US3838276A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Phototransistor array having reduced crosstalk
Assignee: Westinghouse Electric Corp
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Filing: 1973-06-29
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Granted: 1974-09-24
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Expires: 1993-06-29
Abstract
Abstract A phototransistor array having an improved modulation transfer function (i.e., sensitivity) and reduced crosstalk over prior art devices of this type. This is accomplished by connecting one element of each transistor, usually the emitter, to metalizations which extend between base regions in rows of phototransistors in the array, the metalizations being connected to the emitter regions through stub sections which cover and block a minimal portion of the base regions which are exposed to light. This improves the modulation transfer function or sensitivity of the array. At the same time, since the metallizations extending along the rows of phototransistors cover and block light from the spaces between base regions, crosstalk is reduced.
Inventors
- 👤 W Mend
- 👤 R Treude
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:52
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197; H10F99/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
145 words
In a solid state electron optics device, the combination of a plurality of phototransistors on a common sEmiconductive substrate and onto which an optical image is focused, said transistors being formed by parallel columns in the substrate of one type conductivity which constitute one region of the respective phototransistors, said parallel columns being completely insulated from each other by isolation areas, discrete spaced base regions of the other type conductivity formed in said parallel columns, regions of said one type conductivity formed in said base regions and constituting the remaining region of each phototransistor, and metalizations interconnecting said lastnamed regions in rows which are at essentially right angles to said columns, each of said metalizations comprising a strip of metalized electrically conductive material in the spaces between adjacent base regions and having stub portions which extend over the base regions and contact said remaining regions.
Claim 2
Dependent Claim
145 words
In a solid state electron optics device, the combination of a plurality of phototransistors on a common sEmiconductive substrate and onto which an optical image is focused, said transistors being formed by parallel columns in the substrate of one type conductivity which constitute one region of the respective phototransistors, said parallel columns being completely insulated from each other by isolation areas, discrete spaced base regions of the other type conductivity formed in said parallel columns, regions of said one type conductivity formed in said base regions and constituting the remaining region of each phototransistor, and metalizations interconnecting said lastnamed regions in rows which are at essentially right angles to said columns, each of said metalizations comprising a strip of metalized electrically conductive material in the spaces between adjacent base regions and having stub portions which extend over the base regions and contact said remaining regions.
Claim 3
Dependent Claim
23 words
The electron optics device of claim 1 wherein said one regions comprises the collector regions and said other regions comprises the emitter region.
Claim 4
Dependent Claim
28 words
The electron optics device of claim 2 wherein said emitter regions are offset with respect to said base regions so as to be closer to said stub portions.
Claim 5
Dependent Claim
20 words
The electron optics device of claim 1 wherein said stub portions contact said other regions only at the edges thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-09-23 | 1978-03-25 | 1978-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-09-23 | 1982-03-25 | 1982-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-09-23 | 1986-03-25 | 1986-09-24 | $7700.00 | Window Closed / Lapsed |