Method of making semiconductor devices through overlapping diffusions

Claim 2

IN THE ART OF MAKING DIFFUSIONS INTO A SEMICONDUCTIVE STRUCTURE OF THE TYPE WHEREIN A PLURALITY OF INDIVIDUAL DEVICE REGIONS OF A FIRST CONDUCTIVITY TYPE ARE SEPARATED FROM EACH OTHER BY REGIONS OF DIELECTRIC MATERIAL INTO WHICH CONDUCTIVITU TYPE DETERMINING IMPURITIES DO NOT PENETRATE, AND A REGION OF POLYCRYSTALLINE MATERIAL BEING POSITIONED BETWEEN PAIRS OF DIELECTRIC REGIONS, AND WHEREIN SURFACE PORTIONS OF EACH SUCH DEVICE REGIONS, DIELECTRIC REGIONS AND POLYCRYLSTALLINE REGIONS ARE EXPOSE AT THE MAJOR SURFACE OF THE SEMICONDUCTOR STRUCTURE, THE METHOD OF MAKING DIFFUSIONS SIMULTANEOUSLY INTO PORTIONS OF AT LEAST A PAIR OF ADJACENT DEVICE REGIONS, COMPRISING THE STEPS OF: FORMING A FIRST DIFFUSION MASK HAVING A FIRST OPENING EXPOSING PORTIONS OF AT LEAST A PAIR OF ADJACENT REGIONS AND THE INTERVENING DIELECTRIC MATERIAL AND POLYCRYSTALINE MATERIAL; AND DIFFUSING A DOPANT MATERIAL THROUGH SAID OPENING FOR ALTERING SAID FIRST CONDUCTIVITY TYPE AND SIMULTANEOUSLY FORMING IN PORTIONS OF SUCH PAIR OF ADJACENT DEVICE REGIONS A CORRESPONDING PAIR OF ADDITIONAL AND DIFFERENT CONDUCTIVITY TYPE REGIONS.

Claim 3

In the art of making diffusions into a semiconductive structure of the type wherein a plurality of individual device regions of a first conductivity type are separated from each other by a region of dielectric material into which conductivity type determining impurities will not penetrate and the dielectric region being coplanar with the surface of the semiconductor structure and extending from the major surface of the semiconductor surface to a depth greater than any subsequent diffusion extends, and wherein surface portions of each such device region are exposed at the major surface of the semiconductor structure, the method of making diffusions simultaneously into portions of at least a pair of adjacent regions, comprising the steps of: forming a first diffusion mask having a first opening exposing portions of at least a pair of adjacent regions and the intervening dielectric material; and diffusing a dopant material through said opening for altering said first conductivity type and simultaneously forming in portions of such pair of adjacent regions a corresponding pair of additional and different conductivity type regions.

Claim 4

In the art of making diffusions into a semiconductive structure of the type wherein a plurality of individual device regions of a first conductivity type are separated from each other by a region of dielectric material into which conductivity type determining impurities will not penetrate and the dielectric region being coplanar with the surface of the semiconductor structure and extending from the major surface of the semiconductor surface to a depth greater than any subsequent diffusion extends, and wherein surface portions of each such device region are exposed at the major surface of the semiconductor structure, the method of making diffusions simultaneously into portions of at least a pair of adjacent regions, comprising the steps of: forming a first diffusion mask having a first opening exposing portions of at least a pair of adjacent regions and the intervening dielectric material; and diffusing a dopant material through said opening for altering said first conductivity type and simultaneously forming in portions of such pair of adjacent regions a corresponding pair of additional and different conductivity type regions.

Claim 5

In the art of making diffusions into a semiconductive structure of the type wherein an individual active device region is separated from a non-device region by a region of dielectric material into which conductivity type determining impurities do not penetrate, and the dielectric region extends from the major surface of the semiconductor structure to a depth greater than any subsequent diffusion extends, and wherein a surface portion of such active device region is exposed at the major surface of the semiconductor structure, the method of making diffusions simultaneously into a portion of an active device region and into a portion of the non-device region, comprising the steps of: forming a first diffusion mask having a first opening exposing a portion of the active device region and a portion of the non-device region and the intervening region of dielectric material; and diffusing a dopant material through said opening for altering said first conductivity type of said active device region and simultaneously forming a doped region in said non-device region.

Claim 6

In the art of making diffusions into a semiconductive structure of the type wherein an individual active device region is separated from a non-device region by a region of dielectric material into which conductivity type determining impurities do not penetrate, and the dielectric region extends from the major surface of the semiconductor structure to a depth greater than any subsequent diffusion extends, and wherein a surface portion of such active device region is exposed at the major surface of the semiconductor structure, the method of making diffusions simultaneously into a portion of an active device region and into a portion of the non-device region, comprising the steps of: forming a first diffusion mask having a first opening exposing a portion of the active device region and a portion of the non-device region and the intervening region of dielectric material; and diffusing a dopant material through said opening for altering said first conductivity type of said active device region and simultaneously forming a doped region in said non-device region.

Claim 7

The method as recited in claim 3 and further including the steps of: forming a second diffusion mask having a second opening exposing a smaller portion of the active device region into which said last diffusion was made and exposing a portion of the non-device region and the intervening region of dielectric material; and diffusing an opposite conductivity type dopant through said opening for establishing simultaneously a region of opposite conductivity type within said active device region and said non-device region whereby, multiple diffusions into said non-device region do not affect the characteristic of the active device region due to the isolating effect of the dielectric region.

Claim 8

In the art of making diffusions into a semiconductive structure of the type containing a plurality of individual active device regions, and each of said regions having positioned adjacent thereto a region of dielectric material into which conductivity type determining impurities do not penetrate, and the dielectric region extends from the major surface of the semiconductor structure to a depth greater than any subsequent diffusion extends, and a region of polycrystalline material is positioned intermediate said regions of dielectric material, and wherein surface portions of each such device region are exposed at the major surface of the semiconductor structure, the method of making diffusions simultaneously into only a portion of an active device region, comprising the steps of: forming a first diffusion mask having a first opening exposing a portion of the active device region and a portion of the polycrystalline material and the intervening dielectric material; and diffusing a dopant material through said opening for altering the conductivity type of said active device region and simultaneously forming a doped region in said portion of said polycrystalline region exposed through said opening.

Claim 9

In the art of making diffusions into a semiconductive structure of the type containing a plurality of individual active device regions, and each of said regions having positioned adjacent thereto a region of dielectric material into which conductivity type determining impurities do not penetrate, and the dielectric region extends from the major surface of the semiconductor structure to a depth greater than any subsequent diffusion extends, and a region of polycrystalline material is positioned intermediate said regions of dielectric material, and wherein surface portions of each such device region are exposed at the major surface of the semiconductor structure, the method of making diffusions simultaneously into only a portion of an active device region, comprising the steps of: forming a first diffusion mask having a first opening exposing a portion of the active device region and a portion of the polycrystalline material and the intervening dielectric material; and diffusing a dopant material through said opening for altering the conductivity type of said active device region and simultaneously forming a doped region in said portion of said polycrystalline region exposed through said opening.

Claim 10

The method as recited in claim 5 and further including the steps of: forming a second diffusion mask having a second opening exposing a smaller portion of the active device region into which said last diffusion was made, and exposing the intervening region of dielectric material and a portion of the polycrystalline region; and diffusing an opposite conductivity type dopant through said opening for establishing simultaneously a region of opposite conductivity type within said active device region and the polycrystalline region whereby, multiple diffusions into said polycrystalline region do not affect the characteristics of the active device region due to the isolating effect of the dielectric region.