of the major surface wherein the exposed portion is of the predetermined shape.

Claim 16

A method of precision aligning a patterned electron beam generated by a photocathode source with selected areas of a major surface of a semiconductor member as set forth in claim 9 wherein: each detector mark is of substantially the same predetermined shape as the predetermined cross-sectional shape of a corresponding alignment beam portion.

Claim 17

A method of precision aligning a patterned electron beam generated by a photocathode source with selected areas of a major surface of a semiconductor member as set forth in claim 9 wherein: steps D and E are automatically performed by electrically processing the electrical signal output corresponding to the detected cathodoluminescence on modulation of the movement of the alignment beam portions over the corresponding detector marks, and steps D and E automatically are terminated at optimum alignment of the corresponding alignment beam portions and detector marks.

Claim 18

Apparatus for selectively irradiating precisely located areas of a major surface of a semiconductor member comprising: A. a photocathode source for generating a patterned beam of electrons including at least one alignment beam portion of predetermined cross-sectional shape; B. a semiconductor member capable of generating cathodoluminescence of intensity corresponding to the thickness thereof and having adjacent a major surface thereof at least one detector mark corresponding to each said alignment beam portion, each said detector mark being of a predetermined shape and capable of providing a differential in cathodoluminescence generated by the member corresponding to the area of the mark irradiated by an electron beam; C. means for positioning the semiconductor member in a spaced relation to the photocathode source of the patterned beam; D. means for applying a potential between the semiconductor member and the photocathode source whereby electrons from the photocathode source are directed to and selectively irradiate portions of the major surface of the member; E. electromagnetic means for directing the patterned beam of electrons from the photocathode source to irradiate selected portions of the major surface of the member close to the precisely located areas and directing each alignment beam portion to irradiate selected portions of the surface portions of the major surface of the substrate close to a detector mark; F. detector means for detecting the cathodoluminescence generated by the member at least at and adjacent the detector marks and producing an electrical signal corresponding to the area of the detector mark irradiated by the alignment beam portions; and G. electrical means for moving the patterned beam of electrons relative to the member responsive to said electrical signal from the detector means to cause the alignment beam portions to substantially align with the respective detector marks, whereby the patterned beam of electrons from the photocathode is located and oriented relative to the semiconductor member so that precisely located areas of the major surface of the semiconductor member can be selectively irradiated with the patterned electron beam.

Claim 19

Apparatus for selectively irradiating precisely located areas of a major surface of a semiconductor member comprising: A. a photocathode source for generating a patterned beam of electrons including at least one alignment beam portion of predetermined cross-sectional shape; B. a semiconductor member capable of generating cathodoluminescence of intensity corresponding to the thickness thereof and having adjacent a major surface thereof at least one detector mark corresponding to each said alignment beam portion, each said detector mark being of a predetermined shape and capable of providing a differential in cathodoluminescence generated by the member corresponding to the area of the mark irradiated by an electron beam; C. means for positioning the semiconductor member in a spaced relation to the photocathode source of the patterned beam; D. means for applying a potential between the semiconductor member and the photocathode source whereby electrons from the photocathode source are directed to and selectively irradiate portions of the major surface of the member; E. electromagnetic means for directing the patterned beam of electrons from the photocathode source to irradiate selected portions of the major surface of the member close to the precisely located areas and directing each alignment beam portion to irradiate selected portions of the surface portions of the major surface of the substrate close to a detector mark; F. detector means for detecting the cathodoluminescence generated by the member at least at and adjacent the detector marks and producing an electrical signal corresponding to the area of the detector mark irradiated by the alignment beam portions; and G. electrical means for moving the patterned beam of electrons relative to the member responsive to said electrical signal from the detector means to cause the alignment beam portions to substantially align with the respective detector marks, whereby the patterned beam of electrons from the photocathode is located and oriented relative to the semiconductor member so that precisely located areas of the major surface of the semiconductor member can be selectively irradiated with the patterned electron beam.

Claim 20

Apparatus for selectively irradiating precisely located areas of a major surface of a semiconductor member as set forth in claim 16 wherein: the patterned beam of electrons generated by the photocathode source includes at least two spaced apart alignment beam portions having predetermined cross-sectional shapes substantially the same as the predetermined shapes of the corresponding detector marks.

Claim 21

Apparatus for selectively irradiAting precisely located areas of a major surface of a semiconductor substrate as set forth in claim 17 wherein: the electrical means includes modulation means for oscillating the movement of each alignment beam portion on a corresponding detector mark, phase detection means for detecting along orthogonal axis the error from alignment of the corresponding alignment beam portions and detector marks and outputting an electrical signal corresponding thereto, and actuating means for changing the electrical input to the electromagnetic means responsive to the electrical signal from the phase detector means to bring the alignement beam portions and the detector marks into alignment.